摘要：【中文】本发明提供了一种三端半导体器件及其制作方法，涉及半导体器件技术领域。所述三端半导体器件包括支撑层、设置在所述支撑层上的异质结、设置在所述异质结上的第一电极、第二电极和栅极；其中，所述第一电极和所述第二电极中至少一个包括：设置在所述异质结上的掺杂层和设置在所述掺杂层上的电极接触层。三端半导体器件能够降低接触电阻、减少器件开关损耗、且不会导致器件提前被击穿。 【EN】The invention provides a three-terminal semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductor devices. The three-terminal semiconductor device comprises a supporting layer, a heterojunction arranged on the supporting layer, a first electrode, a second electrode and a grid electrode, wherein the first electrode, the second electrode and the grid electrode are arranged on the heterojunction; wherein at least one of the first electrode and the second electrode comprises: a doped layer disposed on the heterojunction and an electrode contact layer disposed on the doped layer. The three-terminal semiconductor device can reduce contact resistance, reduce switching loss of the device and cannot cause the device to be broken down in advance.

摘要：【中文】本发明公开了一种垂直结构光电器件及其制备方法，半导体器件制备技术领域，能够解决现有技术的垂直结构光电器件采用短波长激光器进行剥离，存在无法剥离或剥离良率低的问题。制备方法包括在蓝宝石衬底上外延设置光吸收层，光吸收层的吸收波长大于高铝组分氮化物材料的吸收波长；在光吸收层上依次生长高铝组分氮化物材料外延层以及光电器件外延结构，制作形成光电器件芯片结构；在光电器件芯片结构远离光吸收层的一侧固定二次衬底；剥离蓝宝石衬底并去除非电极接触层，形成垂直结构光电器件，其中，非电极接触层包括光吸收层和高铝组分氮化物材料外延层。 【EN】The invention discloses a vertical structure photoelectric device and a preparation method thereof, belongs to the technical field of semiconductor device preparation, and can solve the problems that the vertical structure photoelectric device in the prior art cannot be stripped or the stripping yield is low due to the fact that a short wavelength laser is adopted for stripping. The preparation method comprises the steps of epitaxially arranging a light absorption layer on a sapphire substrate, wherein the absorption wavelength of the light absorption layer is greater than that of the high-aluminum component nitride material; sequentially growing a high-aluminum-component nitride material epitaxial layer and a photoelectric device epitaxial structure on the light absorption layer to manufacture and form a photoelectric device chip structure; fixing a secondary substrate on one side of the photoelectric device chip structure far away from the light absorption layer; and stripping the sapphire substrate and removing the non-electrode contact layer to form the vertical-structure photoelectric device, wherein the non-electrode contact layer comprises a light absorption layer and a high-aluminum-component nitride material epitaxial layer.

摘要：【中文】本发明提供一种反应腔预处理方法及氮化铝外延层制备方法，属于晶体生长技术领域。反应腔预处理方法包括升高反应腔内温度至预设值；向反应腔通入含有氮源、镓源以及铝源的混合气体，以在反应腔盖体上沉积铝镓氮层。本发明的目的在于提供一种反应腔预处理方法及氮化铝外延层制备方法，能够在进行常规的氮化铝外延层制备之前对反应腔进行预处理，以便于对附着在反应腔盖体上的氮化铝进行高效清理。 【EN】The invention provides a reaction cavity pretreatment method and an aluminum nitride epitaxial layer preparation method, and belongs to the technical field of crystal growth. The pretreatment method of the reaction chamber comprises the steps of raising the temperature in the reaction chamber to a preset value; and introducing mixed gas containing a nitrogen source, a gallium source and an aluminum source into the reaction cavity so as to deposit an aluminum gallium nitrogen layer on the cover body of the reaction cavity. The invention aims to provide a reaction cavity pretreatment method and an aluminum nitride epitaxial layer preparation method, which can be used for pretreating a reaction cavity before conventional aluminum nitride epitaxial layer preparation so as to effectively clean aluminum nitride attached to a reaction cavity cover body.

摘要：【中文】本发明提供了一种均匀出光装置和LED匀光灯具，涉及灯具领域，该均匀出光装置包括匀光器、光源和安装基板，匀光器内设置有光学腔，且匀光器具有一出光面，出光面上开设有与光学腔连通的出光口，安装基板与出光面连接并部分遮挡出光口，光源设置在安装基板遮挡出光口且靠近匀光器的表面，光学腔内设置有光学面，光学面用于反射光源发出的光，并由出光口射出。相较于现有技术，本发明提供的均匀出光装置，适用于大功率光源，能够通过光学腔内的光学面反射出光，从而能够实现均匀出光，提升了出光质量。 【EN】The invention provides a uniform light emitting device and an LED light homogenizing lamp, and relates to the field of lamps. Compared with the prior art, the uniform light emitting device provided by the invention is suitable for a high-power light source, and can reflect light through the optical surface in the optical cavity, so that uniform light emitting can be realized, and the light emitting quality is improved.

