摘要：【中文】本发明涉及一种多媒体超薄户外防水显示器，包括依次平行设置的透明面板、显示屏和盖板，所述透明面板密封连接于主体框上，所述显示屏与所述主体框相连，所述盖板与所述主体框相连以罩设所述显示屏，所述显示屏电连接控制模块；所述盖板与所述显示屏之间至少设有一对与控制模块相连的风扇；该显示器还包括扬声器和后盖，所述后盖与所述盖板可拆卸地相连；该显示器还包括连接器和遮挡盖，所述遮挡盖分别与所述盖板和所述后盖可拆卸地相连，并使用密封剂填充所述盖板、所述后盖和所述遮挡盖的连接处的间隙，其中，所述后盖上还设有用于接收信号的通信模块。由此，可以解决现有技术中显示器防水性差和散热效果差的问题。 【EN】The invention relates to a multimedia ultrathin outdoor waterproof display which comprises a transparent panel, a display screen and a cover plate, wherein the transparent panel, the display screen and the cover plate are sequentially arranged in parallel, the transparent panel is hermetically connected onto a main body frame, the display screen is connected with the main body frame, the cover plate is connected with the main body frame to cover the display screen, and the display screen is electrically connected with a control module; at least one pair of fans connected with the control module is arranged between the cover plate and the display screen; the display also comprises a loudspeaker and a rear cover, wherein the rear cover is detachably connected with the cover plate; the display further comprises a connector and a shielding cover, wherein the shielding cover is detachably connected with the cover plate and the rear cover respectively, gaps among the connection positions of the cover plate, the rear cover and the shielding cover are filled with sealant, and a communication module used for receiving signals is further arranged on the rear cover. Therefore, the problems of poor waterproofness and poor heat dissipation effect of the display in the prior art can be solved.

摘要：【中文】本发明属于纳米材料技术领域，具体涉及一种复合材料及其制备方法和应用。所述复合材料包括二氧化硅包覆量子点，以及结合在所述二氧化硅包覆量子点表面的石墨烯纳米片；其中，所述二氧化硅包覆量子点包括量子点以及包覆在所述量子点表面的二氧化硅层，且所述石墨烯纳米片与所述二氧化硅层通过(O‑)₃Si‑R₁‑NHCO‑R₃‑CONH‑R₂‑Si(O‑)₃或(O‑)₃Si‑R₄‑SCH₂CH₂‑R₅‑Si(O‑)₃结合，R₁、R₂、R₄、R₅分别独立选自烃基或烃基衍生物，R₃选自烃基、烃基衍生物、芳基或芳基衍生物。该复合材料能够在不影响量子点的固有光学性能的前提下进一步提高量子点的稳定性，从而提高发光效率。 【EN】The invention belongs to the technical field of nano materials, and particularly relates to a composite material and a preparation method and application thereof. The composite material comprises silicon dioxide coated quantum dots and graphene nanosheets combined on the surfaces of the silicon dioxide coated quantum dots; wherein the silicon dioxide coated quantum dots comprise quantum dots and silicon dioxide layers coated on the surfaces of the quantum dots, and the graphene nanosheets and the silicon dioxide layers pass through (O-)₃Si‑R₁‑NHCO‑R₃‑CONH‑R₂‑Si(O‑)₃Or (O-)₃Si‑R₄‑SCH₂CH₂‑R₅‑Si(O‑)₃In combination with, R₁、R₂、R₄、R₅Each independently selected from hydrocarbyl or hydrocarbyl derivative, R₃Selected from alkyl, alkyl derivatives, aryl or aryl derivatives. The composite material can further improve the stability of the quantum dots on the premise of not influencing the inherent optical performance of the quantum dots, thereby improving the luminous efficiency.

