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1:
[发明]
【中文】一种具有帐篷状结构的氧化石墨烯膜及其制备方法与应用 【EN】Graphene oxide film with tent-like structure and preparation method and application thereof
申请号:
201910969276.3
公开号:CN110860215A 主分类号:B01D71/02
申请人:
【中文】浙江大学【EN】ZHEJIANG University
申请日:2019.10.12 公开日:2020.03.06
发明人:
【中文】陈宝梁
;
杨凯杰【EN】Chen Baoliang
;
Yang Kaijie
摘要:【中文】本发明公开了一种具有帐篷状纳米结构的氧化石墨烯膜及其制备方法与应用。本发明建立了改进的过滤组装法,实现了超薄氧化石墨烯膜在柔性基底上的可靠制备。通过将纳米颗粒插层到超薄结构内部,实现了超薄结构中帐篷状纳米结构的构建。特殊的纳米帐篷状结构能在保留截留性能的前提下,实现水通量的最大化。通过纳米颗粒插层比例的调节,该膜的筛分通道可实现分子尺度上的调控,并能选择性分离相似尺寸的小分子。该膜在不同pH水溶液中结构稳定,且膜的表面粗糙度、可润湿性及表面电性可调。该膜优异的分离性能,以及可调的结构与性质,使其在环境污染治理领域及膜分离技术领域有很广泛的应用前景。 【EN】The invention discloses a graphene oxide film with a tent-shaped nano structure, and a preparation method and application thereof. The invention establishes an improved filtration assembly method and realizes the reliable preparation of the ultrathin graphene oxide film on the flexible substrate. By intercalating the nanoparticles inside the ultra-thin structure, the construction of a tent-like nanostructure in the ultra-thin structure is achieved. The special nano tent-like structure can realize the maximization of water flux on the premise of retaining the interception performance. By adjusting the intercalation proportion of the nano particles, the sieving channel of the membrane can realize the regulation and control on the molecular scale and can selectively separate small molecules with similar sizes. The film has stable structure in water solutions with different pH values, and the surface roughness, wettability and surface electrical property of the film are adjustable. The membrane has excellent separation performance, and adjustable structure and property, so that the membrane has wide application prospect in the field of environmental pollution treatment and the technical field of membrane separation.
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2:
[发明]
【中文】一种基于大数据处理的报表生成方法 【EN】Report generation method based on big data processing
申请号:
201911231359.9
公开号:CN111061732A 主分类号:G06F16/22
申请人:
【中文】深圳迅策科技有限公司【EN】SHENZHEN XUNCE TECHNOLOGY Co.,Ltd.
申请日:2019.12.05 公开日:2020.04.24
发明人:
【中文】杨阳
;
贺璟璐
;
向开杰【EN】Yang Yang
;
He Jinglu
;
Xiang Kaijie
摘要:【中文】本发明涉及报表生成方法技术领域,且公开了一种基于大数据处理的报表生成方法,包括数据采集,所述数据采用使用ETL技术,通过ETL分析和处理各个进行系统中的数据,在对信息进行合法性和完整性等数据清洗后,将数据转换成原始报表,通过展示层、接入层、服务层和资源层的四层系统架构,改变了传统的处理模式,使用原始库到基础库、结果库和报送库四层数据库方式进行数据的报送服务,进一步的提高了数据采集和维护的效率,转换完成的原始报表经过数据稽核后输出统计结果,生成报表,最后经过数据审批后报送至监管机构,本发明程序简单,自动化程度高,解决了传统报表生成方法效率低下的问题,具有报表生成高效化的优点。 【EN】The invention relates to the technical field of report generation methods, and discloses a report generation method based on big data processing, which comprises data acquisition, wherein the data is acquired by using an ETL technology, the data in each system is analyzed and processed through the ETL, after the data such as the legality and the integrity of information is cleaned, the data is converted into an original report, the traditional processing mode is changed through a four-layer system architecture of a display layer, an access layer, a service layer and a resource layer, the data is submitted and sent in a four-layer database mode from an original library to a base library, a result library and a submitting library, the efficiency of data acquisition and maintenance is further improved, the converted original report is subjected to data audit and then outputs a statistical result to generate a report, and finally the report is submitted to a supervision mechanism after data approval, the invention has simple program and high automation degree, and solves the problem of low efficiency of the traditional report generation method, the method has the advantage of high efficiency of report generation.
