当前查询到17条专利与查询词 "Wang Xuege"相关,搜索用时0.2968672秒!排序方式:
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申请号:201810990974.7 公开号:CN110867497A 主分类号:H01L31/18
摘要:【中文】本发明实施例涉及光伏领域,公开了一种薄膜太阳能电池的处理方法及装置。本发明中,薄膜太阳能电池的处理方法包括:形成包含有衬底、硫化镉层和光吸收层的叠层;将所述叠层放入加热器中,对所述叠层进行快速热处理。本发明提供的薄膜太阳能电池的处理方法及装置,能够提高电池性能。 【EN】The embodiment of the invention relates to the field of photovoltaics, and discloses a method and a device for processing a thin-film solar cell. In the invention, the processing method of the thin film solar cell comprises the following steps: forming a stack layer including a substrate, a cadmium sulfide layer, and a light absorbing layer; placing the laminate in a heater and subjecting the laminate to rapid thermal processing. The thin film solar cell processing method and device provided by the invention can improve the cell performance.
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申请号:201810943260.0 公开号:CN110890431A 主分类号:H01L31/0216
摘要:【中文】本发明涉及一种薄膜太阳能电池,电池窗口层上设置有减反层,所述减反层为具有凸出部和/或凹陷部的纳米结构阵列层。所述纳米结构阵列层的材料是折射率与窗口层材料相近的金属氧化物、金属氮化物或聚合物的一种或多种,具体结构为纳米柱、纳米锥、纳米管、纳米点或纳米坑。本发明在薄膜太阳能电池窗口层表面制备纳米结构减反射层,并限定了减反射层的材质以及形状,从而有效减少表面反射、提高电池光电转换效率。 【EN】The invention relates to a thin film solar cell.A cell window layer is provided with an antireflection layer which is a nanostructure array layer with a convex part and/or a concave part. The nano-structure array layer is made of one or more of metal oxide, metal nitride or polymer with the refractive index similar to that of the window layer material, and the specific structure is a nano column, a nano cone, a nano tube, a nano point or a nano pit. According to the invention, the nanostructure antireflection layer is prepared on the surface of the window layer of the thin-film solar cell, and the material and the shape of the antireflection layer are limited, so that the surface reflection is effectively reduced, and the photoelectric conversion efficiency of the cell is improved.
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申请号:201811042868.2 公开号:CN110885974A 主分类号:C23C18/00
摘要:【中文】本发明提供一种化学水浴沉积装置,包括:水浴锅;加热丝,环绕水浴锅的内侧壁设置或环绕水浴锅的内侧壁和底部设置。可见,本发明实施例将加热丝的加热方式由底部加热方式改进为了四周环形加热方式,或在加热丝的现有加热方式的基础上增加了四周环形加热方式,这样一方面能够增大加热面积,另一方面能够保证水浴锅的不同高度处的温度均匀性。由于加热面积的增大,本发明实施例中的水浴加热速度能够得到提升,这样能够提高薄膜沉积效率。由于不同高度处的温度均匀性得到保证,本发明实施例能够避免不同高度处的温差过大而对薄膜沉积过程造成不良的影响,以为薄膜材料的沉积创造一个更良好的外部水浴环境,从而提高沉积的薄膜质量。 【EN】The invention provides a chemical water bath deposition device, which comprises: a water bath kettle; the heating wire is arranged around the inner side wall of the water bath kettle or arranged around the inner side wall and the bottom of the water bath kettle. Therefore, the embodiment of the invention improves the heating mode of the heating wire from the bottom heating mode to the peripheral annular heating mode, or adds the peripheral annular heating mode on the basis of the existing heating mode of the heating wire, so that the heating area can be increased on one hand, and the temperature uniformity of different heights of the water bath can be ensured on the other hand. Due to the increase of the heating area, the water bath heating speed in the embodiment of the invention can be improved, so that the film deposition efficiency can be improved. Because the temperature uniformity at different heights is ensured, the embodiment of the invention can avoid the adverse effect on the film deposition process caused by overlarge temperature difference at different heights, and create a better external water bath environment for the deposition of the film material, thereby improving the quality of the deposited film.
