摘要：【中文】本发明提供的一种单晶硅加料数据的确定方法、装置及设备，包括：获取单晶炉的工步状态；在工步状态为卸离硅棒工步的情况下，获取单晶炉的运行参数数据；在根据运行参数数据，确定开始进行加料操作的情况下，获取单晶炉中坩埚的信息、单晶炉所需原料的原料信息，并根据坩埚的信息、原料信息和运行参数数据，确定加料数据。本发明中，在工步状态为卸离硅棒工步时，就可以通过单晶炉的运行参数数据、坩埚的信息和原料信息，确定加料数据，使得制备单晶硅的加料操作更加快速和准确，缩短了确定单晶硅加料数据的时间，提高了单晶硅的生产效率。 【EN】The invention provides a method, a device and equipment for determining monocrystalline silicon charging data, which comprises the following steps: acquiring the process step state of the single crystal furnace; acquiring operation parameter data of the single crystal furnace under the condition that the process step state is the silicon rod unloading process step; and under the condition that the charging operation is determined to be started according to the operation parameter data, acquiring the information of a crucible in the single crystal furnace and the raw material information of raw materials required by the single crystal furnace, and determining the charging data according to the information of the crucible, the raw material information and the operation parameter data. According to the invention, when the silicon rod unloading process step is in the process step of silicon rod unloading, the feeding data can be determined through the operation parameter data of the single crystal furnace, the crucible information and the raw material information, so that the feeding operation for preparing the monocrystalline silicon is quicker and more accurate, the time for determining the monocrystalline silicon feeding data is shortened, and the production efficiency of the monocrystalline silicon is improved.

摘要：【中文】本公开提供一种单晶炉漏硅检测方法、设备及存储介质，涉及太阳能光伏领域，能够及时检测单晶炉是否漏硅，提高单晶炉的安全性，降低事故风险。具体技术方案为：获取同一时刻单晶炉坩埚内硅液液面的理论高度值和实际高度值；计算硅液液面的理论高度值和实际高度值的差值；在差值大于预设阈值时，确定单晶炉发生漏硅。本发明用于漏硅检测。 【EN】The invention provides a silicon leakage detection method and device for a single crystal furnace and a storage medium, relates to the field of solar photovoltaic, and can detect whether the single crystal furnace leaks silicon in time, improve the safety of the single crystal furnace and reduce the accident risk. The specific technical scheme is as follows: obtaining a theoretical height value and an actual height value of the liquid level of the silicon liquid in the crucible of the single crystal furnace at the same moment; calculating the difference value between the theoretical height value and the actual height value of the liquid level of the silicon liquid; and when the difference value is larger than a preset threshold value, determining that the silicon leakage occurs in the single crystal furnace. The invention is used for silicon leakage detection.

摘要：【中文】本发明提供一种单晶硅生长用掺杂剂的控制方法、装置、设备及存储介质，包括：在当前单晶硅制备完成后，获取当前的工艺参数，将当前的工艺参数输入预设模型中，确定掺杂剂的目标挥发比例；获取在当前单晶硅制备完成后的掺杂剂的理论剩余量；根据理论剩余量和目标挥发比例，确定掺杂剂的实际剩余量；获取下次单晶硅生长用掺杂剂的理论需求量，并根据掺杂剂的实际剩余量和下次单晶硅生长用掺杂剂的理论需求量，控制下次单晶硅生长用掺杂剂的实际需求量。本发明实施例通过采用预设模型，能够准确获取当前单晶硅在拉至完成后至下次填料过程中掺杂剂的挥发比例，进而更好的控制下次填料的掺杂剂的量，使得生长的下次单晶硅的电阻率符合预设的要求。 【EN】The invention provides a method, a device, equipment and a storage medium for controlling a dopant for monocrystalline silicon growth, wherein the method comprises the following steps: after the preparation of the current monocrystalline silicon is finished, obtaining current process parameters, inputting the current process parameters into a preset model, and determining the target volatilization proportion of the dopant; obtaining the theoretical residual amount of the dopant after the preparation of the current monocrystalline silicon is finished; determining the actual residual amount of the doping agent according to the theoretical residual amount and the target volatilization proportion; and obtaining the theoretical demand of the dopant for next monocrystalline silicon growth, and controlling the actual demand of the dopant for next monocrystalline silicon growth according to the actual residual amount of the dopant and the theoretical demand of the dopant for next monocrystalline silicon growth. According to the embodiment of the invention, the preset model is adopted, so that the volatilization proportion of the dopant in the process from the completion of pulling to the next filling of the current monocrystalline silicon can be accurately obtained, the dopant amount of the next filling is further better controlled, and the resistivity of the grown next monocrystalline silicon meets the preset requirement.