摘要：【中文】本说明书公开用于以不添加大量工艺复杂度的单一制造工艺将SiGe基异质结双极晶体管(HBT)和Si基双极结晶体管(BJT)集成在一起的方法，和能够利用这类流线型制造工艺制作的集成电路。在一些实施例中，这类集成电路能够享有所述SiGe HBT的较高射频(RF)性能和所述Si基BJT的较低泄漏电流的益处。在一些实施例中，能够将这类集成电路应用于静电放电(ESD)箝位电路以便实现较低良品率损失或无良品率损失。 【EN】The present specification discloses methods for integrating SiGe-based Heterojunction Bipolar Transistors (HBTs) and Si-based Bipolar Junction Transistors (BJTs) together in a single fabrication process that does not add significant process complexity, and integrated circuits that can be fabricated using such streamlined fabrication processes. In some embodiments, such integrated circuits can enjoy the benefits of the higher Radio Frequency (RF) performance of the SiGe HBT and the lower leakage current of the Si-based BJT. In some embodiments, such integrated circuits can be applied to electrostatic discharge (ESD) clamps in order to achieve lower or no yield loss.