摘要：【中文】本发明提出纤维状垂直沟道晶体管，所述晶体管从内至外依次设有栅极衬底、聚合物绝缘层、氧化物绝缘层、网状源极、半导体层和电极；所述电极包括半导体层上的漏极接触电极，还包括位于半导体层旁的设于网状源极上的源极接触电极；所述栅极衬底以直径为100μm至200μm的金属丝成型；所述金属丝为银丝或铝丝；本发明突破了传统工艺对沟道长度的限制，可以获得高的光电性能和出色的机械鲁棒性，而且有利于将器件编织集成在衣物上。 【EN】The invention provides a fibrous vertical channel transistor, which is sequentially provided with a grid substrate, a polymer insulating layer, an oxide insulating layer, a net-shaped source electrode, a semiconductor layer and an electrode from inside to outside; the electrode comprises a drain contact electrode on the semiconductor layer and a source contact electrode which is positioned beside the semiconductor layer and is arranged on the reticular source electrode; the grid substrate is formed by a metal wire with the diameter of 100-200 mu m; the metal wire is a silver wire or an aluminum wire; the invention breaks through the limitation of the traditional process on the length of the channel, can obtain high photoelectric performance and excellent mechanical robustness, and is favorable for weaving and integrating devices on clothes.

摘要：【中文】本发明涉及一种基于驻极体的突触晶体管及其制备方法，所述的晶体管自下而上由带有绝缘层的基底、驻极体介电层、有机半导体层以及顶部电极组成；所述的驻极体介电层在绝缘层与半导体之间形成一个界面捕获层，用于捕获电子与空穴，形成额外的电场，对半导体层起到额外的栅极调控作用。该晶体管具有高的开关比，较大的电导调控范围，并且电导增加与调控的脉冲数呈现很好的线性关系，适用于神经形态计算，有效地提高对模式识别的精度，为未来的人工突触提供了一个应用前景。 【EN】The invention relates to an electret-based synapse transistor and a preparation method thereof, wherein the transistor consists of a substrate with an insulating layer, an electret dielectric layer, an organic semiconductor layer and a top electrode from bottom to top; the electret dielectric layer forms an interface capture layer between the insulating layer and the semiconductor, and the interface capture layer is used for capturing electrons and holes to form an extra electric field and play an extra grid regulation role on the semiconductor layer. The transistor has high switching ratio and larger conductance regulation range, and the conductance increase and the regulated pulse number show good linear relation, thereby being suitable for the calculation of the nerve morphology, effectively improving the accuracy of the mode identification and providing an application prospect for the future artificial synapse.

摘要：【中文】本发明涉及一种具有介质层的交流驱动钙钛矿LED器件，包括从下到上依次层叠在衬底基板上的阳极层、第一介电层、空穴传输层、钙钛矿发光层、电子传输层和阴极层；所述所述阴级层和阳极层两端加上交流电源实现交流驱动的钙钛矿LED。本发明不仅可以有效地避免电荷积聚现象，还可以有效地避免有机层与阴、阳极之间的电化学反应，从而保护钙钛矿LED器件不受大气中水分和氧气的影响。 【EN】The invention relates to an alternating current driving perovskite LED device with a dielectric layer, which comprises an anode layer, a first dielectric layer, a hole transmission layer, a perovskite luminous layer, an electron transmission layer and a cathode layer which are sequentially stacked on a substrate from bottom to top; and an alternating current power supply is added at two ends of the cathode layer and the anode layer to realize the alternating current driven perovskite LED. The invention can not only effectively avoid the charge accumulation phenomenon, but also effectively avoid the electrochemical reaction between the organic layer and the cathode and the anode, thereby protecting the perovskite LED device from the influence of moisture and oxygen in the atmosphere.

摘要：【中文】本发明涉及一种具有电荷产生层的交流驱动钙钛矿LED器件。包括自下而上依次层叠在衬底基板上的阳极层、第一介电层、第一p‑n结型电荷产生层、发光层、第二p‑n结型电荷产生层、第二介电层和阴极层。本发明所述发光层采用溶液法制备，操作简单，适用于大规模生产，并且能大幅度降低生产成本。并且在限定的电压或功率下，通过调节频率可以对钙钛矿LED的亮度进行调节；还可以通过改变钙钛矿材料的组分，实现器件的多色发光。 【EN】The invention relates to an AC driven perovskite LED device with a charge generation layer. The light-emitting diode comprises an anode layer, a first dielectric layer, a first p-n junction type charge generation layer, a light-emitting layer, a second p-n junction type charge generation layer, a second dielectric layer and a cathode layer which are sequentially stacked on a substrate from bottom to top. The luminescent layer is prepared by a solution method, is simple to operate, is suitable for large-scale production, and can greatly reduce the production cost. And the brightness of the perovskite LED can be adjusted by adjusting the frequency under a defined voltage or power; multicolor emission of the device can also be achieved by varying the composition of the perovskite material.