摘要：【中文】本发明提供了一种维持反应腔良性环境的方法，涉及外延生长的技术领域。维持反应腔良性环境的方法包括：将完成AlN膜外延生长的生长设备的反应腔加热到预设温度；向所述反应腔通入清洁气体，清除所述反应腔内的杂质颗粒；将所述反应腔保持在所述预设温度，并通入NH₃和镓源、且维持预设时长，以在所述反应腔的内壁上沉积GaN覆盖层；清扫所述反应腔的内壁。维持反应腔良性环境的方法能够保证AlN的结晶质量，提高AlN外延制备的效率。 【EN】The invention provides a method for maintaining a benign environment of a reaction chamber, and relates to the technical field of epitaxial growth. The method for maintaining a benign environment of a reaction chamber comprises the following steps: heating a reaction cavity of growth equipment for finishing the epitaxial growth of the AlN film to a preset temperature; introducing clean gas into the reaction cavity, and removing impurity particles in the reaction cavity; keeping the reaction cavity at the preset temperature, and introducing NH₃And a gallium source, and maintaining for a preset time length to deposit a GaN covering layer on the inner wall of the reaction chamber; and cleaning the inner wall of the reaction cavity. The method for maintaining the benign environment of the reaction cavity can ensure the crystallization quality of AlN and improve the efficiency of AlN epitaxial preparation.

摘要：【中文】本发明提供了一种采用MOCVD技术的近紫外LED及其制备方法，涉及半导体技术领域。近紫外LED包括衬底和在所述衬底上依次生长的缓冲层、高温层、n型Al_mGa_1－mN层、发光有源区、p型电子阻挡层、p型Al_nGa_1－nN层和接触层，其中，所述发光有源区的材料包括In_xGa_1－xN和Al_yGa_1－yN，所述p型电子阻挡层的材料包括Al_y1In_x1Ga_1－y1－x1N，0.001≤x＜y≤1，y，m，n均小于y1。近紫外LED能有效地增加电子限制效果和空穴注入效率，从而提高器件的量子效率和发光效率。 【EN】The invention provides a near ultraviolet LED (light emitting diode) adopting an MOCVD (metal organic chemical vapor deposition) technology and a preparation method thereof, and relates to the technical field of semiconductors. The near ultraviolet LED comprises a substrate, and a buffer layer, a high temperature layer and n-type Al which are sequentially grown on the substrate_mGa_1－mN layer, light emitting active region, p-type electron blocking layer, and p-type Al_nGa_1－nAn N layer and a contact layer, wherein the material of the light emitting active region comprises In_xGa_1－xN and Al_yGa_1－yN, the material of the p-type electron blocking layer comprises Al_y1In_x1Ga_1－y1－x1N，X is more than or equal to 0.001 and less than or equal to y and less than or equal to 1, and y, m and n are all less than y 1. The near ultraviolet LED can effectively increase the electron limiting effect and the hole injection efficiency, thereby improving the quantum efficiency and the luminous efficiency of the device.

摘要：【中文】本发明提供了一种采用复合电子阻挡层的紫外发光器件及其制备方法，涉及半导体技术领域。所述紫外发光器件包括衬底和在所述衬底上依次生长的低温缓冲层、高温层、n型Al_mGa_1‑mN层、发光有源区、p型复合电子阻挡层、p型Al_nGa_1‑nN层和接触层；其中，所述p型复合电子阻挡层包括沿生长方向依次形成的p型L1层和p型L2层。紫外发光器件能够有效地增加电子限制效果、增强空穴注入效率，以及载流子注入时的电流扩展能力，从而提高紫外发光器件的在量子阱中的辐射复合速率，改善器件的发光效率。 【EN】The invention provides an ultraviolet light-emitting device adopting a composite electron blocking layer and a preparation method thereof, relating to the technical field of semiconductors. The ultraviolet light-emitting device comprises a substrate, and a low-temperature buffer layer, a high-temperature layer and n-type Al which are sequentially grown on the substrate_mGa_1‑mN layer, light-emitting active region, p-type composite electron blocking layer and p-type Al_nGa_1‑nAn N layer and a contact layer; wherein the p-type composite electron blocking layer comprises a p-type L1 layer and a p-type L2 layer which are sequentially formed along the growth direction. The ultraviolet light-emitting device can effectively increase the electron limiting effect, enhance the hole injection efficiency and the current expansion capability during the carrier injection, thereby improving the radiation recombination rate of the ultraviolet light-emitting device in a quantum well and improving the light-emitting efficiency of the device.

