摘要：【中文】本发明提供一种铁基超导前驱粉、其制备方法、铁基超导线带材，制备方法包括，1)在惰性气氛下，在温度为500～800℃、压力为1～20MPa条件下第一次热等静压处理制备铁基超导的原料粉末，处理时间为10～50小时，得到第一坯体；2)在惰性气氛下，粉碎所述第一坯体，然后在温度为550～650℃、压力为150～250MPa条件下进行第二次热等静压处理，处理时间为0.5～20小时，得到第二坯体；3)在惰性气氛下，粉碎所述第二坯体，得到前驱粉。该方法可以提高成相的反应程度，消除反应过程中的空洞和裂纹，大幅提高合成的铁基超前驱粉的相纯度。 【EN】The invention provides iron-based superconducting precursor powder, a preparation method thereof and an iron-based superconducting wire strip, wherein the preparation method comprises the steps of 1) preparing iron-based superconducting raw material powder by first hot isostatic pressing treatment under the conditions of 500-800 ℃ of temperature and 1-20 MPa of pressure in an inert atmosphere, wherein the treatment time is 10-50 hours, and obtaining a first blank body; 2) crushing the first green body in an inert atmosphere, and then performing secondary hot isostatic pressing treatment at the temperature of 550-650 ℃ and the pressure of 150-250 MPa for 0.5-20 hours to obtain a second green body; 3) and crushing the second blank under the inert atmosphere to obtain precursor powder. The method can improve the reaction degree of the phase formation, eliminate holes and cracks in the reaction process and greatly improve the phase purity of the synthesized iron-based super precursor powder.

摘要：【中文】本发明提供了一种高纯砷晶体的制备方法，属于原材料提纯技术领域。本发明在250～295℃进行第一阶段保温，有助于As₂O₅向As₂O₃转化；在300～460℃进行第二阶段保温，使砷原料表面的As₂O₃蒸发并随保护气排出提纯容器；在500～620℃进行第三阶段保温，使As升华形成砷蒸汽；再使提纯容器上、下部分温区按照不同的降温速率降温到300～460℃，使砷蒸汽可以缓慢凝结成晶体并长大，形成高纯砷晶体，同时砷原料表面及内部的As₂O₃仍然保持气体状态，并随保护气排出容器，从而将砷原料内的氧化物分离出来。本发明方法工艺简单，成本低廉，且生产的砷晶体纯度高，呈现金属光泽，氧含量小于0.5ppm。 【EN】The invention provides a preparation method of a high-purity arsenic crystal, and belongs to the technical field of raw material purification. The invention carries out the first-stage heat preservation at 250-295 ℃, and is beneficial to As₂O₅To As₂O₃Transformation; performing second-stage heat preservation at 300-460 ℃ to ensure that As on the surface of the arsenic raw material₂O₃Evaporating and discharging the purified gas out of the purification container along with the protective gas; carrying out third-stage heat preservation at 500-620 ℃ to sublimate As to form arsenic vapor; then cooling the upper and lower temperature zones of the purification container to 300-460 ℃ according to different cooling rates, so that the arsenic vapor can be slowly condensed into crystals and grow to form high-purity arsenic crystals, and meanwhile, As on the surface and in the arsenic raw material₂O₃While still in a gaseous state and is discharged from the vessel with the shielding gas to separate the oxides from the arsenic source material. The method and the process of the inventionSimple, low cost, high purity of the produced arsenic crystal, metallic luster and oxygen content less than 0.5 ppm.