摘要：【中文】本发明涉及一种垂直结构的有机电化学晶体管及其制备方法，所述垂直结构的有机电化学晶体管为顶栅垂直结构，从下往上依次为基底、漏电极、有源层、网状源电极，电解质层和栅电极。其制备方法包括以下步骤：1）在具有图案化漏电极的基底上通过旋涂工艺沉积聚合物导电薄膜并退火，制得有源层；2）在有源层上通过旋涂工艺沉积网状源电极薄膜并退火；3）在网状源电极上通过旋涂或刮涂工艺沉积聚合物离子凝胶电解质并退火，制得电解质层；4）在电解质层上通过热蒸镀的方法制备栅电极，得到垂直结构的有机电化学晶体管。该方法制备的有机电化学晶体管可以缩小器件尺寸，提高器件性能，扩展其应用范围。 【EN】The invention relates to an organic electrochemical transistor with a vertical structure and a preparation method thereof. The preparation method comprises the following steps: 1) depositing a polymer conductive film on the substrate with the patterned drain electrode through a spin coating process and annealing to prepare an active layer; 2) depositing a mesh-shaped source electrode film on the active layer by a spin coating process and annealing; 3) depositing polymer ion gel electrolyte on the mesh source electrode by a spin coating or blade coating process and annealing to prepare an electrolyte layer; 4) and preparing a gate electrode on the electrolyte layer by a thermal evaporation method to obtain the organic electrochemical transistor with a vertical structure. The organic electrochemical transistor prepared by the method can reduce the size of the device, improve the performance of the device and expand the application range of the device.

摘要：【中文】本发明涉及一种基于有机薄膜晶体管的可拉伸突触及其制备方法，其结构由下至上依次包括可拉伸复合共面栅衬底、褶皱形的有机半导体层以及离子凝胶绝缘层。所述可拉伸复合共面栅衬底是由聚二甲基硅氧烷（PDMS）薄膜与设置于其上的图案化的共面电极构成。本发明可以有效的推动柔性可拉伸电子在生物可植入、人机交互界面和可穿戴等方面的发展。 【EN】The invention relates to a stretchable synapse based on an organic thin film transistor and a preparation method thereof. The stretchable composite coplanar gate substrate is composed of a Polydimethylsiloxane (PDMS) film and a patterned coplanar electrode arranged on the PDMS film. The invention can effectively promote the development of flexible stretchable electronics in the aspects of biological implantation, man-machine interaction interface, wearing and the like.

摘要：【中文】本发明提出一种自供电触觉传感摩擦纳米发电机其制备方法，包括下基板、下电极、摩擦介质层、上电极和上基板，下电极设于下基板上；摩擦介质层设于下电极上；上电极设于上基板上，摩擦介质层为双网络薄膜；纳米发电机初始状态下的摩擦介质层与上电极分离，当纳米发电机受到预压力而进入工作状态时，双网络薄膜与上基板摩擦使两者表面积累电荷并在上电极和下电极间形成平衡电位；当因受到触摸使纳米发电机所受压力变化时，上电极与下电极的间距变化使电位的平衡状态无法维持，从而形成上电极与下电极之间的信号电流和开路电压；本发明能制备同时实现化学改性和物理改性的摩擦电薄膜，从而得到更高的表面摩擦电荷密度以获得更高效的摩擦纳米发电机。 【EN】The invention provides a self-powered touch sensing friction nano generator and a preparation method thereof, wherein the self-powered touch sensing friction nano generator comprises a lower substrate, a lower electrode, a friction medium layer, an upper electrode and an upper substrate, wherein the lower electrode is arranged on the lower substrate; the friction medium layer is arranged on the lower electrode; the upper electrode is arranged on the upper substrate, and the friction medium layer is a double-network film; the friction medium layer and the upper electrode of the nano generator in the initial state are separated, when the nano generator is subjected to pre-pressure and enters a working state, the double-network film and the upper substrate are rubbed to enable the surfaces of the double-network film and the upper substrate to accumulate charges and form a balance potential between the upper electrode and the lower electrode; when the pressure on the nano generator changes due to touch, the space between the upper electrode and the lower electrode changes, so that the potential balance state cannot be maintained, and signal current and open-circuit voltage between the upper electrode and the lower electrode are formed; the invention can prepare the triboelectric film which simultaneously realizes chemical modification and physical modification, thereby obtaining higher surface friction charge density to obtain a more efficient triboelectric nano-generator.

摘要：【中文】本发明涉及一种调节金属氧化物突触晶体管突触可塑性的方法，所述金属氧化物突触晶体管为底栅顶接触结构，包括由下至上依次设置的基底、绝缘层、有源层以及源漏电极，在制备完成所述金属氧化物突触晶体管的绝缘层后，对其进行激光照射处理，通过调节激光照射参数调节金属氧化物突触晶体管的突触响应特性。该方法有利于快速、便捷、低温地调节突触晶体管的突触可塑性。 【EN】The invention relates to a method for adjusting synapse plasticity of a metal oxide synapse transistor, wherein the metal oxide synapse transistor is of a bottom-gate-top contact structure and comprises a substrate, an insulating layer, an active layer and a source drain electrode which are sequentially arranged from bottom to top, after the insulating layer of the metal oxide synapse transistor is prepared, laser irradiation processing is carried out on the insulating layer, and synapse response characteristics of the metal oxide synapse transistor are adjusted by adjusting laser irradiation parameters. The method is beneficial to quickly, conveniently and cryogenically regulating the synaptic plasticity of the synaptic transistor.