摘要：【中文】本发明公开了一种H1N1流感病毒抗体及其在H1N1病毒超微量检测方面的应用，该H1N1流感病毒抗体包括重链可变区、第一重链超可变区、第二重链超可变区、第三重链超可变区、轻链可变区、第一轻链超可变区、第二轻链超可变区和第三轻链超可变区；本发明的H1N1流感病毒抗体能够与H1N1流感病毒特异性结合，用于H1N1流感的超微量检测，实现H1N1流感的尽早预防和治疗，具有非常重要的经济和社会意义。 【EN】The invention discloses an H1N1 influenza virus antibody and application thereof in H1N1 virus ultramicro detection, wherein the H1N1 influenza virus antibody comprises a heavy chain variable region, a first heavy chain hypervariable region, a second heavy chain hypervariable region, a third heavy chain hypervariable region, a light chain variable region, a first light chain hypervariable region, a second light chain hypervariable region and a third light chain hypervariable region; the H1N1 influenza virus antibody can be specifically combined with H1N1 influenza virus, is used for ultramicro detection of H1N1 influenza, realizes early prevention and treatment of H1N1 influenza, and has very important economic and social meanings.

摘要：【中文】本发明公开了一种高均匀性单光子面光源的产生装置，由以下部件依次连接构成：波长λ重复频率F的脉冲激光器，经光纤连接衰减系数β的光学衰减器；衰减器经光纤连接准直透镜组；透镜组与发散角θ的微透镜对准；面积S的光功率探头与微透镜距离D；改变β，使光功率计的功率P＝FhcS/(10λ)后，固定β；改变F，获得任意激光重频下，距离D的光轴垂直面上±2θ角范围内单位面积上每脉冲0.1光子的高均匀性单光子面光源。本发明的优点在于产生的单光子面光源具有固定发散角，均匀性高，光子速率可灵活调制，覆盖大面积和长工作距离，适用于量子信息、单光子激光成像等领域。 【EN】The invention discloses a generating device of a high-uniformity single-photon area light source, which is formed by sequentially connecting a pulse laser with a wavelength lambda repetition frequency F, an optical attenuator with an attenuation coefficient β through an optical fiber, an attenuator with a collimating lens group through an optical fiber, a lens group aligned with a micro lens with a divergence angle theta, a light power probe with an area S and a micro lens distance D, a β for fixing β after the power P of an optical power meter is changed to FhcS/(10 lambda), and F is changed to obtain the high-uniformity single-photon area light source with 0.1 photon per pulse in a unit area within a range of +/-2 theta on an optical axis vertical plane of the distance D under any laser repetition frequency.

摘要：【中文】本发明公开了一种H1N1流感病毒抗体及其应用，结构包括重链可变区、第一重链超可变区、第二重链超可变区、第三重链超可变区、轻链可变区、第一轻链超可变区、第二轻链超可变区和第三轻链超可变区；本发明的H1N1流感病毒抗体能够与H1N1流感病毒特异性结合，用于H1N1流感的检测、预防和治疗，为H1N1流感的预防和治疗提供了新方法，具有非常重要的经济和社会意义。 【EN】The invention discloses an H1N1 influenza virus antibody and application thereof, the structure comprises a heavy chain variable region, a first heavy chain hypervariable region, a second heavy chain hypervariable region, a third heavy chain hypervariable region, a light chain variable region, a first light chain hypervariable region, a second light chain hypervariable region and a third light chain hypervariable region; the H1N1 influenza virus antibody can be specifically combined with H1N1 influenza virus, is used for detecting, preventing and treating H1N1 influenza, provides a new method for preventing and treating H1N1 influenza, and has very important economic and social meanings.