摘要：【中文】本发明属于纳米材料技术领域，具体涉及一种量子点的制备方法。所述制备方法包括如下步骤：提供III族阳离子前驱体和配体，所述III族阳离子前驱体包括一种或多种金属卤化物前驱体；将所述III族阳离子前驱体和配体溶于溶剂中，在第一温度条件下进行加热处理，得到混合溶液；将所述混合溶液继续升温至第二温度，然后向所述混合溶液中加入V族阴离子前驱体，进行成核反应，得到III‑V族量子点核溶液。所述制备方法不仅技术稳定、工艺简单、成本低，有利于后期规模化制备，而且所制备的量子点具有更高的发光效率。 【EN】The invention belongs to the technical field of nano materials, and particularly relates to a preparation method of quantum dots. The preparation method comprises the following steps: providing a group III cation precursor and a ligand, the group III cation precursor comprising one or more metal halide precursors; dissolving the III-group cation precursor and the ligand in a solvent, and heating under a first temperature condition to obtain a mixed solution; and continuously heating the mixed solution to a second temperature, adding a V-group anion precursor into the mixed solution, and carrying out a nucleation reaction to obtain a III-V-group quantum dot nucleation solution. The preparation method has the advantages of stable technology, simple process, low cost and contribution to later-stage large-scale preparation, and the prepared quantum dots have higher luminous efficiency.

摘要：【中文】本发明属于纳米材料技术领域，具体涉及一种量子点的制备方法。所述制备方法包括如下步骤：提供III族阳离子前驱体和配体，将所述III族阳离子前驱体和配体溶于溶剂中，在第一温度条件下进行加热处理，得到混合溶液；将所述混合溶液继续升温至第二温度，然后向所述混合溶液中加入V族阴离子前驱体，进行成核反应，得到III‑V族量子点核溶液。所述制备方法技术稳定、工艺简单、成本低，非常有利于后期规模化制备。 【EN】The invention belongs to the technical field of nano materials, and particularly relates to a preparation method of quantum dots. The preparation method comprises the following steps: providing a group III cation precursor and a ligand, dissolving the group III cation precursor and the ligand in a solvent, and heating under a first temperature condition to obtain a mixed solution; and continuously heating the mixed solution to a second temperature, adding a V-group anion precursor into the mixed solution, and carrying out a nucleation reaction to obtain a III-V-group quantum dot nucleation solution. The preparation method has the advantages of stable technology, simple process and low cost, and is very beneficial to scale preparation in the later period.

摘要：【中文】本发明属于纳米材料技术领域，具体涉及一种量子点及其制备方法。所述制备方法包括如下步骤：提供III族阳离子前驱体和配体，所述III族阳离子前驱体包括一种或多种乙酰丙酮金属盐前驱体以及一种或多种金属氧化物前驱体和/或一种或多种金属氢氧化物前驱体；将所述III族阳离子前驱体和配体溶于溶剂中，在第一温度条件下进行加热处理，得到混合溶液；将所述混合溶液继续升温至第二温度，然后向所述混合溶液中加入V族阴离子前驱体，进行成核反应，得到III‑V族量子点核溶液。所述制备方法不仅技术稳定、工艺简单、成本低，有利于后期规模化制备，而且所制备的量子点不仅显著收窄峰宽，更有利于厚外壳层的生长。 【EN】The invention belongs to the technical field of nano materials, and particularly relates to a quantum dot and a preparation method thereof. The preparation method comprises the following steps: providing a group III cation precursor and a ligand, the group III cation precursor comprising one or more acetylacetone metal salt precursors and one or more metal oxide precursors and/or one or more metal hydroxide precursors; dissolving the III-group cation precursor and the ligand in a solvent, and heating under a first temperature condition to obtain a mixed solution; and continuously heating the mixed solution to a second temperature, adding a V-group anion precursor into the mixed solution, and carrying out a nucleation reaction to obtain a III-V-group quantum dot nucleation solution. The preparation method has the advantages of stable technology, simple process and low cost, and is beneficial to scale preparation in the later period, and the prepared quantum dots not only remarkably narrow the peak width, but also are more beneficial to the growth of a thick outer shell layer.

