摘要：【中文】一种集成电路(IC)器件可以包括：鳍型有源区，从衬底突出并沿第一水平方向延伸；第一纳米片，设置在鳍型有源区的上表面之上，其间具有第一分离空间；第二纳米片，设置在第一纳米片之上，其间具有第二分离空间；栅极线，在与第一水平方向交叉的第二水平方向上在衬底上延伸，栅极线的至少一部分设置在第二分离空间中；和底部绝缘结构，设置在第一分离空间中。 【EN】An Integrated Circuit (IC) device may include: a fin-type active region protruding from the substrate and extending in a first horizontal direction; the first nanometer sheet is arranged on the upper surface of the fin-shaped active region, and a first separation space is arranged between the first nanometer sheet and the fin-shaped active region; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction crossing the first horizontal direction, at least a portion of the gate line being disposed in the second separated space; and a bottom insulation structure disposed in the first separation space.

摘要：【中文】提供了一种半导体器件。半导体器件可以包括：第一布线图案，在衬底上沿第一方向延伸；以及第二布线图案，在所述第一布线图案上。第二布线图案可以与第一布线图案间隔开并沿第一方向延伸。半导体器件还可以包括：第一栅极结构，至少部分地围绕所述第一布线图案和所述第二布线图案；第二栅极结构，沿第一方向与所述第一栅极结构间隔开；第一源/漏区，在所述第一栅极结构和所述第二栅极结构之间；第一间隔部，在所述第一源/漏区的底表面和所述衬底之间；第一源/漏接触，在所述第一源/漏区上；以及第二间隔部，在所述第一源/漏接触和所述第一栅极结构之间。 【EN】A semiconductor device is provided. The semiconductor device may include: a first wiring pattern extending in a first direction on a substrate; and a second wiring pattern on the first wiring pattern. The second wiring pattern may be spaced apart from the first wiring pattern and extend in the first direction. The semiconductor device may further include: a first gate structure at least partially surrounding the first wiring pattern and the second wiring pattern; a second gate structure spaced apart from the first gate structure along a first direction; a first source/drain region between the first gate structure and the second gate structure; a first spacer between a bottom surface of the first source/drain region and the substrate; a first source/drain contact on the first source/drain region; and a second spacer between the first source/drain contact and the first gate structure.