当前查询到83条专利与查询词 "【中文】王彦杰【EN】Wang Yanjie"相关,搜索用时0.4374803秒!排序方式:
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申请号:201911052406.3 公开号:CN110950858A 主分类号:C07D455/03
摘要:【中文】本发明提供了改进的一种耦合出光材料,发明的目的是实现高热稳定性、高折射率的耦合出光材料。其结构通式为:n=1,2;m=0,1,2。合成了一系列基于噻唑并[2,3,4‑kl]吩噻嗪取代苯胺类CPL。这类分子通过将三苯胺中的苯环通过碳硫键进行连接,形成硅烷萘[3,2,1‑de]蒽,以此合成取代芳基胺类材料。这类材料刚性、平面性的增强,不仅增加CPL热稳定性,而且使得材料的折射率明显提高,有利于耦合出光。本发明还提供了所述耦合出光材料的制备方法。 【EN】The invention provides an improved light coupling-out material, and aims to realize a light coupling-out material with high thermal stability and high refractive index. Its structureThe general formula is:n is 1, 2; and m is 0,1 and 2. A series of thiazole [2,3,4-kl ] -based compounds are synthesized]Phenothiazine is substituted for aniline CPL. The molecules are connected through a carbon-sulfur bond through benzene rings in triphenylamine to form silane naphthalene [3,2,1-de ]]Anthracene, so as to synthesize substituted aryl amine material. The rigidity and the planarity of the material are enhanced, so that the thermal stability of the CPL is improved, the refractive index of the material is obviously improved, and the material is beneficial to light coupling. The invention also provides a preparation method of the coupled light-emitting material.
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申请号:201911210769.5 公开号:CN111004243A 主分类号:C07D487/06
摘要:【中文】本申请为吲哚并[3,2,1‑jk]咔唑衍生物、有机电致发光器件及显示面板,提供一种吲哚并[3,2,1‑jk]咔唑衍生物,具有式(I)所示结构。该些吲哚并[3,2,1‑jk]咔唑衍生物通过不同官能团的搭配,获得了具有显著高热稳定性、高折射率和低吸收率的特性。 【EN】The application provides an indolo [3,2,1-jk ] carbazole derivative, an organic electroluminescent device and a display panel, and the indolo [3,2,1-jk ] carbazole derivative has a structure shown in a formula (I). The indolo [3,2,1-jk ] carbazole derivatives have the characteristics of remarkable high thermal stability, high refractive index and low absorptivity through the matching of different functional groups.
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申请号:201911234100.X 公开号:CN111018726A 主分类号:C07C225/24
摘要:【中文】本发明公开了一种热活化延迟荧光分子及其制备方法、电致热激活延迟荧光器件,热活化延迟荧光分子包括电子给体、电子受体以及连接所述电子给体和所述电子受体的π桥,其中,所述π桥包括芳基π桥。本发明的有益效果在于本发明的热活化延迟荧光分子及其制备方法、电致热激活延迟荧光器件,热活化延迟荧光分子通过更大平面芳基π桥的引入,能够有效抑制非辐射跃迁速率,从而获得高的光致发光量子产率。 【EN】The invention discloses a thermally activated delayed fluorescence molecule, a preparation method thereof and an electrothermal activated delayed fluorescence device. The thermally activated delayed fluorescence molecule, the preparation method thereof and the electrothermal activated delayed fluorescence device have the advantages that the thermally activated delayed fluorescence molecule can effectively inhibit the non-radiative transition rate by introducing a larger plane aryl pi bridge, so that high photoluminescence quantum yield is obtained.
