摘要：【中文】本发明公开了一种基于图像进行用户登陆的验证方法，对传统登陆识别认证方法进行了拓展，从原本的单一、固定、不变的字符密码，增加了图片识别、随机变化，提高了用户登陆时被偷窥后依然能够保障自己的密码、账户、信息的安全。在使用个人密码进行登陆验证的前提下，提出了能够减少用户受到密码攻击的登陆方法，从而达到减少隐私泄露概率，保障个人财产安全。 【EN】The invention discloses a verification method for user login based on an image, which expands the traditional login identification authentication method, increases image identification and random change from the original single, fixed and unchangeable character password, and improves the safety of the password, account and information of a user still ensured after the user is peeped during login. On the premise of using the personal password to carry out login verification, a login method capable of reducing password attack on a user is provided, so that privacy disclosure probability is reduced, and personal property safety is guaranteed.

摘要：【中文】披露了一种半导体结构的形成方法。该方法包括提供第一导电特征部件，该第一导电特征部件具有形成于其上的介电层。开口形成于介电层中以露出第一导电特征部件的部分。第一阻障层形成于第一导电特征部件之上以及介电层的顶表面之上。第二阻障层形成于第一阻障层之上以及开口的侧壁上。第二阻障层被移除，而第一阻障层的至少一部分设置于第一导电特征部件之上。第二导电特征部件形成于第一阻障层的上述部分之上。第二导电特征部件的侧壁直接接触介电层。 【EN】A method of forming a semiconductor structure is disclosed. The method includes providing a first conductive feature having a dielectric layer formed thereon. An opening is formed in the dielectric layer to expose a portion of the first conductive feature. A first barrier layer is formed over the first conductive feature and over a top surface of the dielectric layer. The second barrier layer is formed on the first barrier layer and on the sidewall of the opening. The second barrier layer is removed and at least a portion of the first barrier layer is disposed over the first conductive feature. A second conductive feature is formed over the portion of the first barrier layer. The sidewalls of the second conductive feature directly contact the dielectric layer.

摘要：【中文】一种栅极结构的形成方法，其包括：形成沟槽于半导体基板上的层间介电层中，且沟槽露出半导体基板的上表面；形成界面层于沟槽的底部；形成介电层于沟槽中；形成功函数金属层于介电层上；原位形成氮化物层于沟槽中的功函数金属层上；进行钴的第一沉积工艺，以形成钴层于沟槽中；进行钴的第二沉积工艺，以增加沟槽中的钴层的厚度；以及进行电化学镀工艺以将钴填入沟槽。 【EN】A method for forming a gate structure, comprising: forming a trench in the interlayer dielectric layer on the semiconductor substrate, wherein the trench exposes the upper surface of the semiconductor substrate; forming an interface layer at the bottom of the groove; forming a dielectric layer in the trench; forming a work function metal layer on the dielectric layer; forming a nitride layer in situ on the work function metal layer in the trench; performing a first deposition process of cobalt to form a cobalt layer in the trench; performing a second deposition process of cobalt to increase the thickness of the cobalt layer in the trench; and performing an electrochemical plating process to fill the cobalt into the trench.

摘要：【中文】提供一种半导体装置及其形成方法。在一实施例中，此半导体装置包含：半导体基板、多个通道区，这些通道区包含：第一、第二与第三p型通道区，以及第一、第二与第三n型通道区，以及多个栅极结构。这些栅极结构包含：界面层(IL)设置于这些通道区之上，第一高介电常数介电层(HK)设置于此第一p型通道区及此第一n型通道区之上，第二高介电常数介电层设置于此第一n型通道区、此第二n型通道区、此第一p型通道区及此第二p型通道区之上；以及第三高介电常数介电层设置于这些通道区之上。此第一、第二及第三高介电常数介电层彼此不同。 【EN】A semiconductor device and a method of forming the same are provided. In one embodiment, the semiconductor device comprises: a semiconductor substrate, a plurality of channel regions, the channel regions comprising: first, second and third p-type channel regions, and first, second and third n-type channel regions, and a plurality of gate structures. These gate structures include: an Interfacial Layer (IL) disposed over the channel regions, a first high-K dielectric layer (HK) disposed over the first p-type channel region and the first n-type channel region, and a second high-K dielectric layer disposed over the first n-type channel region, the second n-type channel region, the first p-type channel region, and the second p-type channel region; and a third high-k dielectric layer disposed over the channel regions. The first, second and third high-k dielectric layers are different from each other.

