摘要：【中文】本发明公开了一种异质结电池及其制备方法，所述异质结电池，包括：硅层衬底、衬底正面的本征非晶硅层一、掺杂非晶硅层一、TCO层一、正面金属电极、衬底背面的本征非晶硅层二、掺杂非晶硅层二、TCO层二、背面金属电极，所述TCO层一和TCO层二的表面设有凹槽，凹槽的深度分别小于TCO层一、TCO层二的厚度，所述正面、背面金属电极填充在所设凹槽处，分别形成金属导电层一和金属导电层二。本发明提供的技术方案在不增加银浆耗量的前提下，提升电池片主栅粘结拉力，提升光伏组件的可靠性。 【EN】The invention discloses a heterojunction battery and a preparation method thereof, wherein the heterojunction battery comprises: the solar cell comprises a silicon layer substrate, a first intrinsic amorphous silicon layer on the front side of the substrate, a first doped amorphous silicon layer, a first TCO layer, a front metal electrode, a second intrinsic amorphous silicon layer on the back side of the substrate, a second doped amorphous silicon layer, a second TCO layer and a back metal electrode, wherein grooves are formed in the surfaces of the first TCO layer and the second TCO layer, the depth of each groove is smaller than the thickness of the first TCO layer and the thickness of the second TCO layer, and the front metal electrode and the back metal electrode are filled in the grooves to form a first metal conducting layer and a second metal conducting layer. According to the technical scheme provided by the invention, on the premise of not increasing the consumption of silver paste, the bonding tension of the main grid of the cell is improved, and the reliability of the photovoltaic module is improved.

摘要：【中文】本发明公开了一种异质结太阳电池及其制备工艺，异质结太阳电池包括：N型单晶硅片、本征非晶硅膜层一、N型非晶硅膜层、本征非晶硅膜层二、P型非晶硅膜层、导电性薄膜层和金属电极，N型单晶硅片的正面依次沉积本征非晶硅膜层一、N型非晶硅膜层，N型单晶硅片的背面依次沉积本征非晶硅膜层二、P型非晶硅膜层；本征N型非晶硅层和本征P型非晶硅层的外侧均沉积有导电性薄膜层，导电性薄膜层的外侧均印刷有金属电极。本发明导电性薄膜层结构导电层面积较大，掩膜区域宽度较小，且不容易出现绕镀的现象，不会覆盖N型硅片的边缘导致异质结短路，不需要考虑短接导致漏电流过高的情况，从而有利于提升异质结太阳能电池的转换效率。 【EN】The invention discloses a heterojunction solar cell and a preparation process thereof, wherein the heterojunction solar cell comprises: the N-type monocrystalline silicon piece, the intrinsic amorphous silicon film layer I, the N-type amorphous silicon film layer, the intrinsic amorphous silicon film layer II, the P-type amorphous silicon film layer, the conductive thin film layer and the metal electrode are sequentially deposited on the front side of the N-type monocrystalline silicon piece, the intrinsic amorphous silicon film layer I and the N-type amorphous silicon film layer are sequentially deposited on the back side of the N-type monocrystalline silicon piece, and the intrinsic amorphous silicon film layer II and the P-type amorphous silicon film layer are sequentially deposited on the back side of the N; and conductive thin film layers are deposited on the outer sides of the intrinsic N-type amorphous silicon layer and the intrinsic P-type amorphous silicon layer, and metal electrodes are printed on the outer sides of the conductive thin film layers. The conductive layer of the conductive thin film layer structure has larger area and smaller width of the mask area, is not easy to generate the phenomenon of winding plating, can not cover the edge of an N-type silicon wafer to cause heterojunction short circuit, does not need to consider the condition of high leakage current caused by short circuit, and is favorable for improving the conversion efficiency of the heterojunction solar cell.

