摘要：【中文】本发明提供一种小间距显示屏及其制作方法，小间距显示屏包括：PCB基板；Mini LED芯片，倒装于PCB基板上；压膜层，覆盖于PCB基板上及Mini LED芯片之间，用于防止Mini LED芯片之间的混光，且压膜层具有部分显露Mini LED芯片的出光窗口；封装层，位于压膜层及Mini LED芯片之上，用于保护Mini LED芯片及压膜层。本发明通过压膜层以及在压膜层中形成不同形状尺寸的出光窗口，可以调节红色Mini LED芯片、绿色Mini LED芯片及蓝色Mini LED的发光强度，使得本发明的小间距显示屏具有更高的色域。 【EN】The invention provides a small-spacing display screen and a manufacturing method thereof, wherein the small-spacing display screen comprises the following components: a PCB substrate; the Mini LED chip is inversely arranged on the PCB substrate; the film pressing layer covers the PCB substrate and between the Mini LED chips and is used for preventing light mixing between the Mini LED chips, and the film pressing layer is provided with a light emitting window partially exposing the Mini LED chips; and the packaging layer is positioned on the laminating layer and the Mini LED chip and is used for protecting the Mini LED chip and the laminating layer. According to the invention, the light emitting windows with different shapes and sizes are formed in the film pressing layer, so that the luminous intensities of the red Mini LED chip, the green Mini LED chip and the blue Mini LED can be adjusted, and the small-distance display screen has a higher color gamut.

摘要：【中文】本发明提供一种小间距显示屏模组及其制作方法，小间距显示屏模组包括：PCB基板；Mini LED芯片，倒装于PCB基板上；填充层，填充于Mini LED芯片之间，用于防止Mini LED芯片之间的混光；封装层，覆盖于填充层及Mini LED芯片之上，用于保护Mini LED芯片及填充层，并为Mini LED芯片提供散光作用。本发明通过底部填充方法制作的小间距显示屏模组，通过底部填充方法在Mini LED芯片间添加掺有碳粉的硅树脂，提供模组所需的墨色背景，使得显示屏具有较高的墨色一致性，同时避免了压膜工序所造成的LED芯片损坏或断路(死灯)现象及其后续的修复难题，具有较高的制造良率。 【EN】The invention provides a small-spacing display screen module and a manufacturing method thereof, wherein the small-spacing display screen module comprises: a PCB substrate; the Mini LED chip is inversely arranged on the PCB substrate; the filling layer is filled between the Mini LED chips and used for preventing light mixing between the Mini LED chips; and the packaging layer is covered on the filling layer and the Mini LED chip, is used for protecting the Mini LED chip and the filling layer and provides a light scattering effect for the Mini LED chip. According to the small-spacing display screen module manufactured by the bottom filling method, the silicone resin doped with carbon powder is added between the Mini LED chips by the bottom filling method, so that the ink color background required by the module is provided, the display screen has high ink color consistency, the LED chip damage or open circuit (dead lamp) phenomenon and the subsequent repair problem caused by the film pressing process are avoided, and the manufacturing yield is high.

摘要：【中文】本发明提供一种共阴极LED芯片及其制作方法，芯片包括p型半导体层、发光层、n型半导体层、凹槽、连接层、透明导电层、量子点层及保护层，凹槽贯穿n型半导体层、发光层及p型半导体层，以隔离出多个LED单元，连接层横跨于凹槽上，其两端分别与相邻两LED单元的n型半导体层接触，实现相邻的LED单元的阴极共连。本发明的LED芯片，采用共阴极设计，可将多个LED芯片整合为一个整体，转移量为传统方法的三分之一以下，且芯片尺寸较单颗芯片大，转移难度相对较低，可解决现有Micro LED转移难度大、转移次数多、较低转移良率和相邻LED间颜色窜扰的问题。 【EN】The invention provides a common cathode LED chip and a manufacturing method thereof, wherein the chip comprises a p-type semiconductor layer, a luminous layer, an n-type semiconductor layer, a groove, a connecting layer, a transparent conducting layer, a quantum dot layer and a protective layer, the groove penetrates through the n-type semiconductor layer, the luminous layer and the p-type semiconductor layer to isolate a plurality of LED units, the connecting layer stretches across the groove, and two ends of the connecting layer are respectively contacted with the n-type semiconductor layers of two adjacent LED units to realize the common connection of cathodes of the two adjacent LED units. The LED chip provided by the invention adopts a common cathode design, a plurality of LED chips can be integrated into a whole, the transfer amount is less than one third of that of the traditional method, the size of the chip is larger than that of a single chip, the transfer difficulty is relatively low, and the problems of high transfer difficulty, high transfer frequency, low transfer yield and color crosstalk between adjacent LEDs of the conventional Micro LED can be solved.