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3:
[发明]
【中文】多场景通用的边缘视觉运动控制系统及方法 【EN】Multi-scene universal edge vision motion control system and method
申请号:
202010010057.5
公开号:CN111142445A 主分类号:G05B19/042
申请人:
【中文】上海交通大学【EN】SHANGHAI JIAO TONG University
申请日:2020.01.06 公开日:2020.05.12
发明人:
【中文】谷朝臣
;
杨舒盛
;
吴开杰【EN】Gu Chaochen
;
Yang Shusheng
;
Wu Kaijie
摘要:【中文】本发明提供了一种多场景通用的边缘视觉运动控制系统及方法,包括:智能传感模块:采集视野内的光像并进行光电信号转换,得到信号和图像,同时进行图像预处理;视觉计算模块:根据自定义的视觉算法处理信号和图像,得到视觉控制指令和运动控制指令;运动控制模块:根据运动控制指令,完成自定义多轴插补计算、运动控制指令分发以及其他控制执行指令下发;存储模块:对信号、图像、视觉算法和控制算法进行存储,以及外部存储介质信息的读写;用户交互模块:进行图像显示和传输。本发明实现数据流水线处理,更高的时间同步精度和预测控制;提高了视觉运动控制系统的可靠性及稳定性,通过无线下载扩展了视觉运动控制系统的算法柔性和边缘端应用场景。 【EN】The invention provides a multi-scene universal edge vision motion control system and a method thereof, wherein the system comprises: the intelligent sensing module: collecting an optical image in a visual field, performing photoelectric signal conversion to obtain a signal and an image, and simultaneously performing image preprocessing; a vision calculation module: processing the signals and the images according to a self-defined visual algorithm to obtain a visual control instruction and a motion control instruction; a motion control module: according to the motion control instruction, completing user-defined multi-axis interpolation calculation, motion control instruction distribution and other control execution instruction issuing; a storage module: storing signals, images, visual algorithms and control algorithms, and reading and writing external storage medium information; a user interaction module: and displaying and transmitting the image. The invention realizes the data pipeline processing, and has higher time synchronization precision and prediction control; the reliability and the stability of the visual motion control system are improved, and the algorithm flexibility and the edge end application scene of the visual motion control system are expanded through wireless downloading.
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4:
[发明]
【中文】半导体结构的形成方法 【EN】Method for forming semiconductor structure
申请号:
201910925853.9
公开号:CN110957355A 主分类号:H01L29/41
申请人:
【中文】台湾积体电路制造股份有限公司【EN】Taiwan Semiconductor Manufacturing Company, Ltd.
申请日:2019.09.27 公开日:2020.04.03
发明人:
【中文】杨哲育
;
杨凯杰
;
蔡庆威
;
程冠伦【EN】Yang Zheyu
;
Yang Kaijie
;
Cai Qingwei
;
Cheng Guanlun
摘要:【中文】半导体结构的形成方法、半导体装置与其制造方法在此被公开。一种示例的半导体装置包含半导体鳍设置在基材上,其中半导体鳍包含通道区域与源极/漏极区域;栅极结构设置在半导体鳍的通道区域上,其中栅极结构包含栅极间隔与栅极堆叠;源极/漏极结构设置在半导体鳍的源极/漏极区域上;以及鳍顶硬遮罩垂直插入栅极间隔与半导体鳍之间,其中鳍顶硬遮罩包含介电层,其中鳍顶硬遮罩的侧壁与栅极堆叠直接接触,鳍顶硬遮罩的另一侧壁与源极/漏极结构直接接触。 【EN】Methods of forming semiconductor structures, semiconductor devices and methods of fabricating the same are disclosed herein. An exemplary semiconductor device includes a semiconductor fin disposed on a substrate, wherein the semiconductor fin includes a channel region and source/drain regions; a gate structure disposed on the channel region of the semiconductor fin, wherein the gate structure includes a gate spacer and a gate stack; a source/drain structure disposed on the source/drain region of the semiconductor fin; and a top-fin hardmask vertically interposed between the gate spacer and the semiconductor fin, wherein the top-fin hardmask includes a dielectric layer, wherein a sidewall of the top-fin hardmask is in direct contact with the gate stack and another sidewall of the top-fin hardmask is in direct contact with the source/drain structure.
