摘要：【中文】本发明涉及一类高导电导热金属基复合材料的制备方法，将石墨烯和膨化剂添加至有机溶剂中混合并超声预分散，得到分散体，将分散体均匀粘附在金属颗粒上并烘干，然后将金属颗粒投放到熔化的金属液体中，金属颗粒在高温的作用下迅速膨化，不仅使石墨烯有效引入到金属基材料中，且大大提高了石墨烯的分散效果，获得石墨烯与金属基材料之间的高效接触。本发明的高导电导热金属基复合材料的制备方法相较于现有技术可实现金属与石墨烯的优异分散与结合、导电导热性能更好，成本低廉、工艺简单、材料质量更好、更利于大规模生产的优点。 【EN】The invention relates to a preparation method of a high-electric-conductivity heat-conduction metal-based composite material, which comprises the steps of adding graphene and a swelling agent into an organic solvent, mixing and carrying out ultrasonic pre-dispersion to obtain a dispersion, uniformly adhering the dispersion to metal particles, drying, putting the metal particles into molten metal liquid, and rapidly swelling the metal particles under the action of high temperature, so that the graphene is effectively introduced into a metal-based material, the dispersion effect of the graphene is greatly improved, and the efficient contact between the graphene and the metal-based material is obtained. Compared with the prior art, the preparation method of the high-electric-conductivity heat-conduction metal-based composite material has the advantages of capability of realizing excellent dispersion and combination of metal and graphene, better electric and heat conductivity, low cost, simple process, better material quality and contribution to large-scale production.

摘要：【中文】本发明提供了一种正装集成单元二极管芯片，包括第一导电类型电极、第二导电类型电极以及二极管台面结构；二极管台面结构包括n个二极管单元，n≥2，n个二极管单元的第一导电类型层、量子阱有源区、第二导电类型层和透明电极依次层叠设置并形成一台阶结构，第二导电类型电极部分覆盖透明电极远离第二导电类型层的一侧，绝缘介质层覆盖于台阶结构所外露的第一导电类型层上，并沿台阶结构的侧壁延伸到第二导电类型层和透明电极之间，并部分覆盖第二导电类型层，以作为第二导电类型电极与第二导电类型层之间的电流阻挡层。本发明提高了单位面积单元二极管芯片的流明输出，降低了流明成本。 【EN】The invention provides a forward integrated unit diode chip, which comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure; the diode mesa structure comprises n diode units, wherein n is larger than or equal to 2, a first conduction type layer, a quantum well active region, a second conduction type layer and a transparent electrode of the n diode units are sequentially stacked to form a step structure, the second conduction type electrode partially covers one side, far away from the second conduction type layer, of the transparent electrode, an insulating medium layer covers the first conduction type layer exposed out of the step structure, extends to a position between the second conduction type layer and the transparent electrode along the side wall of the step structure, and partially covers the second conduction type layer to serve as a current blocking layer between the second conduction type electrode and the second conduction type layer. The invention improves the lumen output of the unit area diode chip and reduces the lumen cost.

摘要：【中文】本发明提供一种正装集成单元二极管芯片，包括第一导电类型焊盘、第二导电类型焊盘以及二极管台面结构，第一导电类型焊盘和第二导电类型焊盘沿x轴方向间隔设置，二极管台面结构包括多个二极管单元，二极管单元沿y轴方向的宽度在y轴方向上从正装集成单元二极管芯片的中间往两边逐渐变小。本发明通过不均匀的台面结构设计，获得超均匀的电流分布，热分布，波长分布，以及窄半高的高质量LED光源，解决了现有技术存在的二极管结构在流明效率、流明密度输出、流明成本三个重要的参数上极大局限性的技术问题，提高了单位面积芯片的流明输出，降低了流明成本。 【EN】The invention provides a forward integrated unit diode chip which comprises a first conduction type bonding pad, a second conduction type bonding pad and a diode mesa structure, wherein the first conduction type bonding pad and the second conduction type bonding pad are arranged at intervals along the direction of an x axis, the diode mesa structure comprises a plurality of diode units, and the width of each diode unit along the direction of a y axis is gradually reduced from the middle to two sides of the forward integrated unit diode chip along the direction of the y axis. According to the invention, through the design of the uneven mesa structure, the high-quality LED light source with ultra-even current distribution, heat distribution, wavelength distribution and narrow and half-high is obtained, the technical problem that the diode structure in the prior art is greatly limited in three important parameters of lumen efficiency, lumen density output and lumen cost is solved, the lumen output of a chip in unit area is improved, and the lumen cost is reduced.

