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申请号:201811089900.2 公开号:CN110910922A 主分类号:G11C8/08
摘要:【中文】本发明实施例公开了一种位线电压的施加方法、装置、存储设备和存储介质。所述方法包括:编程过程中,当施加在选中字线上的编程电压脉冲信号中的每一个编程电压脉冲结束时,检测选中字线中的编程单元的导通阈值是否大于等于位线加压阈值且小于编程检验电压阈值;如果编程单元的导通阈值大于等于位线电压阈值且小于编程检验电压阈值,则在向选中字线施加下一个编程电压脉冲时,同时向编程单元对应的位线施加位线电压脉冲信号中的第一个位线电压脉冲。本发明实施例的技术方案实现了有效控制快速编程存储单元的编程速度,降低了编程结束时,快速编程存储单元与慢速编程存储单元的最大阈值差值,从而有效缩小了一个page在被编程之后的阈值电压分布宽度。 【EN】The embodiment of the invention discloses a bit line voltage applying method, a bit line voltage applying device, storage equipment and a storage medium. The method comprises the following steps: detecting whether the conduction threshold of the programming unit in the selected word line is more than or equal to the bit line pressurization threshold and less than the programming verification voltage threshold when each programming voltage pulse in the programming voltage pulse signal applied to the selected word line is ended in the programming process; and if the conduction threshold of the programming unit is greater than or equal to the bit line voltage threshold and less than the program verification voltage threshold, simultaneously applying the first bit line voltage pulse in the bit line voltage pulse signals to the bit line corresponding to the programming unit when applying the next program voltage pulse to the selected word line. The technical scheme of the embodiment of the invention realizes the effective control of the programming speed of the fast programming storage unit, and reduces the maximum threshold difference value between the fast programming storage unit and the slow programming storage unit when the programming is finished, thereby effectively reducing the threshold voltage distribution width of a page after being programmed.
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