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申请号:201880060346.7 公开号:CN111095416A 主分类号:G11C11/419
申请人:【中文】高通股份有限公司【EN】QUALCOMM Inc. 申请日:2018.08.23 公开日:2020.05.01
摘要:【中文】提供了用于将数据写入到静态随机存取存储器(SRAM)中的系统、方法和装置。写入驱动器电路包括位单元阵列、耦合到该位单元阵列的位线、以及第一驱动电路,该第一驱动电路被配置为经由写入驱动器节点驱动位线,用于将数据写入到位单元中,以进行写入操作。写入驱动器电路还包括预充电电路,该预充电电路被配置为控制写入驱动器电路或与写入驱动器电路一起操作,以将写入驱动器节点驱动至用于写入操作的高电压电平或低电压电平,并将写入驱动器节点预充电至高电压电平,并使写入驱动器节点浮置,以进行位掩蔽操作。 【EN】Systems, methods, and apparatuses are provided for writing data into a Static Random Access Memory (SRAM). The write driver circuit includes an array of bit cells, bit lines coupled to the array of bit cells, and a first drive circuit configured to drive the bit lines via a write driver node for writing data into the bit cells for a write operation. The write driver circuit also includes a precharge circuit configured to control or operate with the write driver circuit to drive the write driver node to a high voltage level or a low voltage level for a write operation and to precharge the write driver node to the high voltage level and float the write driver node for a bit masking operation.
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