摘要：【中文】提供了一种蚀刻组合物和一种使用该蚀刻组合物制造半导体器件的方法。根据实施例，所述蚀刻组合物可以包括：大约15重量％至大约75重量％的过乙酸；氟化合物；胺化合物；以及有机溶剂。 【EN】An etching composition and a method of manufacturing a semiconductor device using the same are provided. According to an embodiment, the etching composition may include: about 15% to about 75% by weight of peracetic acid; a fluorine compound; an amine compound; and an organic solvent.

摘要：【中文】公开了蚀刻金属阻挡层和金属层的方法以及制造半导体器件的方法。所述方法包括：在衬底上形成金属阻挡层和金属层；以及使用蚀刻组合物蚀刻金属阻挡层和金属层。蚀刻组合物可以包括：氧化剂，选自于硝酸、溴酸、碘酸、高氯酸、过溴酸、高碘酸、硫酸、甲磺酸、对甲苯磺酸、苯磺酸或它们的组合；金属蚀刻抑制剂，包括由如在说明书中所示的化学式1表示的化合物；以及金属氧化物增溶剂，选自于磷酸、磷酸盐、具有3个至20个碳原子的羧酸或它们的组合。 【EN】Methods of etching metal barrier and metal layers and methods of fabricating semiconductor devices are disclosed. The method comprises the following steps: forming a metal barrier layer and a metal layer on a substrate; and etching the metal barrier layer and the metal layer using the etching composition. The etching composition may include: an oxidizing agent selected from the group consisting of nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methanesulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or combinations thereof; a metal etching inhibitor comprising a compound represented by chemical formula 1 as shown in the specification; and a metal oxide solubilizing agent selected from phosphoric acid, phosphate, carboxylic acids having 3 to 20 carbon atoms, or combinations thereof.