摘要：【中文】一些实施例涉及用于制造存储器件的方法。该方法包括形成设置在介电层上方的第一掩模层，第一掩模层具有侧壁，该侧壁限定设置在位于嵌入式存储区域中的磁阻式随机存取存储器(MRAM)单元之上的开口。实施第一蚀刻以在MRAM单元之上的介电层内形成第一通孔开口。在MRAM单元和介电层上方形成顶部电极通孔层。对顶部电极通孔层实施第一平坦化工艺以去除顶部电极通孔层的一部分并且限定具有基本平坦顶面的顶部电极通孔。本发明的实施例还涉及集成电路。 【EN】Some embodiments relate to a method for manufacturing a memory device. The method includes forming a first mask layer disposed over a dielectric layer, the first mask layer having sidewalls that define an opening disposed over a Magnetoresistive Random Access Memory (MRAM) cell located in an embedded memory region. A first etch is performed to form a first via opening within the dielectric layer over the MRAM cell. A top electrode via layer is formed over the MRAM cells and the dielectric layer. A first planarization process is performed on the top electrode via layer to remove a portion of the top electrode via layer and define a top electrode via having a substantially planar top surface. Embodiments of the invention also relate to integrated circuits.