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申请号:201811031887.5 公开号:CN110880460A 主分类号:H01L21/67
摘要:【中文】本申请提供一种太阳能电池的制备方法及其制备装置。所述太阳能电池的制备方法包括以下步骤。第一步,提供一柔性衬底。第二步,在所述柔性衬底表面制备背电极层。第三步,在所述背电极层远离所述柔性衬底的表面制备吸收层。第四步,在所述吸收层远离所述背电极层的表面制备缓冲层。第五步,在所述缓冲层远离所述吸收层的表面制备高阻层。第六步,在所述高阻层远离所述缓冲层的表面制备窗口层,所述窗口层包括氧化铟锡层和设置于所述氧化铟锡层远离所述高阻层表面的掺铝氧化锌层。第七步,利用湿法刻蚀将所述掺铝氧化锌层刻蚀形成间隔设置的陷光结构。 【EN】The application provides a preparation method and a preparation device of a solar cell. The preparation method of the solar cell comprises the following steps. In a first step, a flexible substrate is provided. And secondly, preparing a back electrode layer on the surface of the flexible substrate. And thirdly, preparing an absorption layer on the surface of the back electrode layer far away from the flexible substrate. And fourthly, preparing a buffer layer on the surface of the absorption layer far away from the back electrode layer. And fifthly, preparing a high-resistance layer on the surface of the buffer layer far away from the absorption layer. And sixthly, preparing a window layer on the surface of the high-resistance layer far away from the buffer layer, wherein the window layer comprises an indium tin oxide layer and an aluminum-doped zinc oxide layer arranged on the surface of the indium tin oxide layer far away from the high-resistance layer. And seventhly, etching the aluminum-doped zinc oxide layer by using wet etching to form light trapping structures arranged at intervals.
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申请号:201811098022.0 公开号:CN110931582A 主分类号:H01L31/048
摘要:【中文】本发明提供了一种太阳能电池前板及其制作方法。所述太阳能电池前板包括所述基底层、所述黏附层以及所述汇流层。所述黏附层设置于所述基底层一侧的表面,且覆盖所述基底层。所述汇流层设置于所述黏附层背向所述基底层的表面,用于收集太阳能电池负极的电荷。本发明中,通过在所述太阳能电池前板中设置所述汇流层收集太阳能电池负极的电荷,以使后续只需要简单的贴合串联工艺,即可实现太阳能电池片的串联,简化了太阳能电池片的串联工艺。 【EN】The invention provides a solar cell front plate and a manufacturing method thereof. The solar cell front plate comprises the substrate layer, the adhesion layer and the bus layer. The adhesion layer is arranged on the surface of one side of the substrate layer and covers the substrate layer. The confluence layer is arranged on the surface of the adhesion layer, which is back to the substrate layer, and is used for collecting charges of the negative electrode of the solar cell. In the invention, the charge of the negative electrode of the solar cell is collected by arranging the confluence layer in the front plate of the solar cell, so that the series connection of the solar cells can be realized only by a simple laminating series connection process in the following process, and the series connection process of the solar cells is simplified.