摘要：【中文】本申请公开了一种衬底、LED及其制造方法，该衬底包括：衬底主体；转移牺牲层，设置于衬底主体的一侧主表面上，转移牺牲层上设置有多个开孔；缓冲层，设置于转移牺牲层远离衬底主体的一侧，包括分别填充于多个开孔内部且与衬底主体的主表面形成接触的多个支撑部以及与多个支撑部连接且与转移牺牲层层叠设置的平坦部，衬底主体和缓冲层针对特定蚀刻剂的耐受度大于转移牺牲层。通过上述方式，本申请提供的衬底能够在后续生成LED单元后通过对转移牺牲层进行蚀刻，而利用缓冲层相对于衬底主体悬空支撑LED单元，减小LED单元与衬底之间的附着力，降低分离和转移难度，还可以提高LED单元在衬底上的排布密度，减少LED芯片面积的损失，降低LED的制造成本。 【EN】The application discloses a substrate, LED and manufacturing method thereof, the substrate includes: a substrate body; the transfer sacrificial layer is arranged on the main surface of one side of the substrate main body, and a plurality of openings are formed in the transfer sacrificial layer; and the buffer layer is arranged on one side of the transfer sacrificial layer far away from the substrate main body and comprises a plurality of supporting parts which are respectively filled in the plurality of openings and are in contact with the main surface of the substrate main body and a flat part which is connected with the plurality of supporting parts and is arranged in a stacking way with the transfer sacrificial layer, and the tolerance of the substrate main body and the buffer layer to a specific etchant is higher than that of the transfer sacrificial layer. Through the mode, the substrate provided by the application can be used for etching the transfer sacrificial layer after the LED units are generated subsequently, and the buffer layer is used for supporting the LED units in a suspension mode relative to the substrate main body, so that the adhesive force between the LED units and the substrate is reduced, the separation and transfer difficulty is reduced, the arrangement density of the LED units on the substrate can be improved, the loss of the area of an LED chip is reduced, and the manufacturing cost of the LED is reduced.

摘要：【中文】本申请公开了一种垂直型发光二极管及其制造方法。该方法包括：在生长衬底的一侧主表面上生长第一缓冲层，第一缓冲层的材料为GaN、InGaN以及AlInGaN中的任意一种或组合；在第一缓冲层上生长第二缓冲层，其中第二缓冲层为AlGaN以及AlN中的任意一种或组合；在第二缓冲层上生长基于AlGaN材料体系的发光外延层，发光外延层包括与第二缓冲层接触的n型AlGaN半导体层；以第一缓冲层作为剥离牺牲层，以从第一缓冲层和生长衬底的接触面剥离生长衬底；去除第二缓冲层以外露n型AlGaN半导体层。通过上述方式，第一缓冲层作为牺牲层，帮助完成从生长衬底的接触面剥离生长衬底，能够在确保基于AlGaN材料体系发光外延层的生长质量的前提下，有效降低该发光外延层从生长衬底的剥离难度。 【EN】The application discloses a vertical light emitting diode and a manufacturing method thereof. The method comprises the following steps: growing a first buffer layer on one main surface of the growth substrate, wherein the first buffer layer is made of any one or combination of GaN, InGaN and AlInGaN; growing a second buffer layer on the first buffer layer, wherein the second buffer layer is any one or combination of AlGaN and AlN; growing a light-emitting epitaxial layer based on an AlGaN material system on the second buffer layer, wherein the light-emitting epitaxial layer comprises an n-type AlGaN semiconductor layer in contact with the second buffer layer; taking the first buffer layer as a stripping sacrificial layer to strip the growth substrate from the contact surface of the first buffer layer and the growth substrate; and removing the second buffer layer to expose the n-type AlGaN semiconductor layer. Through the mode, the first buffer layer is used as a sacrificial layer, the growth substrate is stripped from the contact surface of the growth substrate, and the difficulty in stripping the luminescent epitaxial layer from the growth substrate can be effectively reduced on the premise of ensuring the growth quality of the luminescent epitaxial layer based on an AlGaN material system.