摘要：【中文】本发明公开了一种多层InGaAs探测器材料结构和制备方法：所述探测材料结构由下往上依次为InP(001)衬底、n型InP缓冲层、i型晶格匹配的InGaAs吸收层、n型晶格匹配的InGaAs阻挡层和n型InP帽层。其中，所述的n型阻挡层的厚度为40nm～200nm，其掺杂浓度5x10¹⁵cm^‑3～5x10¹⁷cm^‑3，其材料为与InP晶格匹配的InGaAs。制备方法为依次分子束外延生长即可。本发明的InGaAs探测材料增加的n型阻挡层能够有效实现对扩散成结工艺的控制。 【EN】The invention discloses a multilayer InGaAs detector material structure and a preparation method thereof, wherein the multilayer InGaAs detector material structure comprises the following steps: the detection material structure sequentially comprises an InP (001) substrate, an n-type InP buffer layer, an i-type lattice-matched InGaAs absorption layer, an n-type lattice-matched InGaAs barrier layer and an n-type InP cap layer from bottom to top. Wherein the thickness of the n-type barrier layer is 40 nm-200 nm, and the doping concentration is 5x10¹⁵cm^‑3～5x10¹⁷cm^‑3The material is InGaAs lattice-matched to InP. The preparation method comprises sequential molecular beam epitaxial growth. The n-type barrier layer added to the InGaAs detection material can effectively realize the control of the diffusion junction forming process.

摘要：【中文】本发明公开了一种抗ANGPTL3单克隆抗体，所述单克隆抗体的重链氨基酸序列为SEQ ID:No 1，轻链氨基酸序列为SEQ ID:No 2；重链DNA序列为SEQ ID:No 3，轻链DNA序列为SEQ ID:No 4。本发明的抗ANGPTL3单克隆抗体在制备治疗肾病综合征药物中的应用，所述抗ANGPTL3单克隆抗体特异性识别ANGPTL3，阻断ANGPTL3的纤维蛋白原样结构域，拮抗ANGPTL3对足细胞的损伤。本发明可应用于检测ANGPTL3，有望用于肾病综合征蛋白尿的治疗。 【EN】The invention discloses an anti-ANGPTL 3 monoclonal antibody, wherein the heavy chain amino acid sequence of the monoclonal antibody is SEQ ID No 1, and the light chain amino acid sequence is SEQ ID No 2; the heavy chain DNA sequence is SEQ ID No 3, and the light chain DNA sequence is SEQ ID No 4. The anti-ANGPTL 3 monoclonal antibody specifically recognizes ANGPTL3, blocks a fibrinogen-like domain of ANGPTL3 and antagonizes damage of ANGPTL3 to podocytes, and is applied to preparation of a medicament for treating nephrotic syndrome. The kit can be used for detecting ANGPTL3, and is expected to be used for treating nephrotic syndrome proteinuria.

摘要：【中文】本发明公开了一种PIIN型高In组分InGaAs探测器材料结构和制备方法，所述探测材料结构由下往上依次为InP(001)衬底、n型In_xAl_1‑xAs缓冲层、i型In_yGa_1‑yAs吸收层、i型In_zAl_1‑zAs插入层和p型In_zAl_1‑zAs帽层。其中，所述的In_zAl_1‑zAs插入层的厚度为40nm～200nm，其掺杂浓度为2x10¹⁴cm^‑3～1x10¹⁵cm^‑3。制备方法为依次分子束外延生长即可。本发明的优势在于，InGaAs探测材料结构中增加的i型插入层能够有效实现对PN结结位置的控制，从而实现器件暗电流的降低。 【EN】The invention discloses a PIIN type high-In-content InGaAs detector material structure and a preparation method thereof, wherein the detection material structure sequentially comprises an InP (001) substrate and n-type In from bottom to top_xAl_1‑xAs buffer layer and i-type In_yGa_1‑yAs absorption layer, i-type In_zAl_1‑zAs insertion layer and p-type In_zAl_1‑zAn As cap layer. Wherein, said In_zAl_1‑zThe thickness of the As insertion layer is 40 nm-200 nm, and the doping concentration is 2x10¹⁴cm^‑3～1x10¹⁵cm^‑3. The preparation method comprises sequential molecular beam epitaxial growth. The invention has the advantages that the added i-type insertion layer in the InGaAs detection material structure can effectively realize the control of the position of the PN junction, thereby realizing the reduction of the dark current of the device.

