摘要：【中文】本发明涉及航天器测控技术领域，提供了一种基于多波长测量获得大气折射率高度分布剖面的方法，包括：使用光电外测设备在不同波长下跟踪预定恒星，输出并记录测量系的测角数据；获取相同时间段恒星地固系精确星历数据；将恒星地固系精确星历数据转换为外测设备测量系的理论测元数据；以大气折射率高度分布的Hopfield模型的模式参数为待估未知数，建立模式参数待估方程组；对模式参数待估方程组进行求解，获得模式参数的数值解；将求解的模式参数代入模型获得大气折射率高度分布剖面。本发明具有成本低廉、精度高、适应性好等优势，能够获得不同情况下的大气折射率高度分布剖面，可以作为一种获得大气折射率高度分布剖面常规方法。 【EN】The invention relates to the technical field of spacecraft measurement and control, and provides a method for obtaining an atmospheric refractive index height distribution profile based on multi-wavelength measurement, which comprises the following steps: tracking a preset fixed star by using photoelectric external equipment under different wavelengths, and outputting and recording angle measurement data of a measurement system; acquiring accurate ephemeris data of fixed star earth systems in the same time period; converting the precise ephemeris data of the fixed star earth system into theoretical measurement metadata of a measurement system of external measurement equipment; establishing a mode parameter to-be-estimated equation set by taking a mode parameter of a Hopfield model with the height distribution of the atmospheric refractive index as an unknown to be estimated; solving an equation set to be estimated of the mode parameters to obtain a numerical solution of the mode parameters; and substituting the solved mode parameters into the model to obtain the atmosphere refractive index height distribution profile. The method has the advantages of low cost, high precision, good adaptability and the like, can obtain the atmosphere refractive index height distribution profile under different conditions, and can be used as a conventional method for obtaining the atmosphere refractive index height distribution profile.

摘要：【中文】本发明公开一种高转换效率异质结器件，包括p型晶硅衬底，所述p型晶硅衬底的底面设有背电极，p型晶硅衬底的顶面由下至上依次层叠有n型发射膜层、透明导电层与前电极，所述p型晶硅衬底的顶面呈凹凸的绒面结构；该异质结器件具有晶格匹配好、界面态密度低的优点，转换效率高，增强异质结光伏器件的整体性能。 【EN】The invention discloses a heterojunction device with high conversion efficiency, which comprises a p-type crystalline silicon substrate, wherein a back electrode is arranged on the bottom surface of the p-type crystalline silicon substrate, an n-type emission film layer, a transparent conducting layer and a front electrode are sequentially laminated on the top surface of the p-type crystalline silicon substrate from bottom to top, and the top surface of the p-type crystalline silicon substrate is of a concave-convex textured structure; the heterojunction device has the advantages of good lattice matching, low interface state density and high conversion efficiency, and the overall performance of the heterojunction photovoltaic device is enhanced.

摘要：【中文】本发明公开一种异质结光伏器件的制备方法，包括以下步骤：S1、取p型晶硅作为衬底，采用离子束刻蚀工艺或臭氧氧化刻蚀工艺在衬底顶面制作绒面结构；S2、采用磁控溅射工艺或蒸镀工艺在衬底的底面沉积背电极；S3、采用磁控溅射工艺在衬底的顶面沉积n型发射膜层；S4、采用磁控溅射工艺在n型发射膜层顶面沉积透明导电层；S5、采用磁控溅射工艺在透明导电层顶面沉积前电极，得到异质结光伏器件；方法得到的异质结光伏器件具有晶格匹配好、界面态密度低的优点，增强异质结光伏器件的整体性能。 【EN】The invention discloses a preparation method of a heterojunction photovoltaic device, which comprises the following steps: s1, taking p-type crystalline silicon as a substrate, and manufacturing a suede structure on the top surface of the substrate by adopting an ion beam etching process or an ozone oxidation etching process; s2, depositing a back electrode on the bottom surface of the substrate by adopting a magnetron sputtering process or an evaporation process; s3, depositing an n-type emission film layer on the top surface of the substrate by adopting a magnetron sputtering process; s4, depositing a transparent conducting layer on the top surface of the n-type emitting film layer by adopting a magnetron sputtering process; s5, depositing a front electrode on the top surface of the transparent conducting layer by adopting a magnetron sputtering process to obtain a heterojunction photovoltaic device; the heterojunction photovoltaic device obtained by the method has the advantages of good lattice matching and low interface state density, and the overall performance of the heterojunction photovoltaic device is enhanced.