摘要：【中文】一种氮化镓器件的外延结构，属于微电子技术领域，包括衬底、低温成核层、缓冲层、高阻层、沟道层以及势垒层，其中，缓冲层是由GaN1/SiN/GaN2循环生长组成，包括GaN1晶核层、网状结构SiN薄层、GaN2填平层，主要通过控制这三子层生长环境中的NH3总量来控制其生长模式的不同，本发明通过循环生长GaN1/SiN/GaN2缓冲层可以大幅度降低材料的位错密度，提高晶格质量，从而提升HEMT器件的电子迁移率、击穿电压以及漏电流等特性。 【EN】An epitaxial structure of a gallium nitride device belongs to the technical field of microelectronics, and comprises a substrate, a low-temperature nucleating layer, a buffer layer, a high-resistance layer, a channel layer and a barrier layer, wherein the buffer layer is formed by circularly growing GaN1/SiN/GaN2 and comprises a GaN1 crystal nucleus layer, a net-shaped SiN thin layer and a GaN2 filling layer, and the difference of the growth modes of the three layers is mainly controlled by controlling the total amount of NH3 in the growing environment of the three layers.

摘要：【中文】一种新型的HEMT器件的外延结构，属于微电子技术领域，包括从下至上依次层叠设置的衬底、成核层、低温三维层、填平层、高阻层、沟道层以及势垒层，其中填平层是由H2处理层/MgGaN/GaN2循环生长组成，包括H2处理层、MgGaN的二维层、GaN恢复层，本发明通过循环生长H2处理层/MgGaN/GaN填平层可以大幅度降低材料的位错密度，提高晶格质量，从而提升HEMT器件的电子迁移率、击穿电压以及漏电流等特性。 【EN】The invention discloses a novel epitaxial structure of a HEMT device, which belongs to the technical field of microelectronics, and comprises a substrate, a nucleation layer, a low-temperature three-dimensional layer, a filling layer, a high-resistance layer, a channel layer and a barrier layer which are sequentially stacked from bottom to top, wherein the filling layer is formed by circularly growing an H2 processing layer/MgGaN/GaN 2 and comprises an H2 processing layer, a MgGaN two-dimensional layer and a GaN recovery layer.

摘要：【中文】一种Si基GaN外延低位错薄膜，属于微电子技术领域，包括从下至上依次层叠设置的硅衬底、AlN成核层、AlGaN缓冲层、低温GaN位错阻隔层、GaN沟道层、AlGaN势垒层及GaN盖帽层，本发明利用低温GaN位错阻隔层能够有效降低氮化镓外延层中的位错密度，同时有效控制外延薄膜中的应力，得到Si衬底上无裂纹、低翘曲度的高质量AlGaN/GaN异质结外延材料。 【EN】The invention discloses a Si-based GaN epitaxial low-dislocation film, which belongs to the technical field of microelectronics, and comprises a silicon substrate, an AlN nucleating layer, an AlGaN buffer layer, a low-temperature GaN dislocation blocking layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer which are sequentially stacked from bottom to top.

摘要：【中文】一种Si基氮化镓器件的外延结构，属于微电子技术领域，包括从下至上依次层叠设置的衬底、成核层、缓冲层、高阻层、沟道层以及势垒层，其中，成核层是由ALN/GaN循环生长组成，缓冲层是由InN/SiN/GaN循环生长组成，包括InN晶核层、网状结构SiN薄层、GaN填平层，本发明通过循环生长ALN/GaN成核层主要作用是缓解衬底与外延层的晶格失配和热失配，InN/SiN/GaN缓冲层可以大幅度降低材料的位错密度，提高晶格质量，从而提升HEMT器件的电子迁移率、击穿电压以及漏电流等特性。 【EN】An epitaxial structure of a Si-based gallium nitride device belongs to the technical field of microelectronics, and comprises a substrate, a nucleation layer, a buffer layer, a high-resistance layer, a channel layer and a barrier layer which are sequentially stacked from bottom to top, wherein the nucleation layer is formed by ALN/GaN cyclic growth, the buffer layer is formed by InN/SiN/GaN cyclic growth and comprises an InN nucleation layer, a net-shaped SiN thin layer and a GaN filling layer.