摘要：【中文】一种制造半导体装置的方法，包括：移除虚拟栅极结构，以在半导体层上形成栅极沟槽、在界面层上形成高k值栅极介电层，其中界面层曝露于栅极沟槽中、在高k值栅极介电层上沉积含金属前驱物以形成含金属层、以及随后在含金属层上沉积含铝前驱物，其中含铝前驱物的沉积在高k值栅极介电层与界面层之间的一界面处形成氧化铝层，且含金属前驱物包括不同于铝的金属。上述方法还包括在沉积含铝前驱物后，移除含金属层的一部分、在含金属层的剩余部分上沉积功函数金属层、以及在功函数金属层上形成体导电层，进而形成金属栅极结构。 【EN】A method of manufacturing a semiconductor device, comprising: the dummy gate structure is removed to form a gate trench on the semiconductor layer, a high-k gate dielectric layer on the interface layer, wherein the interface layer is exposed in the gate trench, a metal-containing precursor is deposited on the high-k gate dielectric layer to form a metal-containing layer, and then an aluminum-containing precursor is deposited on the metal-containing layer, wherein the deposition of the aluminum-containing precursor forms an aluminum oxide layer at an interface between the high-k gate dielectric layer and the interface layer, and the metal-containing precursor comprises a metal other than aluminum. The method further includes removing a portion of the metal-containing layer after depositing the aluminum-containing precursor, depositing a work function metal layer over a remaining portion of the metal-containing layer, and forming a bulk conductive layer over the work function metal layer to form a metal gate structure.

摘要：【中文】本公开涉及一种半导体结构及其形成方法。本公开实施例提供一种半导体装置的形成方法，包括：形成含铪层于半导体层上，同时对此含铪层执行热退火制程及施加电场以形成铁电含铪层，以及形成栅极电极于此铁电含铪层之上。 【EN】The present disclosure relates to a semiconductor structure and a method of forming the same. The embodiment of the disclosure provides a method for forming a semiconductor device, which includes: a method of forming a hafnium containing layer on a semiconductor layer, simultaneously performing a thermal annealing process and applying an electric field to the hafnium containing layer to form a ferroelectric hafnium containing layer, and forming a gate electrode on the ferroelectric hafnium containing layer.

摘要：【中文】本发明的实施例提供一种形成集成电路器件的方法的示例，其中，所述集成电路器件具有设置在沟道区和栅极介电质之间界面层。在一些示例中，所述方法包括接收具有衬底和鳍的工件，所述鳍具有设置在所述衬底上的沟道区。界面层形成在所述鳍的沟道区上，且栅极介电层形成在所述界面层上。第一覆盖层形成在所述栅极介电层上，且第二覆盖层形成在所述第一覆盖层上。在所述工件上执行退火工艺，所述退火工艺被配置为使第一材料从所述第一覆盖层扩散到所述栅极介电层中。可在制造工具的同一腔室中执行所述第一覆盖层和第二覆盖层的形成和退火工艺。本发明的实施例还提供了具有界面层的栅极结构和集成电路的制造方法。 【EN】Embodiments of the present invention provide an example of a method of forming an integrated circuit device having an interfacial layer disposed between a channel region and a gate dielectric. In some examples, the method includes receiving a workpiece having a substrate and a fin having a channel region disposed on the substrate. An interface layer is formed on the channel region of the fin, and a gate dielectric layer is formed on the interface layer. A first capping layer is formed on the gate dielectric layer and a second capping layer is formed on the first capping layer. Performing an annealing process on the workpiece, the annealing process configured to diffuse a first material from the first capping layer into the gate dielectric layer. The first and second cap layer forming and annealing processes may be performed in the same chamber of a fabrication tool. Embodiments of the invention also provide methods of fabricating gate structures and integrated circuits having interfacial layers.

