摘要：【中文】本发明涉及一种硼氮共掺杂碳量子点，是以邻苯二胺为碳源和氮源，硼酸为硼源掺杂剂，溶于水中进行微波辅助水热反应，反应产物提纯后得到的硼氮共掺杂碳量子点固体粉末。本发明制备硼氮共掺杂碳量子点粒径小于10nm，能够在激发下发射560nm的长波长黄色荧光，荧光量子产率高，具有激发独立性、低毒性和良好的生物相容性，可以作为荧光探针应用于细胞成像中。 【EN】The invention relates to a boron-nitrogen co-doped carbon quantum dot, which is solid powder of the boron-nitrogen co-doped carbon quantum dot obtained by dissolving o-phenylenediamine as a carbon source and a nitrogen source and boric acid as a boron source dopant in water to perform microwave-assisted hydrothermal reaction and purifying a reaction product. The particle size of the boron-nitrogen co-doped carbon quantum dot prepared by the method is less than 10nm, the boron-nitrogen co-doped carbon quantum dot can emit 560nm long-wavelength yellow fluorescence under excitation, the fluorescence quantum yield is high, the excitation independence, the low toxicity and the good biocompatibility are realized, and the boron-nitrogen co-doped carbon quantum dot can be used as a fluorescence probe to be applied to cell imaging.

摘要：【中文】本发明提供一种二维水平同质结、自驱动逻辑光电开关及其制备方法，属于半导体光电技术领域。本发明所述光电开关包括二维二硒化钨、硅/二氧化硅绝缘衬底、氮化硼、铟金属n型掺杂源层、金金属p型掺杂源层。本发明利用金电极对二维二硒化钨产生p型掺杂，铟电极对二维二硒化钨产生n型掺杂，构筑了二维二硒化钨水平p‑n同质结。氮化硼和绝缘硅作为栅介质层，硅作为栅电极。二维二硒化钨材料作为光敏材料，在光照下产生光生电子空穴对，对硅衬底施加栅极电压调控同质结整流方向，从而控制光生电子空穴流动方向，起到逻辑光电开关的作用。 【EN】The invention provides a two-dimensional horizontal homojunction self-driven logic photoelectric switch and a preparation method thereof, belonging to the technical field of semiconductor photoelectricity. The photoelectric switch comprises two-dimensional tungsten diselenide, a silicon/silicon dioxide insulating substrate, boron nitride, an indium metal n-type doping source layer and a gold metal p-type doping source layer. According to the invention, the gold electrode is used for generating p-type doping on the two-dimensional tungsten diselenide, the indium electrode is used for generating n-type doping on the two-dimensional tungsten diselenide, and a horizontal p-n homojunction of the two-dimensional tungsten diselenide is constructed. Boron nitride and insulating silicon are used as gate dielectric layers, and silicon is used as a gate electrode. The two-dimensional tungsten diselenide material is used as a photosensitive material, a photo-generated electron-hole pair is generated under illumination, and grid voltage is applied to the silicon substrate to regulate and control the homojunction rectification direction, so that the flow direction of the photo-generated electron-hole is controlled, and the effect of a logic photoelectric switch is achieved.