摘要：【中文】本发明公开了一种抗单粒子瞬态脉冲反相器加固电路，属于集成电路、电路抗辐照加固技术领域。其包括第一、第二、第三、第四、第五、第六场效应晶体管，第三、第四场效应晶体管的漏极相连，第一、第二晶体管的源极、漏极分别相连并且源极和第三、第四场效应晶体管的漏极相连，第五场效应晶体管的源极和衬底同时接电源，第五场效应晶体管的漏级和第三场效应晶体管的源极相连，第六场效应晶体管的源极和衬底同时接地，第六场效应晶体管的漏极和第四场效应晶体管的源极相连，第一、第二、第三、第四、第五、第六场效应晶体管的栅极相连。本发明不仅能够完成普通反相器的逻辑功能，还具备高性能的抗单粒子效应的性能。 【EN】The invention discloses a single-event transient pulse resistant inverter reinforcing circuit, and belongs to the technical field of irradiation resistance reinforcement of integrated circuits and circuits. The grid-connected type field-effect transistor comprises a first field-effect transistor, a second field-effect transistor, a third field-effect transistor, a fourth field-effect transistor, a fifth field-effect transistor and a sixth field-effect transistor, wherein the drains of the third field-effect transistor and the fourth field-effect transistor are connected, the sources and the drains of the first transistor and the second transistor are respectively connected, the sources are connected with the drains of the third field-effect transistor and the fourth field-effect transistor, the source of the fifth field-effect transistor and the substrate are simultaneously connected with the power supply, the drain of the fifth field-effect transistor and the source of the third field-effect transistor are simultaneously connected with the ground, the drain of the sixth field-effect transistor and the source of the fourth field-effect transistor are connected, and the grids of the first field-effect transistor. The invention not only can complete the logic function of the common inverter, but also has the performance of high-performance single event effect resistance.

摘要：本发明属于刚性铺装用混凝土材料领域，涉及一种桥面碱激发混凝土材料及其制备方法，该桥面碱激发混凝土的主要成分如下：平均粒径0.12～0.212mm的石英砂147～187份，平均粒径0.212～0.38mm的石英砂258～298份，平均粒径1～2.36mm的石英砂647～687份，S95级矿粉700～740份，硅灰60～100份，模数为1.3的水玻璃硅酸钠溶液140～180份，水胶比0.23～0.27，聚羧酸减水剂14～18份，缓凝剂22～26份，0.18～0.23mm的镀铜钢纤维214～254份。本发明技术方案制备的桥面碱激发混凝土具有粘性大、流动度好、凝结硬化较快、早期强度高、高耐久性能以及良好的环保性能等特点，显著提高钢混组合桥面混凝土的工作性能、力学性能和耐久性能。