摘要：【中文】本发明公开了一种无氟无硝酸浸法提纯制备超高纯石英砂的工艺。所述工艺包括煅烧、光波微波处理、水热酸浸处理和洗涤干燥的步骤。本发明采用光波微波处理，加热效率更高，促使了气液包裹体的破裂以及热运动下杂质的扩散迁移。在水热酸浸处理中，采用的基于巯基乙酸与硫酸、硫化碱的混合酸酸浸条件，产生了意想不到的酸浸效果。本发明得到的超高纯石英砂纯度达到99.999wt.%，杂质含量低于10ppm能满足航空航天、电子技术、光纤通讯等领域的需求。 【EN】The invention discloses a process for purifying and preparing ultra-pure quartz sand by a fluorine-free and nitric acid-free leaching method. The process comprises the steps of calcination, light wave microwave treatment, hydrothermal acid leaching treatment, washing and drying. The invention adopts light wave microwave treatment, has higher heating efficiency, and promotes the fracture of gas-liquid inclusion and the diffusion and the migration of impurities under thermal motion. In the hydrothermal acid leaching treatment, the mixed acid leaching condition based on thioglycollic acid, sulfuric acid and sodium sulfide is adopted, so that an unexpected acid leaching effect is generated. The purity of the ultra-pure quartz sand obtained by the invention reaches 99.999wt.%, and the impurity content is lower than 10ppm, so that the requirements of the fields of aerospace, electronic technology, optical fiber communication and the like can be met.

摘要：【中文】本发明公开了一种迭代水热法提纯石英砂的工艺及高纯石英砂。所述工艺包括预处理、煅烧、过筛、酸浸和清洗的步骤，其中煅烧和酸浸步骤进行迭代处理。本发明以石英砂精矿为原料，在改进的水热法基础上，通过对关键步骤的科学迭代处理工艺，对石英砂进行提纯，充分发挥了高温煅烧和水热酸浸过程对石英砂的纯化作用，使杂质去除效益得到最大化。本发明得到的高纯石英砂纯度不低于99.998%且杂质含量低于20ppm，能满足半导体行业的使用需求。 【EN】The invention discloses a process for purifying quartz sand by an iterative hydrothermal method and high-purity quartz sand. The process comprises the steps of pretreatment, calcination, sieving, acid leaching and cleaning, wherein the steps of calcination and acid leaching are subjected to iterative treatment. According to the method, the quartz sand concentrate is used as a raw material, and on the basis of an improved hydrothermal method, the quartz sand is purified by a scientific iterative treatment process of key steps, so that the purification effect of the high-temperature calcination and hydrothermal acid leaching processes on the quartz sand is fully exerted, and the impurity removal benefit is maximized. The purity of the high-purity quartz sand obtained by the invention is not lower than 99.998%, the impurity content is lower than 20ppm, and the use requirements of the semiconductor industry can be met.