摘要：【中文】本发明公开了一种PVD溅射设备的晶圆按指定路径回盘的控制方法和系统，其中控制方法包括以下步骤：选择源腔室和目的腔室，并选择源腔室的托盘位置和目的腔室的托盘位置；选择工艺配方，工艺配方包括目标晶圆从源腔室传输至目的腔室将要执行的工艺参数；确认开始传盘后，生成并执行第一个子任务，同时监控第一个子任务的状态；当第一个子任务结束时，生成并执行第二个子任务，直至第N个子任务结束，N为自然数，完成目标晶圆从源腔室到目的腔室的回盘操作。本发明的有益效果在于，将在工艺腔室中加工的晶圆从工艺腔室传送到冷却腔室再到装卸载腔室的传输过程，只需一键操作，减轻了操作人员的工作任务，提高了任务的执行效率。 【EN】The invention discloses a control method and a system for returning a wafer of PVD sputtering equipment to a disk according to a specified path, wherein the control method comprises the following steps: selecting a source chamber and a target chamber, and selecting a tray position of the source chamber and a tray position of the target chamber; selecting a process recipe, wherein the process recipe comprises process parameters to be executed when a target wafer is transmitted from a source chamber to a target chamber; after the disk transmission is confirmed to be started, generating and executing a first subtask, and monitoring the state of the first subtask; and when the first subtask is finished, generating and executing a second subtask until the Nth subtask is finished, wherein N is a natural number, and completing the disc returning operation of the target wafer from the source chamber to the target chamber. The invention has the advantages that the wafer processed in the process chamber is transferred from the process chamber to the cooling chamber and then to the loading and unloading chamber, only one key is needed for operation, the work task of an operator is reduced, and the execution efficiency of the task is improved.

摘要：【中文】本申请实施例提供了一种冷却装置及其控制方法、半导体加工设备。冷却装置用于对托盘进行冷却，其包括腔室以及设置于腔室内的驱动单元、冷却单元及加热单元；所述驱动单元用于驱动所述托盘移动，以带动所述托盘选择性位于第一位置或第二位置；所述冷却单元用于对所述托盘进行冷却，当所述托盘位于第一位置时以第一速率对所述托盘降温，当所述托盘位于第二位置时以第二速率对所述托盘降温，且所述第二速率大于所述第一速率；所述加热单元用于选择性对所述托盘进行加热，以调整所述冷却单元对所述托盘冷却的速率。本申请实施例实现了稳定托盘的冷却速度，从而可以有效提高冷却效率，进而使得托盘的冷却不再成为影响产能的瓶颈。 【EN】The embodiment of the application provides a cooling device, a control method thereof and semiconductor processing equipment. The cooling device is used for cooling the tray and comprises a cavity, and a driving unit, a cooling unit and a heating unit which are arranged in the cavity; the driving unit is used for driving the tray to move so as to drive the tray to be selectively positioned at a first position or a second position; the cooling unit is used for cooling the tray, when the tray is located at a first position, the tray is cooled at a first speed, when the tray is located at a second position, the tray is cooled at a second speed, and the second speed is greater than the first speed; the heating unit is used for selectively heating the tray so as to adjust the cooling rate of the tray by the cooling unit. The embodiment of the application realizes the cooling speed of the stable tray, thereby effectively improving the cooling efficiency and further ensuring that the cooling of the tray does not become the bottleneck influencing the productivity any more.