摘要：【中文】本发明公开了一种用于异质结太阳能电池的印刷网版及其印刷方法，其中，印刷网版包括主栅网版和副栅网版，主栅网版上设有主栅，主栅上设有第一定位点和抓手，副栅网版上设有细栅线和第二定位点，主栅网版和副栅网版可以通过定位点套印；印刷时在电池正面金属电极采用分步印刷主栅网版和副栅网版，然后主栅网版和主栅网版套印即可完成印刷。本发明采用分步印刷主细栅搭接印刷的方法，可以在印刷过程中防止断栅问题，增加电池效率。 【EN】The invention discloses a printing screen for a heterojunction solar cell and a printing method thereof, wherein the printing screen comprises a main grid screen and a secondary grid screen, wherein the main grid screen is provided with a main grid, the main grid is provided with a first positioning point and a gripper, the secondary grid screen is provided with a fine grid line and a second positioning point, and the main grid screen and the secondary grid screen can be overprinted through the positioning points; when in printing, the metal electrode on the front surface of the battery adopts the step-by-step printing of the main grid screen plate and the auxiliary grid screen plate, and then the main grid screen plate and the main grid screen plate are overprinted to finish the printing. The invention adopts the method of step-by-step printing main fine grid lap printing, can prevent the grid breaking problem in the printing process and increase the battery efficiency.

摘要：【中文】本发明公开了一种适用于异质结太阳能电池的光注入工艺。通过照射光源对异质结电池进行光注入，与此同时，采用辅助加热方式对异质结电池进行加热，光注入强度高于10000W/m²，光注入的时间在45‑600s之间。本发明的优点在于：通过采用照射光源直接对异质结电池进行光注入，与此同时进行辅助加热，由此在短时间内提供一个高的光注入量，在此过程中，在最短的时间内尽可能的提高光注入量作用在含非晶硅膜层的N型异质结电池上，由此使其钝化效果大幅度提升，其巧妙地采用短时高注入的手段并优化了处理的工艺，使得异质结电池的转换效率得到大幅度提高。 【EN】The invention discloses a light injection process suitable for a heterojunction solar cell. The heterojunction battery is subjected to light injection through the irradiation light source, and meanwhile, the heterojunction battery is heated in an auxiliary heating mode, and the light injection intensity is higher than 10000W/m²The time of light injection is between 45-600 s. The invention has the advantages that: the heterojunction battery is directly subjected to light injection by adopting the irradiation light source, and meanwhile, auxiliary heating is carried out, so that a high light injection amount is provided in a short time, in the process, the light injection amount is improved as far as possible in the shortest time to act on the N-type heterojunction battery containing the amorphous silicon film layer, the passivation effect of the heterojunction battery is greatly improved, the short-time high injection means is skillfully adopted, the processing process is optimized, and the conversion efficiency of the heterojunction battery is greatly improved.

摘要：【中文】本发明公开了一种高效晶硅/非晶硅异质结太阳能电池，包括硅层衬底、设置在硅层衬底正面的本征非晶硅层一以及设置在硅层衬底背面的本征非晶硅层二；所述本征非晶硅层二的背面依次设置有掺杂非晶硅层A和TCO层一，还包括：受光面掺杂层和TCO层二，所述受光面掺杂层设置在所述本征非晶硅层一的正面，所述TCO层二设置在所述受光面掺杂层的正面；所述受光面掺杂层至少包括掺杂非晶硅层B和掺杂微晶硅层。本发明制备的高效晶硅/非晶硅异质结太阳能电池在减小HJT电池受光面非晶硅寄生吸收的同时，也提高受光面非晶硅层的导电性，膜层同时具有优异的光学性能和电学性能。 【EN】The invention discloses a high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell, which comprises a silicon layer substrate, an intrinsic amorphous silicon layer I arranged on the front side of the silicon layer substrate and an intrinsic amorphous silicon layer II arranged on the back side of the silicon layer substrate; the back of the second intrinsic amorphous silicon layer is sequentially provided with a doped amorphous silicon layer A and a TCO layer I, and the back of the second intrinsic amorphous silicon layer further comprises: the light receiving surface doping layer is arranged on the front surface of the intrinsic amorphous silicon layer I, and the TCO layer II is arranged on the front surface of the light receiving surface doping layer; the light receiving surface doping layer at least comprises an amorphous silicon doping layer B and a microcrystalline silicon doping layer. The high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell prepared by the invention reduces the parasitic absorption of amorphous silicon on the illuminated surface of the HJT cell, improves the conductivity of the amorphous silicon layer on the illuminated surface, and has excellent optical performance and electrical performance.