摘要：【中文】本申请提供了一种芯片制备方法与待剥离芯片结构，涉及半导体技术领域。首先提供一衬底，然后沿衬底制作掩膜层，其中，掩膜层包括凹陷区，凹陷区的底部露出衬底的表面，且凹陷区的底部宽度小于顶部宽度，再沿凹陷区内衬底的表面依次生长缓冲层、模板层以及芯片本体，最后腐蚀掩膜层与模板层，以获取目标芯片，其中，所述目标芯片包括芯片本体。本申请提供了一种芯片制备方法与待剥离芯片结构具有剥离芯片本体更加方便，且不会造成外延面积的浪费的优点。 【EN】The application provides a chip preparation method and a chip structure to be stripped, and relates to the technical field of semiconductors. Firstly, providing a substrate, then manufacturing a mask layer along the substrate, wherein the mask layer comprises a concave area, the bottom of the concave area is exposed out of the surface of the substrate, the width of the bottom of the concave area is smaller than that of the top of the concave area, then growing a buffer layer, a template layer and a chip body along the surface of the substrate in the concave area in sequence, and finally corroding the mask layer and the template layer to obtain a target chip, wherein the target chip comprises a chip body. The application provides a chip preparation method and a chip structure to be peeled, which have the advantages that the chip body is more convenient to peel, and the waste of the epitaxial area is avoided.

摘要：【中文】本申请提供了一种发光二极管及其制备方法，涉及发光二极管领域。该发光二极管包括逐层连接的衬底、缓冲层、n型半导体层、Al_xGa_1‑xN/Al_yGa_1‑yN发光有源区、最后一个AlGaN量子垒层、p型AlGaN电子阻挡层、p型AlGaN层以及接触层，且0.01≤x<y≤1；发光有源区中的第一个AlGaN量子垒层与n型半导体层连接，发光有源区中的最后一个量子阱层与最后一个AlGaN量子垒层俩连接，且n型半导体层中最低的铝组分数值大于第一个AlGaN量子垒层中最高的铝组分数值。本申请提供的发光二极管及其制备方法具有能够提升发光有源区内的复合效率的优点。 【EN】The application provides a light-emitting diode and a preparation method thereof, and relates to the field of light-emitting diodes. The LED comprises a substrate, a buffer layer, an n-type semiconductor layer, and Al connected layer by layer_xGa_1‑xN/Al_yGa_1‑yAn N light-emitting active region, a last AlGaN quantum barrier layer, a p-type AlGaN electron barrier layer, a p-type AlGaN layer and a contact layer, wherein x is more than or equal to 0.01<y is less than or equal to 1; the first AlGaN quantum barrier layer in the light-emitting active region is connected with the n-type semiconductor layer, the last quantum well layer in the light-emitting active region is connected with the last AlGaN quantum barrier layer, and the lowest aluminum component value in the n-type semiconductor layer is larger than the highest aluminum component value in the first AlGaN quantum barrier layer. The light-emitting diode and the preparation method thereof have the advantage of improving the recombination efficiency in the light-emitting active region.

摘要：【中文】本发明提供了一种锁相环电路，通过自校准电荷泵根据up脉冲或dn脉冲对环路滤波器进行充电或放电，调节环路滤波器输出的控制电压；自校准电荷泵根据up脉冲或dn脉冲泵入或泵出的电流相同，利用自校准电荷泵改进了传统电荷泵的电流失配问题，实现电荷泵UP电流和DN电流的匹配，从而减少模拟锁相环锁定时出现的静态相位差和电流失配导致的输出抖动增大问题。 【EN】The invention provides a phase-locked loop circuit, which charges or discharges a loop filter according to up pulses or dn pulses through a self-calibration charge pump and adjusts control voltage output by the loop filter; the self-calibration charge pump has the advantages that currents pumped in or out by the self-calibration charge pump according to the UP pulse or the DN pulse are the same, the current mismatch problem of the traditional charge pump is improved by the self-calibration charge pump, the UP current and the DN current of the charge pump are matched, and therefore the problem of output jitter increase caused by static phase difference and current mismatch when the analog phase-locked loop is locked is solved.