摘要：【中文】本发明公开了一种ESD防护结构、制备方法及显示装置。本发明通过将ESD防护结构与待保护线路及显示器外围电路连接，其中，ESD防护结构的衬底、第一半导体层、栅极绝缘层及导电栅极层依次层叠设置；第一半导体层包括源漏极区域及沟道区域；中间介电层设置于导电栅极层远离栅极绝缘层的一侧；第二半导体层依次穿过中间介电层及栅极绝缘层与源漏极区域连接，形成第一二极管及第二二极管；第一半导体层、栅极绝缘层、导电栅极层形成第一晶体管和第二晶体管，较现有技术中四个晶体管的ESD防护结构体积要小，并且可以起到静电放电防护的作用，更利于窄边框显示器的设计。 【EN】The invention discloses an ESD protection structure, a preparation method and a display device. The ESD protection structure is connected with a circuit to be protected and a peripheral circuit of a display, wherein a substrate, a first semiconductor layer, a grid electrode insulating layer and a conductive grid electrode layer of the ESD protection structure are sequentially stacked; the first semiconductor layer comprises a source drain region and a channel region; the intermediate dielectric layer is arranged on one side of the conductive grid layer far away from the grid insulating layer; the second semiconductor layer sequentially penetrates through the middle dielectric layer and the grid electrode insulating layer to be connected with the source drain electrode region to form a first diode and a second diode; the first semiconductor layer, the grid insulating layer and the conductive grid layer form a first transistor and a second transistor, and compared with an ESD protection structure of four transistors in the prior art, the ESD protection structure is small in size, can play a role in electrostatic discharge protection, and is more beneficial to the design of a narrow-frame display.

摘要：【中文】本发明涉及一种氧化物半导体薄膜及其制备方法、薄膜晶体管的制备方法。该制备方法包括以下步骤：提供氧化物半导体的前驱体溶液；将氧化物半导体的前驱体溶液置于保护气体环境中，对氧化物半导体的前驱体溶液进行紫外光光照处理，反应完全后，得到氧化物半导体溶胶；将氧化物半导体溶胶在衬底上成膜和热处理，即得氧化物半导体薄膜。该制备方法采用紫外光对氧化物半导体的前驱体溶液进行光照处理，氧化物半导体的前驱体吸收紫外光后，加速水解反应和缩聚反应，获得良好的氧化物半导体溶胶，再经过成膜和热处理，氧化物半导体薄膜由疏松多孔的结构转变为致密的结构，进而实现高性能氧化物半导体薄膜的制备。 【EN】The invention relates to an oxide semiconductor thin film, a preparation method thereof and a preparation method of a thin film transistor. The preparation method comprises the following steps: providing a precursor solution of an oxide semiconductor; placing the precursor solution of the oxide semiconductor in a protective gas environment, carrying out ultraviolet light illumination treatment on the precursor solution of the oxide semiconductor, and obtaining oxide semiconductor sol after complete reaction; and forming a film on the substrate by using the oxide semiconductor sol and carrying out heat treatment to obtain the oxide semiconductor film. The preparation method adopts ultraviolet light to carry out illumination treatment on a precursor solution of the oxide semiconductor, after the precursor of the oxide semiconductor absorbs the ultraviolet light, the hydrolysis reaction and the polycondensation reaction are accelerated to obtain good oxide semiconductor sol, and the oxide semiconductor film is changed from a loose and porous structure to a compact structure through film forming and heat treatment, so that the preparation of the high-performance oxide semiconductor film is realized.

摘要：【中文】本发明涉及一种薄膜封装方法及由其制备而成的薄膜封装结构，该薄膜封装方法包括以下步骤：在待封装的器件上形成第一无机阻隔层；将有机硅高分子前体沉积在第一无机阻隔层上，并进行固化，形成有机平坦化层；将有机平坦化层置于真空紫外下，使有机平坦化层的表面进行分解反应，以在有机平坦化层的表面上形成第二无机阻隔层。上述薄膜封装方法有效地减少了薄膜封装所需的工序和设备数量，从而提高了生产效率，降低了显示面板的制造成本。 【EN】The invention relates to a film packaging method and a film packaging structure prepared by the same, wherein the film packaging method comprises the following steps: forming a first inorganic barrier layer on a device to be encapsulated; depositing an organic silicon polymer precursor on the first inorganic barrier layer, and curing to form an organic planarization layer; and placing the organic planarization layer under vacuum ultraviolet to perform decomposition reaction on the surface of the organic planarization layer so as to form a second inorganic barrier layer on the surface of the organic planarization layer. The film packaging method effectively reduces the number of processes and equipment required by film packaging, thereby improving the production efficiency and reducing the manufacturing cost of the display panel.