摘要：【中文】本发明提供一种薄膜制备方法，其包括：第一沉积步，向工艺腔室中通入工艺气体，并向靶材加载射频功率，以在衬底上沉积薄膜阻挡层，其中，第一沉积步包括至少两个阻挡层沉积时段，每一阻挡层沉积时段采用的射频功率均大于上一阻挡层沉积时段采用的射频功率；第二沉积步，继续向工艺腔室中通入所述工艺气体，并向靶材加载直流功率，以在薄膜阻挡层上沉积薄膜主体层，其中，第二沉积步包括至少两个主体层沉积时段，每一主体层沉积时段采用的直流功率均大于上一主体层沉积时段采用的直流功率。本发明提供的薄膜制备方法，其可以在减少对底部衬底材料或者阻挡层造成的损伤的基础上，提高产能。 【EN】The invention provides a film preparation method, which comprises the following steps: the method comprises a first deposition step, a second deposition step and a third deposition step, wherein the first deposition step comprises at least two barrier layer deposition periods, and the radio frequency power adopted in each barrier layer deposition period is larger than that adopted in the previous barrier layer deposition period; and a second deposition step of continuously introducing the process gas into the process chamber and loading direct current power to the target to deposit the film main body layer on the film barrier layer, wherein the second deposition step comprises at least two main body layer deposition time periods, and the direct current power adopted in each main body layer deposition time period is greater than that adopted in the last main body layer deposition time period. The film preparation method provided by the invention can improve the productivity on the basis of reducing the damage to the bottom substrate material or the barrier layer.

摘要：【中文】本申请实施例提供了一种承载装置及半导体加工设备。该承载装置设置于工艺腔室内，包括：基座及多个支撑组件；多个支撑组件均设置于基座上，且多个支撑组件相互配合以支撑托盘；支撑组件包括检测部，用于检测支撑组件上受到的压力值。本申请实施例实现了通过支撑组件可以直接对托盘进行检测，可以使得承载装置实现了能够及时发现托盘异常情况，对于无盘、倾斜及碎盘现象均可以通过支撑组件进行检测，从而可以避免承载装置上的托盘发生异常情况。 【EN】The embodiment of the application provides a bearing device and semiconductor processing equipment. This bear device sets up in the technology cavity, includes: a base and a plurality of support components; the plurality of supporting components are arranged on the base and are matched with each other to support the tray; the supporting component comprises a detection part used for detecting the pressure value applied to the supporting component. The embodiment of the application realizes that the tray can be directly detected through the supporting component, the abnormal condition of the tray can be timely found through the bearing device, the tray-free, inclined and broken tray phenomena can be detected through the supporting component, and therefore the abnormal condition of the tray on the bearing device can be avoided.

摘要：【中文】一种应用于薄膜沉积装置的托盘，包括：第一盘体、第二盘体以及连接组件。第一盘体包括用于承载晶圆的多个通孔，且第一盘体下表面设置有多个第一槽位。第二盘体的尺寸与第一盘体的尺寸相对应，且第二盘体上表面设置有多个第二槽位。第二槽位的形状及位置与第一槽位的形状及位置相对应。连接组件位于一一对应的第一槽位及第二槽位之间，用于实现第一盘体和第二盘体的固定连接。第一盘体采用第一材质制备，第二盘体采用第二材质制备,且第一材质的热膨胀系数与待沉积薄膜的热膨胀系数的相对偏差值小于20％，以减少对所述晶圆沉积薄膜时的应力影响；第一材质的体积电阻率大于第二材质的体积电阻率，以使在对晶圆沉积薄膜时第一盘体形成绝缘体。 【EN】A tray for use in a thin film deposition apparatus, comprising: first disk, second disk and coupling assembling. The first disc body comprises a plurality of through holes for bearing wafers, and a plurality of first groove positions are arranged on the lower surface of the first disc body. The size of the second tray body corresponds to that of the first tray body, and a plurality of second groove positions are arranged on the upper surface of the second tray body. The shape and position of the second slot position correspond to the shape and position of the first slot position. The connecting assembly is located between the first slot position and the second slot position which are in one-to-one correspondence, and is used for fixedly connecting the first tray body and the second tray body. The first tray body is made of a first material, the second tray body is made of a second material, and the relative deviation value of the thermal expansion coefficient of the first material and the thermal expansion coefficient of the film to be deposited is less than 20% so as to reduce the stress influence on the wafer during film deposition; the volume resistivity of the first material is greater than the volume resistivity of the second material so that the first disk forms an insulator when the thin film is deposited on the wafer.