摘要：【中文】本发明涉及到一种用于焊接模块的改良芯片，包括芯片；所述芯片上表面的门极电极设置在电极层中心，所述门极电极外圈附有环状放大门极电极，所述放大门极电极向外均匀延伸呈放射状，所述放大门极电极向外延伸的分支间隔相等，所述放大门极电极覆盖有阻焊层，所述阻焊层顶部与第二钼片绝缘隔离接触，所述第二钼片底面与芯片上表面的电极层焊接，所述第二钼片中心卡装有绝缘引线套，所述绝缘引线套内置的门极电极引线沿引出孔伸出。本发明采用多面焊接组装结构，取代以往具备放大门极电极晶闸管压接模块的组装结构；对比无放大门极电极焊接晶闸管芯片，可提高晶闸管电流上升性能。 【EN】The invention relates to an improved chip for welding a module, which comprises a chip; the gate electrode on the upper surface of the chip is arranged in the center of the electrode layer, the outer ring of the gate electrode is attached with an annular amplifying gate electrode, the amplifying gate electrode uniformly extends outwards in a radial shape, the intervals of the outward extending branches of the amplifying gate electrode are equal, the amplifying gate electrode is covered with a solder mask, the top of the solder mask is in insulated isolated contact with a second molybdenum sheet, the bottom surface of the second molybdenum sheet is welded with the electrode layer on the upper surface of the chip, the center of the second molybdenum sheet is clamped with an insulated lead sleeve, and a gate electrode lead arranged in the insulated lead sleeve extends out along the lead-out hole. The invention adopts a multi-surface welding assembly structure to replace the prior assembly structure with an amplifying gate electrode thyristor compression joint module; compared with a thyristor chip welded by a non-amplification gate electrode, the current rise performance of the thyristor can be improved.