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申请号:201911252868.X 公开号:CN111129359A 主分类号:H01L51/56
摘要:【中文】本发明公开了一种掩膜板组、OLED面板及其制备方法,掩膜板组用于制备光耦合层,光耦合层具有若干光耦合单元,所述光耦合单元包括第一光耦合单元,第二光耦合单元和第三光耦合单元,第一掩膜板,包括第一开口和第一遮挡区,第一开口用于初步蒸镀光耦合层的所有光耦合单元;第二掩膜板,包括若干第二开口和第二遮挡区,第二开口用于再次蒸镀光耦合层中第三光耦合单元,或用于再次蒸镀光耦合层中第二光耦合单元和第三光耦合单元。本发明的有益效果在于本发明的掩膜板组、OLED面板及其制备方法通过设计合理的精掩膜板组,提高所制备的OLED面板的效率,极大的节省了制备工序,节约了成本。 【EN】The invention discloses a mask plate group, an OLED panel and a preparation method thereof, wherein the mask plate group is used for preparing a light coupling layer, the light coupling layer is provided with a plurality of light coupling units, each light coupling unit comprises a first light coupling unit, a second light coupling unit and a third light coupling unit, the first mask plate comprises a first opening and a first shielding area, and the first opening is used for preliminarily evaporating all light coupling units of the light coupling layer; and the second mask plate comprises a plurality of second openings and a second shielding area, and the second openings are used for evaporating the third optical coupling units in the optical coupling layer again or evaporating the second optical coupling units and the third optical coupling units in the optical coupling layer again. The mask plate group, the OLED panel and the preparation method thereof have the advantages that the efficiency of the prepared OLED panel is improved through the fine mask plate group with reasonable design, the preparation procedures are greatly saved, and the cost is saved.
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申请号:201911274056.5 公开号:CN111138239A 主分类号:C07C13/567
摘要:【中文】本发明提供了一种荧光材料及其应用。其中所述荧光材料,其化合物分子结构中包括芴结构,其中所述芴结构的侧链上连接有发光核,其采用如下的分子结构通式:其中上述式中的所述L1结构和L2结构中至少有一个是发光核结构。本发明提供的所述荧光材料采用新型的分子结构设计,在抑制发光核之间聚集的同时,还能不影响其发光核的荧光发光效率。 【EN】The invention provides a fluorescent material and application thereof. The molecular structure of the fluorescent material comprises a fluorene structure, wherein a side chain of the fluorene structure is connected with a luminescent core, and the luminescent core adopts the following molecular structure general formula:wherein at least one of the L1 structure and the L2 structure in the above formula is a light-emitting core structure. The fluorescent material provided by the inventionThe material adopts a novel molecular structure design, and the fluorescence luminous efficiency of the luminous core can not be influenced while the aggregation between the luminous cores is inhibited.
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申请号:202010235647.8 公开号:CN111211391A 主分类号:H01P1/213
摘要:【中文】本发明实施例公开了一种合路器,属于微波射频技术领域。该合路器包括:呈中空结构的腔体;多个谐振器,位于所述腔体内,并与所述腔体配合形成多个滤波器;电桥,所述电桥包括梳子状电桥导带片,所述电桥导带片中的梳背通过绝缘部件固定在所述腔体内,所述电桥导带片中的每根梳齿通过导电部件固定在所述腔体内,且每根梳齿与一个谐振器之间形成电耦合。本发明实施例可以简化合路器的结构,降低合路器的成本,使得合路器易加工和易实现,并具有高隔离度和低插入损耗的电器性能。 【EN】The embodiment of the invention discloses a combiner, and belongs to the technical field of microwave radio frequency. This combiner includes: a cavity body with a hollow structure; the resonators are positioned in the cavity and matched with the cavity to form a plurality of filters; the bridge comprises a comb-shaped bridge conducting strip piece, a comb back in the bridge conducting strip piece is fixed in the cavity through an insulating part, each comb tooth in the bridge conducting strip piece is fixed in the cavity through a conducting part, and electric coupling is formed between each comb tooth and one resonator. The embodiment of the invention can simplify the structure of the combiner, reduce the cost of the combiner, ensure that the combiner is easy to process and realize, and has the electrical performance of high isolation and low insertion loss.
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申请号:201811130798.6 公开号:CN110956060A 主分类号:G06K9/00
摘要:【中文】本申请公开了一种动作识别方法及装置。该方法包括:提取包括有人脸的图像的特征;基于所述特征提取可能包括预定动作的多个候选框;基于多个所述候选框确定动作目标框,其中,所述动作目标框包括人脸的局部区域和动作交互物;基于所述动作目标框进行预定动作的分类,获得动作识别结果。还公开了相应的装置。本申请可实现对精细动作的识别。 【EN】The application discloses a method and a device for recognizing actions. The method comprises the following steps: extracting the characteristics of an image comprising a human face; extracting a plurality of candidate boxes which possibly comprise a predetermined action based on the features; determining an action target frame based on the candidate frames, wherein the action target frame comprises a local area of a human face and an action interactive object; and classifying the preset action based on the action target frame to obtain an action recognition result. A corresponding apparatus is also disclosed. The application can realize the identification of fine actions.