摘要：【中文】本申请涉及发光二极管技术领域，具体公开了一种Micro‑LED芯片及其制造方法，该Micro‑LED芯片包括：缓冲层；发光外延层，包括依次层叠设置于缓冲层的一侧主表面上的第一导电类型半导体层、量子阱层以及第二导电类型半导体层，其中第二导电类型半导体层、量子阱层以及第一导电类型半导体层形成部分外露第一导电类型半导体层的台面结构，台面结构的外周壁上设置有以离子轰击方式形成且与台面结构一体设置的第一绝缘区。通过上述方式，本申请能够阻止载流子在台面结构的外周壁产生非辐射复合，进而提高Micro‑LED芯片光电转换效率。 【EN】The application relates to the technical field of light emitting diodes, and particularly discloses a Micro-LED chip and a manufacturing method thereof, wherein the Micro-LED chip comprises the following components: a buffer layer; the light-emitting epitaxial layer comprises a first conduction type semiconductor layer, a quantum well layer and a second conduction type semiconductor layer which are sequentially arranged on one main surface of the buffer layer in a laminated mode, wherein the second conduction type semiconductor layer, the quantum well layer and the first conduction type semiconductor layer form a mesa structure with a part exposed out of the first conduction type semiconductor layer, and a first insulation region which is formed in an ion bombardment mode and is integrally arranged with the mesa structure is arranged on the outer peripheral wall of the mesa structure. Through the mode, the non-radiative recombination of the current carrier on the outer peripheral wall of the mesa structure can be prevented, and the photoelectric conversion efficiency of the Micro-LED chip is further improved.

摘要：【中文】本申请公开了一种垂直型发光二极管及其制造方法。该方法包括：在生长衬底上生长至少第一缓冲层，第一缓冲层的材料为本征GaN、本征InGaN以及本征AlInGaN中的任意一种或组合；在第一缓冲层上生长n型接触层；在n型接触层上生长基于AlGaN材料体系的发光外延层，在发光外延层远离n型接触层的一侧键合转移衬底；从第一缓冲层和生长衬底的接触面剥离生长衬底；在保留的n型接触层远离发光外延层的一侧形成第一电极。通过上述方式，第一缓冲层作为牺牲层，帮助完成从生长衬底的接触面剥离生长衬底，在确保AlGaN材料体系的发光外延层生长质量的前提下，有效降低该发光外延层从生长衬底的剥离难度。同时，提高n型AlGaN半导体层的欧姆接触，提高n型AlGaN半导体层的电流扩散。 【EN】The application discloses a vertical light emitting diode and a manufacturing method thereof. The method comprises the following steps: growing at least a first buffer layer on a growth substrate, wherein the material of the first buffer layer is any one or combination of intrinsic GaN, intrinsic InGaN and intrinsic AlInGaN; growing an n-type contact layer on the first buffer layer; growing a light-emitting epitaxial layer based on an AlGaN material system on the n-type contact layer, and bonding a transfer substrate on one side of the light-emitting epitaxial layer, which is far away from the n-type contact layer; stripping the growth substrate from the contact surface of the first buffer layer and the growth substrate; and forming a first electrode on the side of the reserved n-type contact layer far away from the light-emitting epitaxial layer. Through the mode, the first buffer layer is used as a sacrificial layer, the growth substrate is stripped from the contact surface of the growth substrate, and the difficulty in stripping the luminescent epitaxial layer from the growth substrate is effectively reduced on the premise of ensuring the growth quality of the luminescent epitaxial layer of the AlGaN material system. Meanwhile, ohmic contact of the n-type AlGaN semiconductor layer is improved, and current diffusion of the n-type AlGaN semiconductor layer is improved.