摘要：【中文】一种半导体配置的形成方法，包括形成鳍片。执行扩散制程将第一掺质扩散至鳍片的通道区中。在第一掺质扩散至鳍片的通道区中之后，形成第一栅极电极于鳍片的通道区上。 【EN】A method of forming a semiconductor arrangement includes forming a fin. A diffusion process is performed to diffuse the first dopant into the channel region of the fin. After the first dopant is diffused into the channel region of the fin, a first gate electrode is formed on the channel region of the fin.

摘要：【中文】本发明提出一种可自动调节松紧度的线驱灵巧手用张紧器，属于机器人技术领域。张紧器包括安装支座、调节弹簧、直线导轨、沿直线导轨滑动的滑块、两个滑轮组、与各滑轮组配套设置的腱绳和连杆、以及腱绳缠绕轴；安装支座包括安装主体、两侧盖板、连接件和电机连接件，安装主体顶部设有调节压板；两个滑轮组及其配套的腱绳和连杆对称设置在安装主体的前后两侧，各滑轮组均分别由两个定滑轮和两个动滑轮组成，第一动滑轮随滑块移动，第二动滑轮位于连杆底部，该连杆中部与调节弹簧相连，两个定滑轮依次位于直线导轨的下方；通过控制调节压板上螺栓的预紧力改变第二动滑轮的位置，对各腱绳有张紧作用，通过调节弹簧带动连杆运动实现对腱绳的自动预紧。 【EN】The invention provides a wire-drive flexible manual tensioner capable of automatically adjusting tightness, and belongs to the technical field of robots. The tensioner comprises a mounting support, an adjusting spring, a linear guide rail, a sliding block sliding along the linear guide rail, two pulley blocks, a tendon rope and a connecting rod which are matched with the pulley blocks, and a tendon rope winding shaft; the mounting support comprises a mounting main body, two side cover plates, a connecting piece and a motor connecting piece, and an adjusting pressure plate is arranged at the top of the mounting main body; the two pulley blocks and the matched tendon ropes and connecting rods are symmetrically arranged on the front side and the rear side of the mounting main body, each pulley block respectively consists of two fixed pulleys and two movable pulleys, the first movable pulley moves along with the sliding block, the second movable pulley is positioned at the bottom of the connecting rod, the middle part of the connecting rod is connected with an adjusting spring, and the two fixed pulleys are sequentially positioned below the linear guide rail; the position of the second movable pulley is changed by controlling the pretightening force of the bolt on the adjusting pressure plate, so that the tendon ropes are tensioned, and the adjusting spring drives the connecting rod to move to realize automatic pretightening of the tendon ropes.

摘要：【中文】本发明涉及基于区块链技术的数字银行实现方法及系统，包括：获取资金需求方发布的经过审核通过的资金需求项目信息，记录在系统区块链上；获取资金提供方为资金提供方现金账户分配的可供支配投资资金信息，记录在系统区块链上；在可供支配投资资金满足资金需求项目的需求时，为资金需求项目分配资金；向提供资金的各资金提供方用户的债权权益账户发放与债权权益；在资金需求项目到期时，兑付债权权益，现金交易和债权权益转移信息均记录在系统区块链上。本发明为资金提供方提供可靠、稳健的投资渠道和风险监管平台，为资金需求方提供低成本资金，降低商业资金成本、金融风险和资本管理风险，打造符合现代行业发展的数字银行系统，促进实业发展。 【EN】The invention relates to a method and a system for realizing a digital bank based on a block chain technology, comprising the following steps: acquiring approved fund demand project information issued by a fund demand party, and recording the approved fund demand project information on a system block chain; acquiring available investment fund information allocated by a fund provider for a cash account of the fund provider, and recording the available investment fund information on a system block chain; when the available investment funds meet the requirements of the fund demand items, allocating funds for the fund demand items; issuing and crediting creditor equity to creditor equity accounts of funding provider users; when the fund demand item expires, the cash transaction and the transfer information of the bond equity are recorded on the system block chain. The invention provides a reliable and steady investment channel and a risk supervision platform for a fund provider, provides low-cost fund for a fund demander, reduces the cost of commercial fund, financial risk and capital management risk, builds a digital bank system which accords with the development of the modern industry, and promotes the development of the actual industry.