摘要：【中文】本实用新型公开了一种用于射频系统三维集成的封装结构，该结构包括从下到上交替纵向堆叠设置的硅基转接板和支撑互联转接板；支撑互联转接板至少两个，且其之间形成空腔；硅基转接板和支撑互联转接板均包括硅基板、硅通孔TSV、微凸点和RDL布线层；硅通孔TSV贯穿于硅基板；硅基板的上表面和下表面上均设置有RDL布线层；微凸点设置于两个RDL布线层上；硅通孔TSV、RDL布线层和微凸点相互连接。该结构具有上下垂直互联，以及结构支撑的作用，可以实现射频芯片的三维垂直堆叠，同时可以通过灵活的设计解决射频芯片三维堆叠时的电磁兼容性问题。 【EN】The utility model discloses a three-dimensional integrated packaging structure for a radio frequency system, which comprises a silicon-based adapter plate and a supporting interconnection adapter plate which are alternately and longitudinally stacked from bottom to top; at least two interconnected adapter plates are supported, and a cavity is formed between the two interconnected adapter plates; the silicon-based adapter plate and the support interconnection adapter plate respectively comprise a silicon substrate, a Through Silicon Via (TSV), a micro bump and an RDL wiring layer; the through silicon via TSV penetrates through the silicon substrate; RDL wiring layers are arranged on the upper surface and the lower surface of the silicon substrate; the micro-bumps are arranged on the two RDL wiring layers; and the TSV, the RDL wiring layer and the micro-bump are mutually connected. The structure has the functions of vertical interconnection and structural support, can realize three-dimensional vertical stacking of the radio frequency chip, and can solve the problem of electromagnetic compatibility when the radio frequency chip is three-dimensionally stacked through flexible design.

摘要：【中文】本实用新型公开了一种新型射频传输结构，包括硅基板及设置于硅基板上射频信号传输硅通孔TSV和若干个接地硅通孔TSV；射频信号传输硅通孔TSV设置于由接地硅通孔TSV围成的圆形中心，与其形成类同轴结构；射频信号传输硅通孔TSV的孔内直径大于接地硅通孔TSV的孔内直径。本实用新型中的射频传输结构通过小尺寸高深径比TSV与传统孔径的中空结构TSV相结合的方式，在实现垂直贯穿微电子芯片体内的电互连通路，支持芯片级三维层叠集成与封装的同时，进一步缩小封装尺寸，解决高频传输性能不佳，传统的TSV应力较大的缺点，实现高可靠性、低损耗的射频垂直互联结构。 【EN】The utility model discloses a novel radio frequency transmission structure, which comprises a silicon substrate, a radio frequency signal transmission Through Silicon Via (TSV) and a plurality of grounding Through Silicon Vias (TSV), wherein the TSV is arranged on the silicon substrate; the radio frequency signal transmission silicon through hole TSV is arranged in the center of a circle formed by the surrounding of the grounding silicon through hole TSV, and a quasi-coaxial structure is formed between the radio frequency signal transmission silicon through hole TSV and the grounding silicon through hole TSV; the inner diameter of the radio frequency signal transmission silicon through hole TSV is larger than that of the grounding silicon through hole TSV. The utility model provides a radio frequency transmission structure is through the mode that the hollow structure TSV of small-size height depth-diameter ratio TSV and traditional aperture combined together, runs through the internal electric interconnection route of microelectronic chip perpendicularly in the realization, when supporting the three-dimensional range upon range of integration of chip level and encapsulation, further dwindles the encapsulation size, and it is not good to solve high frequency transmission performance, and the great shortcoming of traditional TSV stress realizes the perpendicular interconnected structure of high reliability, low-loss radio frequency.