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申请号:201811166785.4 公开号:CN111009473A 主分类号:H01L21/383
摘要:【中文】本发明提供一种铜铟镓硒太阳能电池光吸收层的的掺杂方法,在衬底沉积背电极;在所述衬底用于形成所述铜铟镓硒光吸收层的一侧,沿所述衬底卷绕的方向设置第一蒸发部和第二蒸发部,其中,所述第一蒸发部由铜蒸发源、铟蒸发源、镓蒸发源和硒蒸发源组成,所述第二蒸发部由氟化钾蒸发源组成,所述第二蒸发部与所述第一蒸发部间隔预设距离;对所述衬底进行放卷和收卷操作,以使得:所述衬底移动至所述第一蒸发部,控制所述第一蒸发部蒸发,在所述背电极沉积形成铜铟镓硒光吸收层;以及所述衬底移动至所述第二蒸发部,控制所述第二蒸发部蒸发,以在所述铜铟镓硒光吸收层上沉积氟化钾。这样可以提升铜铟镓硒太阳能电池的光电转换效率。 【EN】The invention provides a doping method of a light absorption layer of a copper indium gallium selenide solar cell, which comprises the steps of depositing a back electrode on a substrate; arranging a first evaporation part and a second evaporation part along the winding direction of the substrate on one side of the substrate for forming the copper indium gallium selenide light absorption layer, wherein the first evaporation part comprises a copper evaporation source, an indium evaporation source, a gallium evaporation source and a selenium evaporation source, the second evaporation part comprises a potassium fluoride evaporation source, and the second evaporation part is separated from the first evaporation part by a preset distance; unwinding and winding the substrate such that: the substrate moves to the first evaporation part, the first evaporation part is controlled to evaporate, and a copper indium gallium selenide light absorption layer is formed on the back electrode in a deposition mode; and the substrate moves to the second evaporation part, and the second evaporation part is controlled to evaporate so as to deposit potassium fluoride on the CIGS light absorption layer. Therefore, the photoelectric conversion efficiency of the CIGS solar cell can be improved.
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申请号:201811167139.X 公开号:CN111029412A 主分类号:H01L31/0216
摘要:【中文】本发明提供一种铜铟镓硒太阳能电池光吸收层的掺杂方法,包括:在衬底沉积背电极;在所述背电极上形成铜铟镓硒光吸收层;待所述衬底的温度处于第一预设温度后,在所述铜铟镓硒光吸收层上沉积碱金属氟化物,其中,所述第一预设温度大于或等于300℃,且小于等于400℃。这样可以有效减少碱金属氟化物在高温下与铜铟镓硒光吸收层表面的原子或原子团反应而生成其他化合物,即减少了铜铟镓硒光吸收层的表面形成的杂质,提高pn结的品质,进而提升铜铟镓硒太阳能电池的光电转换效率。 【EN】The invention provides a doping method of a light absorption layer of a copper indium gallium selenide solar cell, which comprises the following steps: depositing a back electrode on the substrate; forming a copper indium gallium selenide light absorption layer on the back electrode; and depositing alkali metal fluoride on the CIGS light absorption layer after the temperature of the substrate is at a first preset temperature, wherein the first preset temperature is more than or equal to 300 ℃ and less than or equal to 400 ℃. Therefore, the generation of other compounds caused by the reaction of the alkali metal fluoride and atoms or atomic groups on the surface of the CIGS light absorption layer at high temperature can be effectively reduced, namely, impurities formed on the surface of the CIGS light absorption layer are reduced, the quality of a pn junction is improved, and the photoelectric conversion efficiency of the CIGS solar cell is improved.