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5:
[发明]
【中文】半导体器件及其形成方法 【EN】Semiconductor device and method of forming the same
申请号:
201911202741.7
公开号:CN111261521A 主分类号:H01L21/336
申请人:
【中文】台湾积体电路制造股份有限公司【EN】Taiwan Semiconductor Manufacturing Company, Ltd.
申请日:2019.11.29 公开日:2020.06.09
发明人:
【中文】廖翊博
;
杨凯杰
;
蔡庆威
;
程冠伦【EN】Liao Yibo
;
Yang Kaijie
;
Cai Qingwei
;
Cheng Guanlun
摘要:【中文】在实施例中,形成半导体器件的方法包括:在衬底中形成第一凹槽和第二凹槽;在第一凹槽中生长第一外延材料堆叠件,该第一外延材料堆叠件包括第一半导体材料和第二半导体材料的交替层,第一外延材料堆叠件的层是未掺杂的;在第二凹槽中生长第二外延材料堆叠件,该第二外延材料堆叠件包括第一半导体材料和第二半导体材料的交替层,第二外延材料堆叠件的第一子集是未掺杂的,第二外延材料堆叠件的第二子集是掺杂的;图案化第一外延材料堆叠件和第二外延材料堆叠件,以分别形成第一纳米线和第二纳米线;以及围绕第一纳米线形成第一栅极结构,围绕第二纳米线形成第二栅极结构。本发明的实施例还涉及半导体器件。 【EN】In an embodiment, a method of forming a semiconductor device includes: forming a first groove and a second groove in a substrate; growing a first epitaxial material stack in the first recess, the first epitaxial material stack comprising alternating layers of a first semiconductor material and a second semiconductor material, the layers of the first epitaxial material stack being undoped; growing a second epitaxial material stack in the second recess, the second epitaxial material stack comprising alternating layers of the first semiconductor material and the second semiconductor material, a first subset of the second epitaxial material stack being undoped and a second subset of the second epitaxial material stack being doped; patterning the first epitaxial material stack and the second epitaxial material stack to form a first nanowire and a second nanowire, respectively; and forming a first gate structure around the first nanowire and a second gate structure around the second nanowire. Embodiments of the invention also relate to semiconductor devices.
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6:
[发明]
【中文】一种具有转向定位组件的电气柜装置及其工作方法 【EN】Electrical cabinet device with steering positioning assembly and working method thereof
申请号:
202010153433.6
公开号:CN111146717A 主分类号:H02B1/56
申请人:
【中文】淮阴师范学院【EN】HUAIYIN NORMAL University
申请日:2020.03.06 公开日:2020.05.12
发明人:
【中文】熊树
;
杨裕翠
;
周凯杰
;
朱珠【EN】Xiong Shu
;
Yang Yucui
;
Zhou Kaijie
;
Zhu Zhu
摘要:【中文】本发明公开了一种具有转向定位组件的电气柜装置及其工作方法,包括第一电气柜体,所述第一电气柜体的下端固定连接有第二电气柜体,所述第一电气柜体与第二电气柜体之间固定安装有隔离柱,本发明通过设置的连接柱、排线板和排线管的配合使用,可以提供电气柜体内更多设备的安装空间和合理分布,通过将电路板上的安装的设备连接线通过排线管和排线板的配合使用,可以有效将连接线防护起来,避免对柜门的频繁开关将暴露在柜门上的连接线造成损坏,提高了连接线的使用寿命和设备的使用效率,通过设置的防护块、防护板和连接板的配合使用,可以将电气柜的上端进行防护,既可以消除异物在电气柜上端的堆积污染,又可以提高电气柜内部的散热效果。 【EN】The invention discloses an electrical cabinet device with a steering positioning assembly and a working method thereof, and the electrical cabinet device comprises a first electrical cabinet body, wherein the lower end of the first electrical cabinet body is fixedly connected with a second electrical cabinet body, and an isolation column is fixedly arranged between the first electrical cabinet body and the second electrical cabinet body. Not only can eliminate the accumulation and pollution of foreign matters at the upper end of the electrical cabinet, but also can improve the heat dissipation effect inside the electrical cabinet.