摘要：【中文】本发明属于抛光液领域，具体涉及一种用于降低多层铜互连阻挡层CMP缺陷的碱性抛光液及其制备方法。抛光液由下述组分组成，按质量份百分比计：硅溶胶5‑20％，螯合剂0.1‑5％，表面活性剂0.001‑5％，氧化剂0.001‑10％，去离子水余量；其中，所述的表面活性剂为非离子活性剂和阴离子活性剂进行复配获得。本发明抛光液呈碱性，pH为7.5‑11，不腐蚀设备，不污染环境。本发明使用纳米SiO2溶胶作为抛光液磨料，其浓度高，分散度好、硬度小。本发明由硅溶胶、螯合剂、表面活性剂、助溶剂、氧化剂和去离子水组成，成分简单，稳定性好，价格便宜。 【EN】The invention belongs to the field of polishing solution, and particularly relates to alkaline polishing solution for reducing the CMP defects of a multilayer copper interconnection barrier layer and a preparation method thereof. The polishing solution consists of the following components in percentage by mass: 5-20% of silica sol, 0.1-5% of chelating agent, 0.001-5% of surfactant, 0.001-10% of oxidant and the balance of deionized water; wherein, the surfactant is obtained by compounding a nonionic active agent and an anionic active agent. The polishing solution of the invention is alkaline, has pH of 7.5-11, does not corrode equipment, and does not pollute the environment. The invention uses the nano SiO2 sol as the polishing liquid abrasive, and has high concentration, good dispersion degree and small hardness. The invention is composed of silica sol, chelating agent, surfactant, cosolvent, oxidant and deionized water, and has simple components, good stability and low price.

摘要：【中文】本发明公开了一种表征InGaAs探测器材料缺陷与器件性能关联性的方法,方法步骤为：对InGaAs探测器件进行电镜镜检，对镜检后的正常InGaAs探测器件进行电流‑电压性能测试，之后对电流‑电压测试中的正常器件和问题器件均进行微光显微镜测试，微光显微镜测试可以看出问题器件存在亮点，对微光显微镜测试中出现的亮点处进行聚焦离子束刻蚀，并用透射电子显微镜进行测试，透射电子显微镜测试反映出该处存在缺陷。此方法提出了将InGaAs探测器材料缺陷与器件性能建立关联性的方法，对器件性能研究有较好的通用性。 【EN】The invention discloses a method for representing the relevance of InGaAs detector material defects and device performance, which comprises the following steps: the method comprises the steps of carrying out electron microscope microscopic examination on an InGaAs detection device, carrying out current-voltage performance test on a normal InGaAs detection device after microscopic examination, then carrying out micro-light microscope test on a normal device and a problem device in the current-voltage test, wherein the micro-light microscope test can find out that the problem device has a bright spot, carrying out focused ion beam etching on the bright spot in the micro-light microscope test, and carrying out test by using a transmission electron microscope, wherein the transmission electron microscope test reflects that the spot has a defect. The method provides a method for establishing the relevance between the InGaAs detector material defects and the device performance, and has good universality for device performance research.