摘要：【中文】一种高质量的HEMT器件外延结构，属于微电子技术领域，包括从下至上依次层叠设置的衬底、成核层、缓冲层、高阻层、沟道层以及势垒层，其中，成核层是由PECVD生长的ALN层，其他层的都由MOCVD生长完成，主要的缓冲层是由ALN/SiN/GaN三个子层的复合循环生长组成，包括ALN晶核层、网状结构SiN薄层、GaN填平层，本发明通过PECVD的方法生长高晶格质量的ALN成核层，为后面的缓冲层做承接作用，再通过循环生长ALN/SiN/GaN缓冲层可以大幅度降低材料的位错密度，提高晶格质量，从而提升HEMT器件的电子迁移率、击穿电压以及漏电流等特性。 【EN】A high-quality HEMT device epitaxial structure belongs to the technical field of microelectronics, and comprises a substrate, a nucleation layer, a buffer layer, a high-resistance layer, a channel layer and a barrier layer which are sequentially stacked from bottom to top, wherein the nucleation layer is an ALN layer grown by PECVD, other layers are grown by MOCVD, and a main buffer layer is formed by composite cyclic growth of three sublayers of ALN/SiN/GaN and comprises an ALN nucleation layer, a net-shaped SiN thin layer and a GaN filling layer.

摘要：【中文】本发明涉及一种煤矿日常防突报告单防伪鉴真方法，属于煤矿安全领域。该方法首先利用具备上传功能的瓦斯参数测定仪及专用管理软件，自动管理日常防突报告单中的瓦斯突出参数并进行加密存储；然后通过专用软件，在生成及输出的日常防突报告单中的添加防伪二维码和防伪水印；再后在查阅报告单过程中，通过专用软件和设备，扫描、解码报告单中的二维码摘要信息，并自动检索、匹配到数据库中对应报告单；最后，通过专用软件的文字识别仪器和技术，依次识别、核对输出的报告单中所记录的瓦斯突出参数，比较其一致性，给出防伪鉴真结论。通过该方法，可有效保障日常防突的按要求严格执行、如实填报防突信息报告单，以全面、准确反映工作面突出危险情况。 【EN】The invention relates to an anti-counterfeiting and authenticity identifying method for a daily outburst prevention report sheet of a coal mine, and belongs to the field of coal mine safety. The method comprises the steps that firstly, a gas parameter measuring instrument with an uploading function and special management software are used for automatically managing gas outburst parameters in a daily outburst prevention report and carrying out encryption storage; then adding anti-counterfeiting two-dimensional codes and anti-counterfeiting watermarks in the generated and output daily outburst prevention report through special software; then, in the process of looking up the report form, scanning and decoding the two-dimension code abstract information in the report form through special software and equipment, and automatically retrieving and matching the two-dimension code abstract information to a corresponding report form in a database; finally, the gas outburst parameters recorded in the output report are sequentially identified and checked through a character identification instrument and technology of special software, the consistency of the gas outburst parameters is compared, and an anti-counterfeiting authentication conclusion is given. By the method, the daily strict implementation of outburst prevention according to requirements can be effectively guaranteed, and the outburst prevention information report can be filled in faithfully, so that the outburst danger condition of the working face can be comprehensively and accurately reflected.

摘要：【中文】本申请提供一种基于数据驱动的通风系统态势动态评价方法具体包括以下步骤：S1：确定可靠性评价方法的评价指标，所述评价指标包括一级可靠性评价指标、二级可靠性评价指标和三级可靠性评价指标；S2：采集目标煤矿井下监控系统的监控数据，并根据所述监控数据更新所述一级可靠性评价指标中的动态指标的指标值；S3：对所述一级可靠性评价指标进行可靠性进行评价，获得所述一级可靠性评价指标的可靠性等级；S3：从一级可靠性评价指标到目标矿井通风系统的可靠性等级逐级评价；S4：根据当前已有的通风系统可靠性评价结果，利用三次平滑算法预测未来某个时刻的通风系统的可靠性。通过煤矿井下实时动态数据更新可靠性评价指标，动态评价提升评价结果的精确性。 【EN】The application provides a ventilation system situation dynamic evaluation method based on data driving, which specifically comprises the following steps: s1: determining evaluation indexes of a reliability evaluation method, wherein the evaluation indexes comprise a primary reliability evaluation index, a secondary reliability evaluation index and a tertiary reliability evaluation index; s2: collecting monitoring data of a target coal mine underground monitoring system, and updating index values of dynamic indexes in the primary reliability evaluation indexes according to the monitoring data; s3: evaluating the reliability of the primary reliability evaluation index to obtain the reliability grade of the primary reliability evaluation index; s3: evaluating the reliability grade of the target mine ventilation system step by step from the first-stage reliability evaluation index; s4: and predicting the reliability of the ventilation system at a certain future moment by utilizing a cubic smoothing algorithm according to the current reliability evaluation result of the existing ventilation system. And updating reliability evaluation indexes through real-time dynamic data under the coal mine, and dynamically evaluating to improve the accuracy of evaluation results.