摘要：【中文】本发明涉及一种量子点及其制备方法。所述制备方法包括如下步骤：提供III族阳离子前驱体和配体，所述III族阳离子前驱体包括一种或多种金属卤化物前驱体、一种或多种乙酰丙酮金属盐前驱体以及一种或多种金属氧化物前驱体和/或一种或多种金属氢氧化物前驱体；将所述III族阳离子前驱体和配体溶于溶剂中，在第一温度条件下进行加热处理，得到混合溶液；将所述混合溶液继续升温至第二温度，然后向所述混合溶液中加入V族阴离子前驱体，进行成核反应，得到III‑V族量子点核溶液。所述制备方法不仅技术稳定、工艺简单、成本低，有利于后期规模化制备，而且所制备的量子点不仅提高了发光效率和显著收窄峰宽，还更有利于厚外壳层的生长。 【EN】The invention relates to a quantum dot and a preparation method thereof. The preparation method comprises the following steps: providing a group III cation precursor and a ligand, the group III cation precursor comprising one or more metal halide precursors, one or more acetylacetone metal salt precursors, and one or more metal oxide precursors and/or one or more metal hydroxide precursors; dissolving the III-group cation precursor and the ligand in a solvent, and heating under a first temperature condition to obtain a mixed solution; and continuously heating the mixed solution to a second temperature, adding a V-group anion precursor into the mixed solution, and carrying out a nucleation reaction to obtain a III-V-group quantum dot nucleation solution. The preparation method has the advantages of stable technology, simple process and low cost, and is beneficial to scale preparation in the later period, and the prepared quantum dots not only improve the luminous efficiency and remarkably narrow the peak width, but also are more beneficial to the growth of a thick shell layer.

摘要：【中文】本发明属于纳米材料领域，具体涉及一种量子点及其制备方法。该量子点包括III‑V族量子点核和包覆在所述III‑V族量子点核表面的乙酰丙酮盐壳层。该量子点通过在III‑V族量子点核的表面引入一层乙酰丙酮盐壳层，可以钝化III‑V族量子点核表面，不仅使量子点更加稳定、尺寸分布变得均匀，而且具有更好的分散性，可显著收窄峰宽，同时非常有利于厚外壳层的生长，以进一步提高量子点的发光效率，对III‑V族量子点的使用和发展具有极为重要的意义。 【EN】The invention belongs to the field of nano materials, and particularly relates to a quantum dot and a preparation method thereof. The quantum dot comprises a III-V group quantum dot core and an acetylacetone salt shell layer coated on the surface of the III-V group quantum dot core. The quantum dot can passivate the surface of the III-V family quantum dot core by introducing a layer of acetylacetone salt shell layer on the surface of the III-V family quantum dot core, so that the quantum dot is more stable, the size distribution becomes uniform, the dispersibility is better, the peak width can be obviously narrowed, and the growth of a thick shell layer is greatly facilitated, so that the luminous efficiency of the quantum dot is further improved, and the quantum dot has very important significance for the use and development of the III-V family quantum dot.

摘要：【中文】本发明属于纳米材料技术领域，具体涉及一种量子点及其制备方法。所述制备方法包括如下步骤：提供III族阳离子前驱体和配体，所述III族阳离子前驱体包括一种或多种乙酰丙酮金属盐前驱体和一种或多种金属卤化物前驱体；将所述III族阳离子前驱体和配体溶于溶剂中，在第一温度条件下进行加热处理，得到混合溶液；将所述混合溶液继续升温至第二温度，然后向所述混合溶液中加入V族阴离子前驱体，进行成核反应，得到III‑V族量子点核溶液。所述制备方法不仅技术稳定、工艺简单、成本低，有利于后期规模化制备，而且所制备的量子点具有更高的发光效率和显著收窄峰宽。 【EN】The invention belongs to the technical field of nano materials, and particularly relates to a quantum dot and a preparation method thereof. The preparation method comprises the following steps: providing a group III cation precursor and a ligand, the group III cation precursor comprising one or more acetylacetone metal salt precursors and one or more metal halide precursors; dissolving the III-group cation precursor and the ligand in a solvent, and heating under a first temperature condition to obtain a mixed solution; and continuously heating the mixed solution to a second temperature, adding a V-group anion precursor into the mixed solution, and carrying out a nucleation reaction to obtain a III-V-group quantum dot nucleation solution. The preparation method has the advantages of stable technology, simple process, low cost and contribution to later-stage large-scale preparation, and the prepared quantum dots have higher luminous efficiency and obviously narrowed peak width.

