摘要：【中文】本发明属于硅基光伏技术领域，具体为具有亚带隙红外响应的宽谱晶硅太阳电池及其制备方法。本发明太阳电池结构包括：包括上、下两个部分：上半部分为透明导电电极ITO、由黑硅与钝化层组成的常规PN结，下半部分为由N型黑硅与金属纳米颗粒制成的具有亚带隙红外光伏响应的肖特基电池、背电极Al；上、下两部分之间由透明导电胶PEDOT:PSS连接；其中，ITO和Al作为电池的负极，中间的导电胶PEDOT:PSS作为电池的正极，上下电池呈并联叠层结构。本发明有效地将常规PN结电池与具有亚带隙红外光伏响应的肖特基电池结合，与常规PN结电池相比，拓宽了电池的光谱响应范围，提高了光电转化效率。 【EN】The invention belongs to the technical field of silicon-based photovoltaics, and particularly relates to a wide-spectrum crystalline silicon solar cell with sub-band gap infrared response and a preparation method thereof. The solar cell structure of the present invention comprises: comprises an upper part and a lower part: the upper half part is a transparent conductive electrode ITO, a conventional PN junction consisting of black silicon and a passivation layer, and the lower half part is a Schottky cell with sub-band gap infrared photovoltaic response and made of N-type black silicon and metal nano particles and a back electrode Al; the upper part and the lower part are connected by transparent conductive adhesive PEDOT, PSS; the ITO and the Al are used as the negative electrodes of the battery, the conductive adhesive PEDOT and PSS in the middle are used as the positive electrodes of the battery, and the upper battery and the lower battery are in a parallel laminated structure. The invention effectively combines the conventional PN junction battery with the Schottky battery with sub-band gap infrared photovoltaic response, widens the spectral response range of the battery and improves the photoelectric conversion efficiency compared with the conventional PN junction battery.