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7:
[发明]
【中文】一种次级电子发射薄膜材料的高效简易制备方法 【EN】Efficient and simple preparation method of secondary electron emission thin film material
申请号:
201911306771.2
公开号:CN110923667A 主分类号:C23C16/40
申请人:
【中文】北京工业大学【EN】Beijing University of Technology
申请日:2019.12.18 公开日:2020.03.27
发明人:
【中文】王金淑
;
王蕊
;
周帆
;
梁轩铭
;
杨韵斐
;
骆凯捷
;
李世磊【EN】Wang Jinshu
;
Wang Rui
;
Zhou Fan
;
Liang Xuanming
;
Yang Yunfei
;
Luo Kaijie
;
Li Shilei
摘要:【中文】一种次级电子发射薄膜材料的高效简易制备方法,属于薄膜材料的制备技术领域。以表面光滑平整的硅片、银片、FTO玻璃为基底材料,以乙酸镁和乙酸锌作为主要前驱体物,氮气作为载气,在对基底加热的条件下,通过气凝胶化学气相沉积结合高温退火,制备获得MgO/MgO‑ZnO薄膜。采用本发明方法制备次级发射薄膜材料具有制备工艺简单、成本低、掺杂元素和膜厚可控、成分均匀、次级发射系数高、耐电子轰击且发射性能稳定等优点。有望应用于多种光电倍增管、图像增加器、等离子显示器等器件中。 【EN】A high-efficiency simple preparation method of a secondary electron emission thin film material belongs to the technical field of thin film material preparation. The preparation method comprises the steps of taking a silicon wafer, a silver sheet and FTO glass with smooth and flat surfaces as substrate materials, taking magnesium acetate and zinc acetate as main precursor substances, taking nitrogen as carrier gas, and preparing the MgO/MgO-ZnO film by combining aerogel chemical vapor deposition with high-temperature annealing under the condition of heating the substrate. The method for preparing the secondary emission thin film material has the advantages of simple preparation process, low cost, controllable doping elements and film thickness, uniform components, high secondary emission coefficient, electron bombardment resistance, stable emission performance and the like. Is expected to be applied to various devices such as photomultiplier tubes, image intensifiers and plasma displays.
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8:
[发明]
【中文】半导体装置 【EN】Semiconductor device with a plurality of semiconductor chips
申请号:
201910895176.0
公开号:CN110957350A 主分类号:H01L29/06
申请人:
【中文】台湾积体电路制造股份有限公司【EN】Taiwan Semiconductor Manufacturing Company, Ltd.
申请日:2019.09.20 公开日:2020.04.03
发明人:
【中文】杨凯杰
;
庄礼阳
;
王培宇
;
李韦儒
;
蔡庆威
;
程冠伦【EN】
Yang Kaijie
;
Zhuang Liyang
;
Wang Peiyu
;
Li Weiru
;
Cai Qingwei
;
Cheng Guanlun
摘要:【中文】本发明实施例公开了一种半导体装置与其形成方法,一实施例的半导体装置包括:p型场效应晶体管与n型场效应晶体管。p型场效应晶体管包括:第一栅极结构,形成于基板上;第一间隔物,位于第一栅极结构的侧壁上;以及非应变间隔物,位于第一间隔物的侧壁上。n型场效应晶体管包括:第二栅极结构,形成于基板上;第一间隔物,位于第二栅极结构的侧壁上;以及应变间隔物,位于第一间隔物的侧壁上。 【EN】The embodiment of the invention discloses a semiconductor device and a forming method thereof, wherein the semiconductor device of the embodiment comprises: p-type field effect transistors and n-type field effect transistors. The p-type field effect transistor includes: a first gate structure formed on the substrate; a first spacer on a sidewall of the first gate structure; and a non-strained spacer on sidewalls of the first spacer. The n-type field effect transistor includes: the second grid structure is formed on the substrate; a first spacer on a sidewall of the second gate structure; and a strained spacer on sidewalls of the first spacer.