摘要：【中文】本发明涉及一种显示器件及其制备方法、显示装置，该显示器件，包括：基板、像素定义层、发光单元和薄膜封装结构；像素定义层位于基板上，并限定出像素区和非像素区，发光单元设置在像素区；薄膜封装结构位于基板上并覆盖像素定义层和发光单元；薄膜封装结构包括多层层叠设置的无机封装层和设置在相邻两层无机封装层之间的有机封装层，至少一层有机封装层的远离像素定义层的表面设置有凸起结构，有机封装层上的凸起结构设置于非像素区内。上述显示器件具有较高的弯曲性能。 【EN】The invention relates to a display device, a preparation method thereof and a display device, wherein the display device comprises: the display device comprises a substrate, a pixel defining layer, a light emitting unit and a thin film packaging structure; the pixel definition layer is positioned on the substrate and defines a pixel area and a non-pixel area, and the light-emitting unit is arranged in the pixel area; the thin film packaging structure is positioned on the substrate and covers the pixel defining layer and the light emitting unit; the film packaging structure comprises a plurality of inorganic packaging layers which are stacked and an organic packaging layer which is arranged between two adjacent inorganic packaging layers, wherein a protruding structure is arranged on the surface, far away from the pixel definition layer, of at least one organic packaging layer, and the protruding structure on the organic packaging layer is arranged in a non-pixel area. The display device has high bending performance.

摘要：【中文】本发明涉及一种发光器件及其制备方法、薄膜封装结构和显示面板，发光器件包括基板、像素限定层、发光单元、气体疏散层和封装层，所述像素限定层设于所述基板上，且所述像素限定层设有像素坑，所述发光单元设于所述像素坑内，所述气体疏散层设于所述像素限定层上且位于所述像素限定层未设有所述像素坑的区域，所述封装层设于所述像素限定层上且覆盖所述气体疏散层和所述发光单元。如此，能够将透过封装层的水汽吸收分散到气体疏散层的区域中，缓解水汽对内部结构的影响，避免水汽影响发光器件的正常工作，延长了显示面板的使用寿命。 【EN】The invention relates to a light-emitting device and a preparation method thereof, a thin film packaging structure and a display panel, wherein the light-emitting device comprises a substrate, a pixel limiting layer, a light-emitting unit, a gas evacuation layer and a packaging layer, the pixel limiting layer is arranged on the substrate and provided with a pixel pit, the light-emitting unit is arranged in the pixel pit, the gas evacuation layer is arranged on the pixel limiting layer and is positioned in a region where the pixel limiting layer is not provided with the pixel pit, and the packaging layer is arranged on the pixel limiting layer and covers the gas evacuation layer and the light-emitting unit. Therefore, the water vapor penetrating through the packaging layer can be absorbed and dispersed in the region of the gas evacuation layer, the influence of the water vapor on the internal structure is relieved, the water vapor is prevented from influencing the normal work of the light-emitting device, and the service life of the display panel is prolonged.

摘要：【中文】本发明涉及一种墨水及其制备方法，包括空穴注入材料和主溶剂；所述空穴注入材料选自HAT‑CN、F4‑TCNQ和F6‑TCNNQ中的一种或几种；所述主溶剂选自N,N‑二甲基乙酰胺、N,N‑二甲基甲酰胺、N,N甲基吡咯烷酮、环己酮、环丁砜、1,4二氧六环和二甲基亚砜中的一种或几种。上述主溶剂对空穴注入材料HAT‑CN，F4TCNQ，F6TCNNQ有良好的溶解性，成功地将用于蒸镀的空穴注入材料用于溶液加工中。该墨水具有良好的成膜性，且成膜后，并不会被后续的发光层或者空穴传输层的墨水的溶剂溶解，有良好的成膜稳定性。 【EN】The invention relates to ink and a preparation method thereof, comprising a hole injection material and a main solvent; the hole injection material is selected from one or more of HAT-CN, F4-TCNQ and F6-TCNNQ; the main solvent is one or more selected from N, N-dimethylacetamide, N-dimethylformamide, N-methylpyrrolidone, cyclohexanone, sulfolane, 1,4 dioxane and dimethyl sulfoxide. The above-mentioned main solvent has good solubility for the hole injection materials HAT-CN, F4TCNQ, F6TCNNQ, and the hole injection material for vapor deposition is successfully used in solution processing. The ink has good film forming property, can not be dissolved by the solvent of the ink of a subsequent light-emitting layer or a hole transport layer after film forming, and has good film forming stability.

