摘要：【中文】一种金属羟基氧化物复合B‑BiVO₄光电阳极及其制备方法，属于电极材料制备领域。将纯BiVO₄光电阳极浸泡在硼酸盐溶液中(表示B‑BiVO₄)，在其表面上吸附[B(OH)₄]^‑配体作为钝化剂，提高光生载流子的分离效率并促进表面空穴的提取；然后，在经硼酸盐改性后的BiVO₄光电阳极上原位生长助催化剂金属羟基氧化物(如羟基氧化铁、羟基氧化钴、羟基氧化镍等)，增加光电阳极表面活性位点，加速空穴在光电阳极与电解质界面的传输，从而提高BiVO₄的光电水氧化性能。基于光生电荷的有效分离、空穴在光电阳极与电解质界面的快速传输，所制备的金属羟基氧化物复合B‑BiVO₄光电阳极能够高效运用于光电化学水分解。 【EN】Metal oxyhydroxide composite B-BiVO₄A photoelectric anode and a preparation method thereof belong to the field of electrode material preparation. Pure BiVO₄The photoanode is soaked in borate solution (representing B-BiVO)₄) Adsorbing on its surface [ B (OH)₄]^‑The ligand is used as a passivating agent to improve the separation efficiency of photon-generated carriers and promote the extraction of surface holes; then, BiVO modified by borate₄The in-situ growth of promoter metal oxyhydroxide (such as iron oxyhydroxide, cobalt oxyhydroxide, nickel oxyhydroxide and the like) on the photoelectric anode increases the surface active sites of the photoelectric anode and accelerates the transmission of holes on the interface of the photoelectric anode and an electrolyte, thereby improving BiVO₄Photoelectric water oxidation performance of (1). Based on effective separation of photo-generated charges and rapid transmission of holes at the interface of a photoelectric anode and an electrolyte, the prepared metal hydroxy oxide composite B-BiVO₄The photo-anode can be efficiently applied to photoelectrochemical water decomposition.

摘要：【中文】本发明公开了一种基于过渡金属二硫化物侧面异质结的纳米尺度整流器，属于纳米尺度电子器件技术领域。本发明的技术方案要点为：一种基于过渡金属二硫化物侧面异质结的纳米尺度整流器，由具有1T相结构的二硫化钒及2H相的二硫化钼单层构成一个侧面异质结结构，且漏极施加在1T相的二硫化钒单层区域，源极施加在2H相的二硫化钼单层区域，构成一个二极管结构，其施加有限偏压时，正向电压在超过0.4V阈值时可以导通，而反向电压则始终保持不导通状态，表现出极好的整流性质，整流比率高达10⁷数量级，整流二极管结构超薄，厚度不足4埃，大小尺寸可据实际需要灵活调控定制，且功耗较低。本发明具有结构超薄、尺寸可调、整流比率极高、功耗低的优良特点。 【EN】The invention discloses a nanoscale rectifier based on a transition metal disulfide side heterojunction, and belongs to the technical field of nanoscale electronic devices. The technical scheme provided by the invention has the key points that: a nanoscale rectifier based on a transition metal disulfide side heterojunction is characterized in that a side heterojunction structure is formed by vanadium disulfide with a 1T-phase structure and molybdenum disulfide with a 2H-phase single layer, a drain electrode is applied to a 1T-phase vanadium disulfide single layer region, a source electrode is applied to a 2H-phase molybdenum disulfide single layer region to form a diode structure, when limited bias voltage is applied, forward voltage can be conducted when the forward voltage exceeds a 0.4V threshold value, reverse voltage is always kept in a non-conducting state, and an excellent good display effect is achievedRectification property, rectification ratio is as high as 10⁷The rectifier diode has the advantages of ultra-thin structure, thickness less than 4 angstroms, flexible adjustment and customization of size according to actual needs, and low power consumption. The invention has the advantages of ultrathin structure, adjustable size, extremely high rectification ratio and low power consumption.

摘要：【中文】本发明公开了一种基于过渡金属二硫化物侧面异质结的光子探测器，属于纳米尺度电子器件技术领域。本发明的技术方案要点为：一种基于过渡金属二硫化物侧面异质结的纳米尺度光子探测器，由具有金属特性的1T相结构的二硫化钒单层与呈现半导体特性的2H相结构的二硫化钼单层组成的单层侧面异质结构成。本发明所述的光子探测器三极管结构超薄，厚度不足4埃，大小尺寸可据实际需要灵活调控定制且功耗较低。本发明具有结构超薄、尺寸可调、蓝光探测效果显著及功耗低等优良特点。 【EN】The invention discloses a photon detector based on a transition metal disulfide side heterojunction, and belongs to the technical field of nanoscale electronic devices. The technical scheme provided by the invention has the key points that: a nanoscale photon detector based on a transition metal disulfide side heterojunction is composed of a single-layer side heterojunction, wherein the single-layer side heterojunction is composed of a vanadium disulfide single layer with a 1T-phase structure and a molybdenum disulfide single layer with a 2H-phase structure and has a metal characteristic. The triode structure of the photon detector is ultrathin, the thickness is less than 4 angstroms, the size can be flexibly regulated and customized according to actual needs, and the power consumption is low. The invention has the advantages of ultrathin structure, adjustable size, obvious blue light detection effect, low power consumption and the like.