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9:
[发明]
【中文】一种可高效散热的储能电池散热支架 【EN】Energy storage battery heat dissipation support capable of efficiently dissipating heat
申请号:
201911138812.1
公开号:CN111029496A 主分类号:H01M2/10
申请人:
【中文】江苏科技大学【EN】JIANGSU UNIVERSITY OF SCIENCE AND TECHNOLOGY
申请日:2019.11.20 公开日:2020.04.17
发明人:
【中文】施红
;
胡亮春
;
朱信龙
;
邹燚涛
;
杨凯杰
;
徐文冰
;
陈佳敏【EN】Shi Hong
;
Hu Liangchun
;
Zhu Xinlong
;
Zou Yitao
;
Yang Kaijie
;
Xu Wenbing
;
Chen Jiamin
摘要:【中文】本发明公开一种可高效散热的储能电池散热支架,包括支架本体、强制通风模块、水冷散热底盘模块和流场控制装置模块,强制通风模块包括通风管道、进风口和出风口,在每个通风管道内连接一个所述流场控制装置模块;水冷散热底盘模块设在支架本体底部。该散热支架上综合了风冷和水冷两种冷却模式,冷却效果提升,且将通风管道与支架本体设计一体化,不需再另设风道,通风管道中的导流板位置和角度可在不同的工况下灵活调节,满足了储能电池冷却所需的风量并保证了在各工况下风道送风的均匀性;可通过通风管道两端公母口的配合进行多支架模块的叠加安装,实现了热管理结构模块化,结构紧凑,易拆装易集成。 【EN】The invention discloses an energy storage battery heat dissipation support capable of dissipating heat efficiently, which comprises a support body, a forced ventilation module, a water-cooling heat dissipation chassis module and a flow field control device module, wherein the forced ventilation module comprises ventilation pipelines, an air inlet and an air outlet, and one flow field control device module is connected in each ventilation pipeline; the water-cooling heat dissipation chassis module is arranged at the bottom of the bracket body. The heat dissipation bracket integrates two cooling modes of air cooling and water cooling, the cooling effect is improved, the ventilating duct and the bracket body are designed and integrated, an air duct is not required to be additionally arranged, the position and the angle of the flow guide plate in the ventilating duct can be flexibly adjusted under different working conditions, the air quantity required by cooling the energy storage battery is met, and the air supply uniformity of the air duct under each working condition is ensured; the multiple support modules can be stacked and installed through the matching of the male and female openings at the two ends of the ventilation pipeline, so that the modularization of the heat management structure is realized, the structure is compact, and the assembly and disassembly are easy to integrate.
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10:
[发明]
【中文】一种钨基扩散阴极的增材制造制备方法 【EN】Additive manufacturing method of tungsten-based diffusion cathode
申请号:
202010006398.5
公开号:CN111036914A 主分类号:B22F3/11
申请人:
【中文】北京工业大学【EN】Beijing University of Technology
申请日:2020.01.03 公开日:2020.04.21
发明人:
【中文】王金淑
;
骆凯捷
;
杨韵斐
;
周帆
;
梁轩铭
;
刘伟
;
陈树群【EN】Wang Jinshu
;
Luo Kaijie
;
Yang Yunfei
;
Zhou Fan
;
Liang Xuanming
;
Liu Wei
;
Chen Shuqun
摘要:【中文】一种钨基扩散阴极的增材制造制备方法,属于热阴极电子发射材料的制备技术领域,采用可三维立体成型的激光选区熔化(SLM)技术制备了阴极多孔钨基,并对激光能量与多孔钨基致密度的关系进行了研究。研究结果表明采用激光功率P=160W,扫描速度V=1600mm/s,扫描间距D=0.10mm的制备工艺能够获得相对密度为65.7%的阴极基体,且能够满足阴极后续制备加工的需求,其活性盐浸渍量达13%。对该阴极发射性能进行测试,结果显示该阴极发射性能能够达到传统钡钨阴极材料的发射性能。 【EN】A material increase manufacturing method of a tungsten-based diffusion cathode belongs to the technical field of preparation of hot cathode electron emission materials, a cathode porous tungsten base is prepared by adopting a Selective Laser Melting (SLM) technology capable of three-dimensional forming, and the relation between laser energy and the density of the porous tungsten base is researched. The research result shows that the cathode matrix with the relative density of 65.7 percent can be obtained by adopting the preparation process with the laser power P of 160W, the scanning speed V of 1600mm/s and the scanning distance D of 0.10mm, the requirements of subsequent preparation and processing of the cathode can be met, and the impregnation amount of the active salt reaches 13 percent. The emission performance of the cathode is tested, and the result shows that the emission performance of the cathode can reach the emission performance of the traditional barium-tungsten cathode material.
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