摘要：【中文】本发明涉及金属氧化物薄膜图案化的方法及应用。所述金属氧化物薄膜图案化的方法，包括以下步骤：提供混合溶液，所述混合溶液包括金属氧化物前驱体和β二酮类化合物；提供衬底，在所述衬底表面沉积所述混合溶液，进行紫外光照射处理或O₂等离子体处理，形成中间图案化薄膜层；对所述中间图案化薄膜层进行退火处理，得到金属氧化物薄膜层。上述金属氧化物薄膜图案化的方法，无需使用光刻胶等化学毒性大的物质，安全环保，节省工艺制程。 【EN】the invention relates to a method for patterning a metal oxide film and application thereof₂Plasma processing to form an intermediate patterned thin film layer; and annealing the middle patterned thin film layer to obtain the metal oxide thin film layer. The method for patterning the metal oxide film does not need substances with high chemical toxicity, such as photoresist and the like, is safe and environment-friendly, and saves the process.

摘要：【中文】本发明涉及一种封装结构及其制备方法和显示面板，其中，封装结构用于封装发光器件，发光器件包括用于设置发光单元的像素区和围绕像素区的非像素区，封装结构包括：层叠设置的第一无机阻隔层、缓冲层和第二无机阻隔层；其中，缓冲层包括多个有机缓冲单元，各有机缓冲单元设置在像素区，且对应一发光单元独立设置。上述显示封装结构能够使每个子像素有独立的缓冲结构，可以防止水、氧等扩散至相邻子像素，进而防止失效区扩大，提高封装效果以及面板长期使用稳定性。 【EN】The invention relates to a packaging structure, a preparation method thereof and a display panel, wherein the packaging structure is used for packaging a light-emitting device, the light-emitting device comprises a pixel area for arranging a light-emitting unit and a non-pixel area surrounding the pixel area, and the packaging structure comprises: the buffer layer is arranged on the first inorganic barrier layer; the buffer layer comprises a plurality of organic buffer units, and each organic buffer unit is arranged in the pixel region and independently arranged corresponding to one light-emitting unit. The display packaging structure can enable each sub-pixel to have an independent buffer structure, can prevent water, oxygen and the like from diffusing to adjacent sub-pixels, further prevents a failure area from being enlarged, and improves the packaging effect and the long-term use stability of the panel.

摘要：【中文】本发明涉及一种顶发射垂直发光晶体管及其制备方法和应用，该顶发射垂直发光晶体管包括依次层叠设置的基板、栅电极、增反绝缘层、源电极、有机功能层和漏电极；增反绝缘层包括多层反射膜，且任意相邻两层所述反射膜的折射率不相同。上述顶反射垂直发光晶体管无需使用高反射电极即可增强顶发射垂直发光晶体管的出光效率。 【EN】The invention relates to a top-emission vertical light-emitting transistor and a preparation method and application thereof, wherein the top-emission vertical light-emitting transistor comprises a substrate, a gate electrode, an anti-reflection insulating layer, a source electrode, an organic functional layer and a drain electrode which are sequentially stacked; the anti-reflection insulating layer comprises a plurality of layers of reflecting films, and the refractive indexes of any two adjacent layers of the reflecting films are different. The light emitting efficiency of the top-reflection vertical light emitting transistor can be enhanced without using a high-reflection electrode.

摘要：【中文】本发明涉及一种热活化延迟荧光材料及其制备方法和应用、有机电致发光器件。所述热活化延迟荧光材料为具有式(I)结构的化合物：式(I)中，R为含氮供电子基团，所述R的结构为其中，Ar₁和Ar₂独立地选自H或碳原子数为1～24个的烷基，且Ar₁和Ar₂中至少有一个为烷基；或者，Ar₁和Ar₂独立地选自取代或未取代的苯基；或者，Ar₁和Ar₂独立地选自取代或未取代的苯基，其中Ar₁、Ar₂与N原子可以连接成五元环，或Ar₁、Ar₂、N原子与独立于所述Ar₁和Ar₂基团的另一原子连接成六元环，所述另一原子为C、N、S、O或Si。该系列材料由于电子给体部分与电子受体部分之间的空间位阻大，能够降低三线态与单线态能级之间的能级差，可以提高器件的发光量子效率。 【EN】The invention relates to a thermal activation delayed fluorescent material, a preparation method and application thereof, and an organic electroluminescent device. The heat-activated delayed fluorescence material is a compound with a structure shown in a formula (I):in the formula (I), R is a nitrogen-containing electron-donating group and has a structureWherein Ar is₁And Ar₂Independently selected from H or alkyl with 1-24 carbon atoms, and Ar₁And Ar₂At least one of which is an alkyl group; or, Ar₁And Ar₂Independently selected from substituted or unsubstituted phenyl; or, Ar₁And Ar₂Independently selected from substituted or unsubstituted phenyl, wherein Ar₁、Ar₂With N atoms being able to be joined to form a five-membered ring, or Ar₁、Ar₂N atom and independently of said Ar₁And Ar₂The other atom of the group, which is C, N, S, O or Si, is connected to a six-membered ring. The series of materials have large steric hindrance between the electron donor part and the electron acceptor part, so that the energy level difference between the triplet state energy level and the singlet state energy level can be reduced, and the luminous quantum efficiency of the device can be improved.