摘要：【中文】本发明公开排列电路。根据本发明的一实施例，排列电路包括二极管结构体的源区与接近电子器件的漏极区域串联的多个反馈场效应电子器件，上述二极管结构体与位线及第一字线相连接，上述接近电子器件与源线及第二字线相连接，向上述位线、上述第一字线及上述第二字线选择性施加电压来执行任意接近动作。 【EN】The invention discloses an arrangement circuit. According to an embodiment of the present invention, an arrangement circuit includes a plurality of feedback field effect electronic devices in series with a source region of a diode structure and a drain region of a proximity electronic device, the diode structure is connected to a bit line and a first word line, the proximity electronic device is connected to a source line and a second word line, and a voltage is selectively applied to the bit line, the first word line, and the second word line to perform an arbitrary proximity operation.

摘要：【中文】本发明公开转位反馈场效应电子器件及利用其的排列电路。根据本发明的一实施例，本发明包括二极管结构体、多个栅极及多个接近电子器件，当上述二极管结构体通过上述多个栅极中的第一栅极和上述多个接近电子器件中的第一接近电子器件接收电压时执行第一方向接近，当通过上述多个栅极中的第二栅极和上述多个接近电子器件中的第二接近电子器件接收电压时执行第二方向接近。 【EN】The invention discloses an index feedback field effect electronic device and an arrangement circuit using the same. According to an embodiment of the present invention, the present invention includes a diode structure, a plurality of gates, and a plurality of proximity electronic devices, wherein a first direction proximity is performed when the diode structure receives a voltage through a first gate of the plurality of gates and a first proximity electronic device of the plurality of proximity electronic devices, and a second direction proximity is performed when the diode structure receives a voltage through a second gate of the plurality of gates and a second proximity electronic device of the plurality of proximity electronic devices.

摘要：【中文】本发明公开排列电路。根据本发明的一实施例，排列电路包括反馈场效应电子器件的源极区域和辅助电子器件的漏极区域串联的多个反馈场效应排列器件，反馈场效应电子器件与位线及第一字线相连接，辅助电子器件与源线及第二字线相连接，向第一字线施加在第一栅极电压或第二栅极电压中的一个来存储第一逻辑状态的数据或第二逻辑状态的数据。 【EN】The invention discloses an arrangement circuit. According to an embodiment of the present invention, the permutation circuit includes a plurality of feedback field effect permutation devices in series with a source region of the feedback field effect electronic device and a drain region of the auxiliary electronic device, the feedback field effect electronic device being connected to the bit line and the first word line, the auxiliary electronic device being connected to the source line and the second word line, applying one of the first gate voltage or the second gate voltage to the first word line to store the data of the first logic state or the data of the second logic state.