摘要：【中文】本申请公开了一种衬底、LED及其制造方法。该衬底包括：衬底主体，衬底主体的一侧主表面上设置有彼此间隔排布的多个开孔；多个转移支撑结构，多个转移支撑结构分别对应地设置于开孔内，且彼此间隔排布，其中每个转移支撑结构分别包括填充于开孔内部的支撑柱以及与支撑柱连接且突出于衬底主体的主表面的支撑头，转移支撑结构针对特定蚀刻剂的耐受度大于衬底主体。通过上述方式，本申请提供的衬底能够在后续生成LED单元后通过对衬底主体进行蚀刻，而利用转移支撑结构相对于衬底主体悬空支撑LED单元，减小LED单元与衬底之间的附着力，降低分离和转移难度。进一步，上述方式可以提高LED单元在衬底上的排布密度，减少LED芯片面积的损失，降低LED的制造成本。 【EN】The application discloses a substrate, an LED and a manufacturing method thereof. The substrate includes: the substrate comprises a substrate main body, wherein a plurality of openings which are arranged at intervals are arranged on one main surface of the substrate main body; the substrate comprises a substrate main body, a plurality of transfer support structures and a plurality of support heads, wherein the substrate main body is provided with a main surface, the plurality of transfer support structures are respectively and correspondingly arranged in the open holes and are arranged at intervals, each transfer support structure respectively comprises a support column filled in the open hole and a support head connected with the support column and protruding out of the main surface of the substrate main body, and the tolerance of the transfer support structures to specific etchants is higher than that of the substrate main body. Through the mode, the substrate provided by the application can be used for etching the substrate main body after the LED units are generated subsequently, and the LED units are supported in a suspended mode relative to the substrate main body by utilizing the transfer supporting structure, so that the adhesive force between the LED units and the substrate is reduced, and the separation and transfer difficulty is reduced. Furthermore, the arrangement density of the LED units on the substrate can be improved, the loss of the area of the LED chip is reduced, and the manufacturing cost of the LED is reduced.

摘要：【中文】本发明涉及半导体材料和器件工艺领域，特别是半导体光电器件。本发明提供一种正装集成单元发光二极管，包括多个二极管单元以及设置于二极管单元之间的第一导电类型电极和第二导电类型电极，其中第一导电类型电极和第二导电类型电极在二极管单元之间的间隔区域内重叠设置。本发明解决了现有技术存在的二极管结构在流明效率、流明密度输出、流明成本三个重要的参数上极大局限性的技术问题，提高了单位面积芯片的流明输出，降低了流明成本。 【EN】The invention relates to the field of semiconductor material and device process, in particular to a semiconductor photoelectric device. The invention provides a forward integrated unit light-emitting diode, which comprises a plurality of diode units, and a first conductive type electrode and a second conductive type electrode which are arranged between the diode units, wherein the first conductive type electrode and the second conductive type electrode are arranged in an overlapped mode in a spacing area between the diode units. The invention solves the technical problem that the structure of the diode in the prior art is greatly limited in three important parameters of lumen efficiency, lumen density output and lumen cost, improves the lumen output of a chip in unit area and reduces the lumen cost.

摘要：【中文】本发明涉及半导体材料和器件工艺领域，特别是半导体光电器件。本发明提供一种正装集成单元二极管芯片，包括多个二极管单元、N型电极线条型电极线以及P型电极线条型电极线，其中二极管单元的面积从P型电极线条型电极线彼此汇总的一侧向另一侧逐渐变小。本发明解决了现有技术存在的二极管结构在流明效率、流明密度输出、流明成本三个重要的参数上极大局限性的技术问题，提高了单位面积单元二极管芯片的流明输出，降低了流明成本。 【EN】The invention relates to the field of semiconductor material and device process, in particular to a semiconductor photoelectric device. The invention provides a forward-mounted integrated unit diode chip which comprises a plurality of diode units, N-type electrode wire strip-shaped electrode wires and P-type electrode wire strip-shaped electrode wires, wherein the area of the diode units is gradually reduced from one side to the other side of the P-type electrode wire strip-shaped electrode wires in a gathering mode. The invention solves the technical problem that the diode structure in the prior art is greatly limited in three important parameters of lumen efficiency, lumen density output and lumen cost, improves the lumen output of the unit diode chip per unit area and reduces the lumen cost.