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专利名称:【中文】一种钨基扩散阴极的增材制造制备方法 【EN】Additive manufacturing method of tungsten-based diffusion cathode

专利申请号202010006398.5
申请日2020.01.03
公开(公告)号CN111036914A
公开(公告)日2020.04.21
主分类号B22F3/11
分案原申请号
分类号B22F5/10 B22F3/11 B22F1/00 B22F3/24 B33Y10/00
优先权
申请(专利权)人【中文】北京工业大学【EN】Beijing University of Technology
地址【中文】100124 北京市朝阳区平乐园100号【EN】100124 Chaoyang District, Beijing Ping Park, No. 100
发明(设计)人【中文】王金淑;骆凯捷;杨韵斐;周帆;梁轩铭;刘伟;陈树群【EN】Wang Jinshu;Luo Kaijie;Yang Yunfei;Zhou Fan;Liang Xuanming;Liu Wei;Chen Shuqun
国际申请
国际公布
进入国家阶段日期
专利代理机构【中文】北京思海天达知识产权代理有限公司 11203【EN】Beijing Sihai Tianda Intellectual Property Agency Co., Ltd.
代理人【中文】张立改【EN】Zhang Ligai
专利类型发明专利
摘要【中文】一种钨基扩散阴极的增材制造制备方法,属于热阴极电子发射材料的制备技术领域,采用可三维立体成型的激光选区熔化(SLM)技术制备了阴极多孔钨基,并对激光能量与多孔钨基致密度的关系进行了研究。研究结果表明采用激光功率P=160W,扫描速度V=1600mm/s,扫描间距D=0.10mm的制备工艺能够获得相对密度为65.7%的阴极基体,且能够满足阴极后续制备加工的需求,其活性盐浸渍量达13%。对该阴极发射性能进行测试,结果显示该阴极发射性能能够达到传统钡钨阴极材料的发射性能。 【EN】A material increase manufacturing method of a tungsten-based diffusion cathode belongs to the technical field of preparation of hot cathode electron emission materials, a cathode porous tungsten base is prepared by adopting a Selective Laser Melting (SLM) technology capable of three-dimensional forming, and the relation between laser energy and the density of the porous tungsten base is researched. The research result shows that the cathode matrix with the relative density of 65.7 percent can be obtained by adopting the preparation process with the laser power P of 160W, the scanning speed V of 1600mm/s and the scanning distance D of 0.10mm, the requirements of subsequent preparation and processing of the cathode can be met, and the impregnation amount of the active salt reaches 13 percent. The emission performance of the cathode is tested, and the result shows that the emission performance of the cathode can reach the emission performance of the traditional barium-tungsten cathode material.
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