摘要：【中文】本发明公开了一种单晶硅小片电池的制备方法，包括如下步骤：1）将单晶硅圆棒切成可制备电池整片的长方体状硅块；该硅块包括：一对相背设置的端面，以及位于该对端面之间的四个侧面；2）沿垂直于硅块一对端面且平行于硅块四个侧面中一个侧面的方向，将长方体状硅块切割出用于制备小片电池的长方体状小硅块；该小硅块包括一对相背设置的端面；3）沿平行于小硅块端面的方向，对小硅块进行切片，切割出小片硅片；4）将小片硅片制备成小片电池。小片硅片制备过程中存在的损伤层都能在制绒和背面刻蚀步骤中去除；而且后续的热氧化、叠层钝化膜沉积、SiNx薄膜沉积等步骤能够提供介质钝化和H钝化，大幅降低小片电池横断面的少子复合。 【EN】The invention discloses a preparation method of a monocrystalline silicon small cell, which comprises the following steps: 1) cutting the monocrystalline silicon round bar into cuboid silicon blocks capable of preparing the whole cell; the silicon block comprises: a pair of end faces arranged oppositely, and four side faces positioned between the pair of end faces; 2) cutting the cuboid-shaped silicon block into a cuboid-shaped small silicon block for preparing a small battery along a direction which is vertical to a pair of end faces of the silicon block and parallel to one side face of four side faces of the silicon block; the small silicon block comprises a pair of end faces which are arranged oppositely; 3) slicing the small silicon block along the direction parallel to the end face of the small silicon block, and cutting a small silicon wafer; 4) and preparing a small silicon wafer into a small battery. The damaged layer existing in the preparation process of the small silicon chip can be removed in the steps of texturing and back etching; and the subsequent steps of thermal oxidation, laminated passivation film deposition, SiNx film deposition and the like can provide medium passivation and H passivation, so that minority carrier recombination of the cross section of the small cell is greatly reduced.

摘要：【中文】本发明公开了一种小片电池的制备方法，包括如下步骤：1）将单晶硅或多晶硅硅材切割出可制备电池整片的整片硅片；2）将整片硅片切割出用于制备小片电池的小片硅片；3）将小片硅片制备成小片电池。本发明先将可制备电池整片的整片硅片切割出小片硅片，再直接将小片硅片制备成小片电池。小片硅片制备过程中存在的损伤层都能在制绒和背面刻蚀步骤中去除；而且后续的热氧化、叠层钝化膜沉积、SiNx薄膜沉积等步骤能够提供介质钝化和H钝化，大幅降低小片电池横断面的少子复合。相比由电池整片切片形成的小片电池，本发明小片电池的转换效率能够增加0.1‑0.2个百分点，本发明小片电池制作的光伏组件，功率能够提升近3W。 【EN】The invention discloses a preparation method of a small battery, which comprises the following steps: 1) cutting the monocrystalline silicon or the polycrystalline silicon material into a whole silicon wafer capable of preparing a whole cell; 2) cutting the whole silicon wafer into small silicon wafers for preparing small batteries; 3) and preparing a small silicon wafer into a small battery. The invention firstly cuts the whole silicon slice which can be used for preparing the whole cell into small silicon slices, and then directly prepares the small silicon slices into small cells. The damaged layer existing in the preparation process of the small silicon chip can be removed in the steps of texturing and back etching; and the subsequent steps of thermal oxidation, laminated passivation film deposition, SiNx film deposition and the like can provide medium passivation and H passivation, so that minority carrier recombination of the cross section of the small cell is greatly reduced. Compared with a small cell formed by integrally slicing the cell, the conversion efficiency of the small cell can be increased by 0.1-0.2 percentage point, and the power of the photovoltaic module manufactured by the small cell can be improved by nearly 3W.