摘要：【中文】本发明属于纳米材料技术领域，具体涉及一种量子点及其制备方法。该量子点，包括III‑V族量子点核和结合在所述III‑V族量子点核表面的表面配体，所述表面配体的化学结构通式如式I所示：其中R₁和R₂分别独立选自卤素原子、氢原子、羟基、巯基、醚基、硫醚基、醛基、羰基、羧基、硝基、氨基、氰基、异氰基、环氧基、烷氧基、烷基碳酰氧基、烷基氧碳酰基、烷基碳酰基、杂芳基和烃基中的至少一种。该表面配体结合在III‑V族量子点核表面非常有助于壳层的均一生长，从而使量子点尺寸分布变得更加均匀，最终有利于提高量子点的发光效率。 【EN】The invention belongs to the technical field of nano materials, and particularly relates to a quantum dot and a preparation method thereof. The quantum dot comprises a III-V group quantum dot core and a surface ligand combined on the surface of the III-V group quantum dot core, wherein the chemical structure general formula of the surface ligand is shown as formula I: wherein R is₁And R₂Each independently selected from at least one of a halogen atom, a hydrogen atom, a hydroxyl group, a mercapto group, an ether group, a thioether group, an aldehyde group, a carbonyl group, a carboxyl group, a nitro group, an amino group, a cyano group, an isocyano group, an epoxy group, an alkoxy group, an alkylcarbonoxy group, an alkyloxycarbonyl group, an alkylcarbonyl group, a heteroaryl group and a hydrocarbon group. The surface ligand is combined on the surface of the III-V family quantum dot core, which is very helpful for uniform growth of a shell layer, thereby enabling the quantum dot to be divided into sizesThe distribution becomes more uniform, and finally, the luminous efficiency of the quantum dots is improved.

摘要：【中文】本发明属于纳米材料技术领域，具体涉及一种量子点的制备方法。所述制备方法包括如下步骤：提供III族阳离子前驱体和配体，所述III族阳离子前驱体包括一种或多种乙酰丙酮金属盐前驱体；将所述III族阳离子前驱体和配体溶于溶剂中，在第一温度条件下进行加热处理，得到混合溶液；将所述混合溶液继续升温至第二温度，然后向所述混合溶液中加入V族阴离子前驱体，进行成核反应，得到III‑V族量子点核溶液。所述制备方法不仅技术稳定、工艺简单、成本低，有利于后期规模化制备，而且所制备的量子点具有很好的尺寸分散性，可显著收窄峰宽。 【EN】The invention belongs to the technical field of nano materials, and particularly relates to a preparation method of quantum dots. The preparation method comprises the following steps: providing a group III cation precursor and a ligand, the group III cation precursor comprising one or more acetylacetone metal salt precursors; dissolving the III-group cation precursor and the ligand in a solvent, and heating under a first temperature condition to obtain a mixed solution; and continuously heating the mixed solution to a second temperature, adding a V-group anion precursor into the mixed solution, and carrying out a nucleation reaction to obtain a III-V-group quantum dot nucleation solution. The preparation method has the advantages of stable technology, simple process, low cost and contribution to later-stage large-scale preparation, and the prepared quantum dots have good size dispersibility and can obviously narrow the peak width.