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申请号:201811132681.1 公开号:CN110956061A 主分类号:G06K9/00
摘要:【中文】本公开涉及一种动作识别方法及装置,驾驶员状态分析方法及装置,所述动作识别方法包括:在检测图像中检测人脸的目标部位;根据所述目标部位的检测结果在所述检测图像中截取与所述目标部位对应的目标图像;根据所述目标图像识别所述人脸所属的对象是否执行设定的动作。本公开实施例可以适用于不同的检测图像中面积大小不同的人脸,也能够适用不同脸型的人脸。本公开实施例的适用范围广。目标图像即可以包括足够的用于分析的信息,也可以避免由于截取的目标图像的面积过大、无用信息过多导致的系统处理效率低的问题。 【EN】The present disclosure relates to a method and a device for recognizing an action, and a method and a device for analyzing a driver state, wherein the method for recognizing the action comprises the following steps: detecting a target part of a human face in a detection image; intercepting a target image corresponding to the target part from the detection image according to the detection result of the target part; and identifying whether the object to which the face belongs executes a set action or not according to the target image. The embodiment of the disclosure can be suitable for faces with different areas in different detection images and also suitable for faces with different face shapes. The application range of the embodiment of the disclosure is wide. The target image can contain enough information for analysis, and the problem of low system processing efficiency caused by too large area and too much useless information of the intercepted target image can be avoided.
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申请号:202010018179.9 公开号:CN111209867A 主分类号:G06K9/00
摘要:【中文】本公开提供了一种表情识别方法及装置,包括:获取人脸图像;根据所述人脸图像,识别所述人脸图像代表的人脸上的至少两个器官中每个器官的动作;基于识别到的所述每个器官的动作,确定所述人脸图像代表的人脸上的表情状态。通过这种方法,可以提高用户表情状态识别的精度。 【EN】The disclosure provides an expression recognition method and device, comprising the following steps: acquiring a face image; according to the face image, identifying the action of each organ in at least two organs on the face represented by the face image; and determining the expression state on the face represented by the face image based on the recognized action of each organ. By the method, the accuracy of the expression state recognition of the user can be improved.
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申请号:201911242907.8 公开号:CN111063731A 主分类号:H01L29/267
摘要:【中文】本发明公开了一种CNT‑IGZO薄膜异质结双极晶体管及其制备方法和应用,其包括IGZO层和覆盖在所述IGZO层表面的CNT薄膜;制备方法包括,采用射频磁控溅射法制备IGZO层作为沟道材料,采用溶液滴涂法在IGZO层表面沉积CNT薄膜。本发明将采用射频磁控溅射法制备得到的IGZO的上表面非常平整,其粗糙度<0.2nm,将P型CNT薄膜直接沉积在IGZO表面,使得P型有机半导体可以和N型氧化物半导体的电性能相接近,相对于现有技术而言,有效提高了该双极晶体管的电性能,且可以实现大面积阵列化,有很大的应用前景。 【EN】The invention discloses a CNT-IGZO thin film heterojunction bipolar transistor and a preparation method and application thereof, wherein the CNT-IGZO thin film heterojunction bipolar transistor comprises an IGZO layer and a CNT thin film covering the surface of the IGZO layer; the preparation method comprises the steps of preparing the IGZO layer as a channel material by adopting a radio frequency magnetron sputtering method, and depositing the CNT film on the surface of the IGZO layer by adopting a solution dripping method. According to the invention, the upper surface of the IGZO prepared by the radio frequency magnetron sputtering method is very flat, the roughness is less than 0.2nm, and the P-type CNT film is directly deposited on the surface of the IGZO, so that the electrical property of a P-type organic semiconductor can be close to that of an N-type oxide semiconductor, and compared with the prior art, the electrical property of the bipolar transistor is effectively improved, large-area array can be realized, and the application prospect is very wide.
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