当前查询到5条专利与查询词 "Fan Xuanming"相关,搜索用时0.6094182秒!排序方式:
发明专利:4实用新型: 1外观设计: 0
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申请号:201911306771.2 公开号:CN110923667A 主分类号:C23C16/40
申请人:【中文】北京工业大学【EN】Beijing University of Technology 申请日:2019.12.18 公开日:2020.03.27
摘要:【中文】一种次级电子发射薄膜材料的高效简易制备方法,属于薄膜材料的制备技术领域。以表面光滑平整的硅片、银片、FTO玻璃为基底材料,以乙酸镁和乙酸锌作为主要前驱体物,氮气作为载气,在对基底加热的条件下,通过气凝胶化学气相沉积结合高温退火,制备获得MgO/MgO‑ZnO薄膜。采用本发明方法制备次级发射薄膜材料具有制备工艺简单、成本低、掺杂元素和膜厚可控、成分均匀、次级发射系数高、耐电子轰击且发射性能稳定等优点。有望应用于多种光电倍增管、图像增加器、等离子显示器等器件中。 【EN】A high-efficiency simple preparation method of a secondary electron emission thin film material belongs to the technical field of thin film material preparation. The preparation method comprises the steps of taking a silicon wafer, a silver sheet and FTO glass with smooth and flat surfaces as substrate materials, taking magnesium acetate and zinc acetate as main precursor substances, taking nitrogen as carrier gas, and preparing the MgO/MgO-ZnO film by combining aerogel chemical vapor deposition with high-temperature annealing under the condition of heating the substrate. The method for preparing the secondary emission thin film material has the advantages of simple preparation process, low cost, controllable doping elements and film thickness, uniform components, high secondary emission coefficient, electron bombardment resistance, stable emission performance and the like. Is expected to be applied to various devices such as photomultiplier tubes, image intensifiers and plasma displays.
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申请号:202010006398.5 公开号:CN111036914A 主分类号:B22F3/11
申请人:【中文】北京工业大学【EN】Beijing University of Technology 申请日:2020.01.03 公开日:2020.04.21
摘要:【中文】一种钨基扩散阴极的增材制造制备方法,属于热阴极电子发射材料的制备技术领域,采用可三维立体成型的激光选区熔化(SLM)技术制备了阴极多孔钨基,并对激光能量与多孔钨基致密度的关系进行了研究。研究结果表明采用激光功率P=160W,扫描速度V=1600mm/s,扫描间距D=0.10mm的制备工艺能够获得相对密度为65.7%的阴极基体,且能够满足阴极后续制备加工的需求,其活性盐浸渍量达13%。对该阴极发射性能进行测试,结果显示该阴极发射性能能够达到传统钡钨阴极材料的发射性能。 【EN】A material increase manufacturing method of a tungsten-based diffusion cathode belongs to the technical field of preparation of hot cathode electron emission materials, a cathode porous tungsten base is prepared by adopting a Selective Laser Melting (SLM) technology capable of three-dimensional forming, and the relation between laser energy and the density of the porous tungsten base is researched. The research result shows that the cathode matrix with the relative density of 65.7 percent can be obtained by adopting the preparation process with the laser power P of 160W, the scanning speed V of 1600mm/s and the scanning distance D of 0.10mm, the requirements of subsequent preparation and processing of the cathode can be met, and the impregnation amount of the active salt reaches 13 percent. The emission performance of the cathode is tested, and the result shows that the emission performance of the cathode can reach the emission performance of the traditional barium-tungsten cathode material.
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申请号:201911307889.7 公开号:CN110904410A 主分类号:C23C14/24
申请人:【中文】北京工业大学【EN】Beijing University of Technology 申请日:2019.12.17 公开日:2020.03.24
摘要:【中文】一种制备具有高次级发射性能的氧化镁基薄膜的设备和方法,该设备包括热蒸镀真空室以及安装在真空室内的热蒸镀源物质、钨舟和基底材料,还包括真空管式炉以及配套的气体流量控制器、微调针型阀和氧气。经过热蒸镀在基底材料表面沉积金属或合金薄膜,之后在真空管式炉中通以微量氧气,维持管内真空在5~100Pa,温度400~650℃,进行热活化处理,从而获得次级发射系数高且发射稳定的氧化镁基薄膜,薄膜厚度约为100nm~1μm。此方法工艺简单,薄膜结构、成分可调,次级发射性能稳定,不需要使用昂贵的离子源或电子枪,有望开发应用于光电倍管、图像增强器、等离子平板显示器等领域。 【EN】An apparatus and method for preparing magnesium oxide-based thin film with high secondary emission performance comprises a thermal evaporation vacuum chamber, a thermal evaporation source material, a tungsten boat and a substrate material, which are arranged in the vacuum chamber, a vacuum tube furnace, and a gas flow controller, a fine tuning needle valve and oxygen which are matched with the vacuum tube furnace. Depositing a metal or alloy film on the surface of a substrate material through thermal evaporation, introducing a trace amount of oxygen into a vacuum tube furnace, maintaining the vacuum in the tube at 5-100 Pa and the temperature of 400-650 ℃, and performing thermal activation treatment, thereby obtaining the magnesium oxide-based film with high secondary emission coefficient and stable emission, wherein the thickness of the film is about 100 nm-1 mu m. The method has simple process, adjustable film structure and components and stable secondary emission performance, does not need expensive ion sources or electron guns, and is expected to be developed and applied to the fields of photoelectric double tubes, image intensifiers, plasma flat-panel displays and the like.
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申请号:201911022256.1 公开号:CN110933031A 主分类号:H04L29/06
摘要:【中文】本发明公开了一种基于LSTM的智能电网配电终端单元入侵检测方法,属于智能电网信息安全技术领域。本发明通过对正常程序的CPU功耗进行采集,特征提取并训练出一个预测模型;在攻击检测阶段,采集实时运行的DTU功耗数据得到当前t时刻的实际功耗特征;设定样本窗口,采集t时刻之前的n个样本,得到当前t时刻的理论预测功耗特征,计算实际功耗特征与理论预测功耗特征之间的欧氏距离,判断是否遭到攻击。本发明解决了配电终端单元无法安装入侵检测软件的问题;采用LSTM神经网络提高了检测精度,能够更好的捕捉系统功耗的正常变化;解决了电网环境电磁噪声大,传统的边信道异常检测方法面临着精度低的问题。 【EN】The invention discloses an LSTM-based intrusion detection method for a power distribution terminal unit of a smart power grid, and belongs to the technical field of information security of the smart power grid. The method comprises the steps of collecting the CPU power consumption of a normal program, extracting characteristics and training a prediction model; in an attack detection stage, collecting DTU power consumption data running in real time to obtain the actual power consumption characteristics at the current t moment; setting a sample window, collecting n samples before t time to obtain theoretical prediction power consumption characteristics of the current t time, calculating Euclidean distance between actual power consumption characteristics and the theoretical prediction power consumption characteristics, and judging whether the attack is suffered. The invention solves the problem that the power distribution terminal unit can not install the intrusion detection software; the LSTM neural network is adopted to improve the detection precision, and the normal change of the system power consumption can be better captured; the method solves the problems that the electromagnetic noise of the power grid environment is large, and the traditional side channel abnormity detection method faces low precision.
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