摘要：【中文】本发明涉及一种低盐泡菜高压电场低温等离子体冷杀菌保鲜技术方法，属于食品杀菌和保鲜领域。所述低盐泡菜高压电场低温等离子体冷杀菌保鲜技术的法，技术方案为：将腌渍发酵的低盐泡菜放入包装袋(盒)中，并调整泡菜腌渍发酵液NaCl浓度为2.5‑4.0％、总酸度在0.4‑0.6％，按泡菜：腌渍发酵液＝1:1(w/v)比例加入包装袋(盒)中，充气包装；再在15‑20℃、相对湿度50‑70％RH条件下，将包装袋(盒)置于高压电场低温等离子体杀菌装置的两个电极之间，采用短时‑间隙‑多次杀菌方式：电压强度为55‑65kV/cm、频率为70‑120Hz、电流为0.3‑0.8mA，单次电场作用时间为20‑60s、间隔时间为20‑60s，重复处理2‑5次完成杀菌过程。本发明对低盐泡菜采用低温等离子体短时‑间隙‑多次冷杀菌方式，在保证泡菜感官品质的情况下，具有杀灭致胀气真菌的作用，显著提高杀菌效果和货架保鲜期，能满足地方特色泡菜的大规模自动化生产要求。 【EN】The invention relates to a high-voltage electric field low-temperature plasma cold sterilization and preservation technical method for low-salt pickled vegetables, and belongs to the field of food sterilization and preservation. The technical scheme of the low-salt pickle high-voltage electric field low-temperature plasma cold sterilization and preservation technology is as follows: putting the pickled and fermented low-salt pickle into a packaging bag (box), adjusting the concentration of NaCl in a pickle pickling fermentation liquor to be 2.5-4.0%, and the total acidity to be 0.4-0.6%, and mixing the components in percentage by weight: adding the pickling fermentation liquor into a packaging bag (box) in a ratio of 1:1(w/v), and carrying out air-filled packaging; then placing the packaging bag (box) between two electrodes of a high-voltage electric field low-temperature plasma sterilization device under the conditions of 15-20 ℃ and 50-70% relative humidity RH, adopting a short-time-gap-multiple sterilization mode: the voltage intensity is 55-65kV/cm, the frequency is 70-120Hz, the current is 0.3-0.8mA, the single electric field action time is 20-60s, the interval time is 20-60s, and the sterilization process is completed by repeating the treatment for 2-5 times. The invention adopts a low-temperature plasma short-time-gap-multiple cold sterilization mode for the low-salt pickle, has the function of killing flatulence fungi under the condition of ensuring the sensory quality of the pickle, obviously improves the sterilization effect and the shelf life, and can meet the large-scale automatic production requirement of the local special pickle.

摘要：【中文】本发明公开了一种氢燃料电池与动力电池混合动力客车的能量控制方法，包括步骤：采集电机功率数据；在电机平均功率值左右一定范围内选取SOC值，对电堆功率范围进行插值分配；增加车辆停车判断；锁定电堆变载频率标准，并评估是否满足要求；判断电池SOH情况；增加低SOC强行启堆动作。本发明基于电堆系统控制器、BMS和整车控制器系统，可通过即时数据完成能量控制策略指定和优化。并通过VCU对整车动力状态进行判断，增加停车电堆低功率供电和低SOC强制启堆操作，进一步保证了电堆和电池的健康工作状态。使电堆在尽可能满足整车功率需求的基础上尽量低功率输出，保证电堆寿命同时降低氢耗。同时可使电池在相对较高且稳定的SOC区间工作，延长电池寿命。 【EN】The invention discloses an energy control method of a hydrogen fuel cell and power cell hybrid power bus, which comprises the following steps: collecting power data of a motor; selecting an SOC value within a certain range around the average power value of the motor, and performing interpolation distribution on the power range of the cell stack; increasing vehicle parking judgment; locking a variable load frequency standard of the electric pile, and evaluating whether the variable load frequency standard meets the requirements; judging the SOH condition of the battery; and increasing the low SOC to forcibly start the stack. The invention is based on a stack system controller, a BMS and a vehicle control unit system, and can complete energy control strategy specification and optimization through instant data. And the power state of the whole vehicle is judged through the VCU, the low-power supply of the parking electric pile and the forced pile starting operation of the low SOC are increased, and the healthy working states of the electric pile and the battery are further ensured. The galvanic pile can output power as low as possible on the basis of meeting the power requirement of the whole vehicle as much as possible, the service life of the galvanic pile is ensured, and the hydrogen consumption is reduced. Meanwhile, the battery can work in a relatively high and stable SOC interval, and the service life of the battery is prolonged.