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申请号:201811174924.8 公开号:CN111014346A 主分类号:B21D1/00
摘要:【中文】本申请公开了一种用于提升不锈钢表面平整度的温控装置、方法及镀膜设备,温控装置包括控制机构、加热加压机构、控温机构和冷却机构;加热加压机构用于对设置有发电薄膜的不锈钢进行加热加压;控温机构用于对加热后的不锈钢进行缓慢降温;冷却机构用于对缓慢降温的不锈钢进行冷却降温;控制机构与加热加压机构、控温机构和冷却机构连接。本发明通过加热加压机构将不锈钢在高温拉扯中表面产生的褶皱和翘曲等变形压制平整;通过控温机构对不锈钢进行缓慢降温,防止温度骤降时对不锈钢内应力产生影响,降低不锈钢开裂现象的产生;然后通过冷却装置对不锈钢进行冷却降温使不锈钢处于室温温度,处于室温温度的不锈钢便于收卷。 【EN】The application discloses a temperature control device, a method and coating equipment for improving the surface flatness of stainless steel, wherein the temperature control device comprises a control mechanism, a heating and pressurizing mechanism, a temperature control mechanism and a cooling mechanism; the heating and pressurizing mechanism is used for heating and pressurizing the stainless steel provided with the power generation film; the temperature control mechanism is used for slowly cooling the heated stainless steel; the cooling mechanism is used for cooling the stainless steel which is slowly cooled; the control mechanism is connected with the heating and pressurizing mechanism, the temperature control mechanism and the cooling mechanism. The invention presses and flattens the deformation such as wrinkles, warpage and the like generated on the surface of the stainless steel in high-temperature pulling through the heating and pressurizing mechanism; the temperature control mechanism is used for slowly cooling the stainless steel, so that the influence on the internal stress of the stainless steel during sudden temperature drop is prevented, and the cracking phenomenon of the stainless steel is reduced; then the stainless steel is cooled by a cooling device to be at the room temperature, and the stainless steel at the room temperature is convenient to roll.
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申请号:201811425943.3 公开号:CN111223758A 主分类号:H01L21/02
摘要:【中文】本发明公开了一种铜铟镓硒薄膜太阳能电池及其制备方法,包括:提供衬底基板,在所述衬底基板上制备背电极层;在所述背电极层上制备光吸收层;将碱金属氟化物与铟、硒进行共蒸发,从而在所述光吸收层的表面沉积掺杂层;在所述掺杂层上依次制备缓冲层、窗口层和顶电极层。本发明实施例提供的太阳能电池及其制备方法将碱金属氟化物与铟、硒进行共蒸发,由于额外提供了足够的铟、硒参与光吸收层的表面反应,因此碱金属氟化物的蒸发速率可以有效提高。 【EN】The invention discloses a copper indium gallium selenide thin-film solar cell and a preparation method thereof, wherein the preparation method comprises the following steps: providing a substrate, and preparing a back electrode layer on the substrate; preparing a light absorbing layer on the back electrode layer; co-evaporating alkali metal fluoride with indium and selenium to deposit a doped layer on the surface of the light absorbing layer; and sequentially preparing a buffer layer, a window layer and a top electrode layer on the doping layer. According to the solar cell and the preparation method thereof provided by the embodiment of the invention, the alkali metal fluoride, the indium and the selenium are subjected to co-evaporation, and because sufficient indium and selenium are additionally provided to participate in the surface reaction of the light absorption layer, the evaporation rate of the alkali metal fluoride can be effectively improved.
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申请号:201811286286.9 公开号:CN111129206A 主分类号:H01L31/18
摘要:【中文】本发明公开了一种CIGS薄膜太阳电池的制备方法,包括:在基底上沉积Mo电极层;在所述基底带有Mo电极的一面共蒸发沉积In、Ga、Se,并同时蒸发碱金属氟化物,形成第一化合物层;在所述第一化合物层上共蒸发Cu、Se,形成第二化合物层;在所述第二化合物层上再次共蒸发In、Ga、Se,形成CIGS表面层。本发明在前段将碱金属掺入,能够更好的提高吸收层的载流子浓度,且对电池性能的改善作用更加明显。 【EN】The invention discloses a preparation method of a CIGS thin film solar cell, which comprises the following steps: depositing a Mo electrode layer on a substrate; co-evaporation and deposition of In, Ga and Se on one surface of the substrate with the Mo electrode, and evaporation of alkali metal fluoride simultaneously to form a first compound layer; co-evaporating Cu and Se on the first compound layer to form a second compound layer; and co-evaporating In, Ga and Se again on the second compound layer to form a CIGS surface layer. According to the invention, alkali metal is doped in the front section, so that the carrier concentration of the absorption layer can be better improved, and the improvement effect on the battery performance is more obvious.
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