摘要：【中文】提供了一种发光装置。所述发光装置包括：n型接触层，包括AlGaN层或AlInGaN层；p型接触层，包括AlGaN层或AlInGaN层；有源区，设置在n型接触层与p型接触层之间，并且具有多量子阱结构，多量子阱结构的有源区包括以交替的方式彼此堆叠的阱层和阻挡层，阱层包括根据电子和空穴的概率分布函数存在的电子和空穴，其中，阻挡层具有比阱层更高的带隙并且由AlInGaN或AlGaN形成且Al含量为10％‑30％，阻挡层防止与阻挡层相邻的阱层中的电子和空穴的概率分布彼此重叠，并且阻挡层中的至少一个阻挡层具有比另一阻挡层更高的Al含量；n电极，设置在n型接触层上；以及p电极，设置在p型接触层上。 【EN】A light emitting device is provided. The light emitting device includes: the n-type contact layer comprises an AlGaN layer or an AlInGaN layer; the p-type contact layer comprises an AlGaN layer or an AlInGaN layer; an active region disposed between the n-type contact layer and the p-type contact layer and having a multiple quantum well structure, the active region of the multiple quantum well structure including well layers and barrier layers stacked on each other in an alternating manner, the well layers including electrons and holes existing according to a probability distribution function of the electrons and holes, wherein the barrier layers have a higher band gap than the well layers and are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%, the barrier layers prevent probability distributions of the electrons and holes in the well layers adjacent to the barrier layers from overlapping each other, and at least one of the barrier layers has an Al content higher than the other barrier layer; an n-electrode disposed on the n-type contact layer; and a p-electrode disposed on the p-type contact layer.