摘要：【中文】本发明提供一种LED芯片及其制作方法，LED芯片包括：衬底；限光层，位于衬底背面，限光层具有出光窗口；发光外延结构，位于衬底正面上，至少包括N型半导体层、发光层及P型半导体层，发光外延结构具有贯穿至N型半导体层表面的电极台阶；电流扩展层，位于P型半导体层上；反射层，覆盖于电极台阶以及发光外延结构的正面与侧面；N电极，穿过电极台阶处的反射层与N型半导体层接触；P电极，穿过反射层与电流扩展层接触。本发明可有效减小LED芯片的出光角度，大大减轻由该LED芯片所制成的LED显示屏在大偏角观看视角下的偏色以及像素间颜色串扰问题。 【EN】The invention provides an LED chip and a manufacturing method thereof, wherein the LED chip comprises: a substrate; the light limiting layer is positioned on the back surface of the substrate and is provided with a light outlet window; the light-emitting epitaxial structure is positioned on the front surface of the substrate and at least comprises an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer, and the light-emitting epitaxial structure is provided with an electrode step penetrating to the surface of the N-type semiconductor layer; the current expansion layer is positioned on the P-type semiconductor layer; the reflecting layer covers the electrode steps and the front and the side of the light-emitting epitaxial structure; the N electrode passes through the reflecting layer at the electrode step and is in contact with the N-type semiconductor layer; and a P electrode contacting the current spreading layer through the reflective layer. The invention can effectively reduce the light-emitting angle of the LED chip, and greatly reduce the problems of color cast and color crosstalk among pixels of an LED display screen made of the LED chip under a large deflection angle viewing angle.

摘要：【中文】本发明提供一种具有LED测试点的LED晶圆及转移方法，所述LED晶圆包括多个LED单元以及至少一个LED测试点，所述LED测试点与所述LED单元具有相同结构，且所述LED测试点的尺寸大于所述LED单元，所述LED测试点用于进行LED电性测量，获得所述LED测试点的电性参数，以表征所述LED单元的电性参数。本发明通过在LED晶圆设置与常规LED单元结构相同，且尺寸较大的LED测试点，利用LED测试点的电性参数来表征常规LED单元的电性参数，从而实现细小LED芯片，如Micro LED的电性测量，在无需分选的情况下保证芯片波长的一致性，从而有效提升芯片的利用率。 【EN】The invention provides an LED wafer with LED test points and a transfer method, wherein the LED wafer comprises a plurality of LED units and at least one LED test point, the LED test points and the LED units have the same structure, the size of each LED test point is larger than that of each LED unit, and the LED test points are used for conducting LED electrical property measurement to obtain electrical property parameters of the LED test points so as to represent the electrical property parameters of the LED units. According to the invention, the LED test points with the same structure as the conventional LED unit and larger size are arranged on the LED wafer, and the electrical parameters of the conventional LED unit are represented by the electrical parameters of the LED test points, so that the electrical measurement of a tiny LED chip, such as a Micro LED, is realized, the wavelength consistency of the chip is ensured without sorting, and the utilization rate of the chip is effectively improved.