摘要：【中文】本发明属半导体技术领域，具体涉及一种单片集成型平衡光电探测器芯片，所述芯片包括两个并行的光电探测器单元串联集成，光电探测器单元为正入光、台面型双异质PIN结构；光电探测器单元采用半绝缘衬底，半绝缘衬底上沉积有半导体材料结构外延层；芯片的台面上设置有P电极、N电极以及信号输出端，且P电极、N电极和信号输出端为同面引出；其中，P电极通过从P+区域的接触环电极引出，并经过台面延伸到半绝缘衬底表面；N电极从N+区域的半导体接触层引出到半绝缘衬底表面；信号输出端由两个探测器单元的串联连接处引出；本发明将两个并行InGaAs光电探测器串联单片集成，降低了单元间的间距和寄生参数，实现了高速率和集成化。 【EN】The invention belongs to the technical field of semiconductors, and particularly relates to a monolithic integrated balanced photoelectric detector chip which comprises two parallel photoelectric detector units which are integrated in series, wherein the photoelectric detector units are of a positive incidence light and mesa type double-heterogeneous PIN structure; the photoelectric detector unit adopts a semi-insulating substrate, and a semiconductor material structure epitaxial layer is deposited on the semi-insulating substrate; a P electrode, an N electrode and a signal output end are arranged on the table top of the chip, and the P electrode, the N electrode and the signal output end are led out from the same plane; the P electrode is led out from the contact ring electrode of the P + region and extends to the surface of the semi-insulating substrate through the table top; the N electrode is led out from the semiconductor contact layer of the N + region to the surface of the semi-insulating substrate; the signal output end is led out from the serial connection position of the two detector units; the invention integrates two parallel InGaAs photodetectors in series and a single chip, reduces the space between units and parasitic parameters, and realizes high speed and integration.

摘要：【中文】本发明公开了一种多通道集成制冷单光子雪崩光电二极管器件，包括壳体,所述壳体的内部设有空腔，所述空腔内设有热电制冷器和陶瓷基板，所述陶瓷基板上固定连接有温敏电阻和至少两个雪崩光电二极管芯片，所述空腔一侧的腔壁上插设有至少两组光纤组件，所述光纤组件插入端的端头分别与对应的雪崩光电二极管芯片的光敏面正对耦合。本发明通过在一个壳体内集成多个雪崩光电二极管芯片，每个芯片均能独立检测一路单光子信号，使用一个单光子雪崩光电二极管器件就能实现对多路信号的检测，使用方便；而且多个雪崩光电二极管芯片共用一个热电制冷器，可明显降低单光子雪崩光电二极管器件的体积、成本以及功耗。 【EN】The invention discloses a multi-channel integrated refrigeration single photon avalanche photodiode device which comprises a shell, wherein a cavity is arranged in the shell, a thermoelectric refrigerator and a ceramic substrate are arranged in the cavity, a temperature-sensitive resistor and at least two avalanche photodiode chips are fixedly connected to the ceramic substrate, at least two groups of optical fiber assemblies are inserted into the cavity wall on one side of the cavity, and the ends of the insertion ends of the optical fiber assemblies are respectively coupled with the photosensitive surfaces of the corresponding avalanche photodiode chips in a facing manner. According to the invention, a plurality of avalanche photodiode chips are integrated in a shell, each chip can independently detect one path of single photon signal, and the detection of multiple paths of signals can be realized by using one single photon avalanche photodiode device, so that the use is convenient; and a plurality of avalanche photodiode chips share one thermoelectric refrigerator, so that the size, the cost and the power consumption of the single photon avalanche photodiode device can be obviously reduced.

摘要：【中文】本发明属于半导体光电探测器领域，具体涉及一种抗辐照近红外焦平面探测器及制作方法；所述探测器包括探测器阵列芯片和CMOS读出电路；所述探测器阵列芯片通过铟柱连接CMOS读出电路；所述探测器阵列芯片的像元区由中心向四周依次为有效像元、哑元和冗余像元构成；本发明借助金属遮罩层对哑元进行遮挡，使得哑元不输出光生信号；利用哑元提供补偿电流，分流有效像元在辐照之后上升的暗电流；本发明结构简单，考虑工艺制作的可行性，能够有效解决近红外焦平面探测器在空间辐照环境中性能参数退化的问题。 【EN】The invention belongs to the field of semiconductor photoelectric detectors, and particularly relates to an anti-irradiation near-infrared focal plane detector and a manufacturing method thereof; the detector comprises a detector array chip and a CMOS readout circuit; the detector array chip is connected with the CMOS reading circuit through the indium columns; the pixel area of the detector array chip is composed of an effective pixel, a dummy pixel and a redundant pixel from the center to the periphery in sequence; the dummy is shielded by the metal shielding layer, so that the dummy does not output photoproduction signals; a dummy is used for providing compensation current, and dark current rising after irradiation of the effective pixel is shunted; the invention has simple structure, considers the feasibility of process manufacturing, and can effectively solve the problem of performance parameter degradation of the near-infrared focal plane detector in a space irradiation environment.