摘要：【中文】本发明涉及一种复合阴极结构及有机电致发光器件，复合阴极结构包括层叠的第一阴极层和第二阴极层，所述第一阴极层为透明导电氧化物层，所述第二阴极层由功函数小于3eV且原子序数大于20的金属形成。当在电子传输层与透明导电氧化物层之间加入低功函数(功函数小于3eV)的活性金属层，可以避免或降低电子传输层材料受到高能粒子破坏的风险，且可以帮助电子注入。而且通过比较一系列具有较低功函数的金属发现，原子序数较小(原子质量较轻)的低功函数金属对于高能粒子轰击造成破坏的抵抗效果有限，而原子序数较大(原子质量较重)尤其是原子序数大于20的低功函数金属则具有较好的抵抗高能粒子轰击的效果。 【EN】The invention relates to a composite cathode structure and an organic electroluminescent device, wherein the composite cathode structure comprises a first cathode layer and a second cathode layer which are stacked, the first cathode layer is a transparent conductive oxide layer, and the second cathode layer is formed by metal with the work function smaller than 3eV and the atomic number larger than 20. When the active metal layer with low work function (the work function is less than 3eV) is added between the electron transport layer and the transparent conductive oxide layer, the risk that the electron transport layer material is damaged by high-energy particles can be avoided or reduced, and the electron injection can be assisted. Moreover, by comparing a series of metals with lower work functions, it is found that the low work function metal with smaller atomic number (lighter atomic weight) has a limited effect of resisting damage caused by high-energy particle bombardment, while the low work function metal with larger atomic number (heavier atomic weight) and especially with atomic number larger than 20 has a better effect of resisting high-energy particle bombardment.

摘要：【中文】本发明公开了一种ESD防护结构、制备方法及显示装置。本发明通过将ESD防护结构与待保护线路及显示器外围电路连接，其中，ESD防护结构的衬底、第一半导体层、栅极绝缘层及导电栅极层依次层叠设置；第一半导体层包括源漏极区域及沟道区域；中间介电层设置于导电栅极层远离栅极绝缘层的一侧；第二半导体层依次穿过中间介电层及栅极绝缘层与源漏极区域连接，形成第一二极管及第二二极管；第一半导体层、栅极绝缘层、导电栅极层形成第一晶体管和第二晶体管，较现有技术中四个晶体管的ESD防护结构体积要小，并且可以起到静电放电防护的作用，更利于窄边框显示器的设计。 【EN】The invention discloses an ESD protection structure, a preparation method and a display device. The ESD protection structure is connected with a circuit to be protected and a peripheral circuit of a display, wherein a substrate, a first semiconductor layer, a grid electrode insulating layer and a conductive grid electrode layer of the ESD protection structure are sequentially stacked; the first semiconductor layer comprises a source drain region and a channel region; the intermediate dielectric layer is arranged on one side of the conductive grid layer far away from the grid insulating layer; the second semiconductor layer sequentially penetrates through the middle dielectric layer and the grid electrode insulating layer to be connected with the source drain electrode region to form a first diode and a second diode; the first semiconductor layer, the grid insulating layer and the conductive grid layer form a first transistor and a second transistor, and compared with an ESD protection structure of four transistors in the prior art, the ESD protection structure is small in size, can play a role in electrostatic discharge protection, and is more beneficial to the design of a narrow-frame display.

摘要：【中文】本发明涉及一种薄膜晶体管及其制作方法、显示模组及显示器件。通过在栅极的两端设置与源极和漏极欧姆接触的第一有源层和第二有源层，因而在栅极的两端各具有一条沟道，两条沟道并联使用，在栅极加载阈值电压后，并联起来的两条沟道可以同时开启，同时有电流通过，相当于通过三维空间增加了沟道的宽度，提高了沟道的宽长比。根据薄膜晶体管在饱和区工作时的电流公式，沟道宽度越宽，开启电流越大，双沟道结构可以显著提高薄膜晶体管的驱动能力，进而有利于提高其迁移率和开态电流。并且由于两条沟道都能起到驱动作用，即使其中一个沟道因制程不良等原因无法工作，另一个沟道也可以补充该不足，从而器件稳定性也得以显著提高。 【EN】The invention relates to a thin film transistor, a manufacturing method of the thin film transistor, a display module and a display device. The first active layer and the second active layer which are in ohmic contact with the source electrode and the drain electrode are arranged at the two ends of the grid electrode, so that two channels are arranged at the two ends of the grid electrode respectively and are used in parallel, after threshold voltage is loaded on the grid electrode, the two channels which are connected in parallel can be simultaneously opened, current passes through the channels at the same time, namely, the width of the channels is increased through a three-dimensional space, and the width-length ratio of the channels is improved. According to a current formula of the thin film transistor in a saturation region, the wider the channel width is, the larger the opening current is, and the driving capability of the thin film transistor can be remarkably improved by the double-channel structure, so that the mobility and the opening current of the thin film transistor can be improved. And because two channels can play a driving role, even if one channel can not work due to poor manufacturing process and other reasons, the other channel can also supplement the deficiency, thereby obviously improving the stability of the device.